Multimode interference 3-dB coupler in silicon-on-insulator based on silicon rib waveguides with trapezoidal cross section

A 3-dB multimode interference optical coupler based on rib waveguides with trapezoidal cross section was designed and fabricated on silicon-on-insulator wafer. Potassium hydroxide (KOH) anisotropic chemical etching of silicon was used to fabricate the waveguides to obtain smooth interface. A modified finite-difference beam propagation method was used to simulate the multimode rib waveguide with slope interfaces. The rms roughness of etching interface is as small as 1.49 nm. The propagation loss of the waveguide is 1.3 dB/cm at wavelength of 1.55 mum. The fabricated 3-dB coupler has a good uniformity of 0.2 dB.

Fabrication of 4 x 4 tapered MMI coupler with large cross section

MMI coupler with large cross section has low coupling loss between the device and fiber. However, large chip area is required. Recently proposed N x N tapered MMI coupler shows a substantial reduction in device geometry. No such kind of devices with N > 2 has yet been realized up to now. The authors have demonstrated a 4 x 4 parabolically tapered MMI coupler with large cross section that can match the SM fiber in silicon-on-insulator (SOI) technology. The device exhibits a minimum uniformity of 0.36 dB and excess loss of 3.7 dB, It represents a key component for realization of MMI-based silicon integrated optical circuit technology.

Nd3+-doped LaF3 nanoparticles with a larger emission cross-section

A series of Nd3+-doped LaF3 nanoparticles with Nd3+ concentrations from 0.5 to 10 mol% were synthesized. The fluorescence intensity and lifetime of the nanoparticles at various Nd3+ doping concentration were investigated. The nanoparticles displayed strongest fluorescence intensity at 3 mol% Nd3+ concentration. Eighty-eight percentage quantum efficiency was obtained when the Nd3+ concentration was 0.5 mol%. Optical properties of nanoparticles were studied according to Judd-Ofelt theory. A larger emission cross-section, sigma(em), for F-4(3/2) -> I-4(11/2) transition of the Nd3+ ion was obtained as 3.21 x 10(-20) cm(2), which was two times of the currently reported value. The larger emission cross-section and strong fluorescence intensity demonstrate that these nanoparticles are promising materials for laser applications. (C) 2010 Published by Elsevier B. V.