Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

Far infrared photoconductivity in a silicon based material: vanadium supersaturated silicon

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) and titanium (Ti) at different doses and subsequently processed by pulsed-laser melting.

Light-generated nuclear quantum beats: a signature of photosynthesis.

Light-induced radical pairs in deuterated and deuterated plus 15N-substituted Synechococcus lividus cyanobacteria have been studied by transient EPR following pulsed laser excitation. Nuclear quantum beats are observed in the transverse electron magnetization at lower temperatures. Model calculations for the time profiles, evaluated at the high-field emissive maximum of the spectrum, indicate assignment of these coherences to nitrogen nuclei in the primary donor. Thorough investigation of the nuclear modulation patterns can provide detailed information on the electronic structure of the primary donor, providing insight into the mechanism of the primary events of plant photosynthesis.

Colocalization of calcium entry and exocytotic release sites in adrenal chromaffin cells.

"Snapshot" images of localized Ca2+ influx into patch-clamped chromaffin cells were captured by using a recently developed pulsed-laser imaging system. Transient opening of voltage-sensitive Ca2+ channels gave rise to localized elevations of Ca2+ that had the appearance of either "hotspots" or partial rings found immediately beneath the plasma membrane. When the Ca2+ imaging technique was employed in conjunction with flame-etched carbon-fiber electrodes to spatially map the release sites of catecholamines, it was observed that the sites of Ca2+ entry and catecholamine release were colocalized. These results provide functional support for the idea that secretion occurs from "active zone"-like structures in neuroendocrine cells.

Accessing chain length dependent termination rate coefficients of methyl methacrylate (MMA) via the reversible addition fragmentation chain transfer (RAFT) process

The RAFT-CLD-T methodology is demonstrated to be not only applicable to 1-substituted monomers such as styrene and acrylates, but also to 1,1-disubstituted monomers such as MMA. The chain length of the terminating macromolecules is controlled by CPDB in MMA bulk free radical polymerization at 80 degrees C. The evolution of the chain length dependent termination rate coefficient, k(t)(i,i), was constructed in a step-wise fashion, since the MMA/CPDB system displays hybrid behavior (between conventional and living free radical polymerization) resulting in initial high molecular weight polymers formed at low RAFT agent concentrations. The obtained CLD of k(t) in MMA polymerizations is compatible with the composite model for chain length dependent termination. For the initial chain-length regime, up to a degree of polymerization of 100, k(t) decreases with alpha (in the expression k(t)(i,i) = k(t)(0) . i(-alpha)) being close to 0.65 at 80 degrees C. At chain lengths exceeding 100, the decrease is less pronounced (affording an alpha of 0.15 at 80 degrees C). However, the data are best represented by a continuously decreasing nonlinear functionality implying a chain length dependent alpha.

22km distributed strain sensor using Brillouin loss in an optical fibre

A novel distributed strain sensor is presented utilizing the strain dependence of the frequency at which the Brillouin loss is maximized in the interaction between a cw laser and a pulsed laser. A strain resolution of 20 µ with a spatial resolution of 5 m has been achieved with a 22 km sensing length.

Combined distributed temperature and strain sensor based on Brillouin loss in an optical fiber

We present a novel distributed sensor that utilizes the temperature and strain dependence of the frequency at which the Brillouin loss is maximized in the interaction between a cw laser and a pulsed laser. With a 22-km sensing length, a strain resolution of 20 µ? and a temperature resolution of 2°C have been achieved with a spatial resolution of 5 m.

32 km distributed temperature sensor based on Brillouin loss in an optical fibre

We present a novel distributed temperature sensor that uses the temperature dependence of the frequency at which the loss is maximized in the interaction between a cw laser and a pulsed laser. With a 32-km sensing length, a temperature resolution of 1°C has been achieved; it is also shown that a spatial resolution of 5 m may be obtained.

32 km distributed temperature sensor based on Brillouin loss in an optical fibre

We present a novel distributed temperature sensor that uses the temperature dependence of the frequency at which the loss is maximized in the interaction between a cw laser and a pulsed laser. With a 32-km sensing length, a temperature resolution of 1°C has been achieved; it is also shown that a spatial resolution of 5 m may be obtained.

22km distributed strain sensor using Brillouin loss in an optical fibre

A novel distributed strain sensor is presented utilizing the strain dependence of the frequency at which the Brillouin loss is maximized in the interaction between a cw laser and a pulsed laser. A strain resolution of 20 µ with a spatial resolution of 5 m has been achieved with a 22 km sensing length.

Combined distributed temperature and strain sensor based on Brillouin loss in an optical fiber

We present a novel distributed sensor that utilizes the temperature and strain dependence of the frequency at which the Brillouin loss is maximized in the interaction between a cw laser and a pulsed laser. With a 22-km sensing length, a strain resolution of 20 µ? and a temperature resolution of 2°C have been achieved with a spatial resolution of 5 m.

Mode-locking intracavity dynamics:modeling nonlinear power and energy fluctuations

Modern high-power, pulsed lasers are driven by strong intracavity fluctuations. Critical in driving the intracavity dynamics is the nontrivial phase profiles generated and their periodic modification from either nonlinear mode-coupling, spectral filtering or dispersion management. Understanding the theoretical origins of the intracavity fluctuations helps guide the design, optimization and construction of efficient, high-power and high-energy pulsed laser cavities. Three specific mode-locking component are presented for enhancing laser energy: waveguide arrays, spectral filtering and dispersion management. Each component drives a strong intracavity dynamics that is captured through various modeling and analytic techniques.