Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors

This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.

Use of mirage effect for the detection of phase transitions in solids

The phenomenon of mirage effect suffered by a He-Ne laser beam has been utilized to detect phase transitions in solids. It has been observed that anomalous fluctuations of large amplitude occur in the signal level near the transition temperature. The mean square value of the fluctuation is found to exhibit a well-defined peak at this point. Results of measurements made in the case of crystals of TGS ((NH2CH2COOH)3.H2SO4) and a ceramic sample (BaTiO3) are given to illustrate this technique.

Amorphous Selenium films using CBD: A Novel Selenisation technique for preparing lndium Selenide and Copper lndium Selenide Thin Films

In the present work, we describe our efforts to develop device quality CuInSe2, films through low cost, simple and eco-friendly hybrid techniques. The most important point to be highlighted here is that the method fully avoids the use of poisonous gases such as H2Se/Se vapour. Instead, selenisation is achieved through solid state reaction between amorphous selenium and polycrystalline metal layers resulting in both binary and ternary selenides. Thin films of amorphous selenium (a-Se) used for this is deposited using Chemical Bath Deposition (CBD). CulnSe2 films are prepared through the selenisation process. Another PV material, indium selenide (In2Se3) thin films are also prepared using this process.

Electrical switching studies on the thin films of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon

This thesis Entitled Electrical switching studies on the thin flims of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon.A general introduction to the switching and allied phenomena is presented. Subsequently, developments of switching in thin films are described. The Mott transition is qualitatively presented. The working of a switching transitor is outlined and compared to the switching observed in thin films. Characteristic parameters of switching such as threshold voltage, time response to a, voltage pulse, and delay time are described. The various switching configurations commonly used are discussed. The mechanisms used to explain the switching behaviour like thermal, electrothermal and purely electronic are reviewed. Finally the scope, feasibility and the importance of polymer thin films in switching are highlighted.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

Evidence of extended orientational order in amorphous Fe/Sm thin films

Amorphous thin films of Fe/Sm, prepared by evaporation methods, have been magnetically characterized and the results were interpreted in terms of the random magnets theory. The samples behave as 2D and 3D random magnets depending on the total thickness of the film. From our data the existence of orientational order, which greatly influences the magnetic behavior of the films, is also clear.

Calorimetry of hydrogen desorption from a-Si nanoparticles

The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.

Photoacoustic investigation of the optical and thermal properties of selected amorphous chalcogenide semiconductors

This thesis work has mainly concentrated on the investigation of the ,optical and thermal properties of binary semiconducting chalcogenide glasses belonging to the AivB¥5x and AZBXEX families. The technique used for these studies is a relatively new one namely, the photoacoustic (PA) technique. This technique is based on the detection of acoustic signal produced in an enclosed volume when the sample is irradiated by an intensity modulated radiation. The signal produced depends upon the optical properties of the sample, and the thermal properties of the sample, backing material and the surrounding gas. For the present studies an efficient signal beam gas-microphone PA spectrometer, consisting of a high power Xenon lamp, monochromator, light beam chopper, PA cell with microphone and lock-in amplifier, has been set up. Two PA cells have been fabricated: one for room temperature measurements and another for measurements at high temperatures. With the high temperature PA cell measurements can be taken upto 250°C. Provisions are incorporated. in both the cells to change the volume and to use different backing materials for the sample. The cells have been calibrated by measuring the frequency response of the cells using carbon black as the sample

Local character of magnetic coupling in ionic solids

Magnetic interactions in ionic solids are studied using parameter-free methods designed to provide accurate energy differences associated with quantum states defining the Heisenberg constant J. For a series of ionic solids including KNiF3, K2NiF4, KCuF3, K2CuF4, and high- Tc parent compound La2CuO4, the J experimental value is quantitatively reproduced. This result has fundamental implications because J values have been calculated from a finite cluster model whereas experiments refer to infinite solids. The present study permits us to firmly establish that in these wide-gap insulators, J is determined from strongly local electronic interactions involving two magnetic centers only thus providing an ab initio support to commonly used model Hamiltonians.

Swift heavy ion induced surface modification for tailoring coercivity in Fe–Ni based amorphous thin films

Fe–Ni based amorphous thin films were prepared by thermal evaporation. These films were irradiated by 108 MeV Ag8+ ions at room temperature with fluences ranging from 1 1012 to 3 1013 ions/cm2 using a 15 UD Pelletron accelerator. Glancing angle x-ray diffraction studies showed that the irradiated films retain their amorphous nature. The topographical evolution of the films under swift heavy ion SHI bombardment was probed using atomic force microscope and it was noticed that surface roughening was taking place with ion beam irradiation. Magnetic measurements using a vibrating sample magnetometer showed that the coercivity of the films increases with an increase in the ion fluence. The observed coercivity changes are correlated with topographical evolution of the films under SHI irradiation. The ability to modify the magnetic properties via SHI irradiation could be utilized for applications in thin film magnetism

Covalently Interconnected Three- Dimensional Graphene Oxide Solids

The creation of three-dimensionally engineered nanoporous architectures via covalently interconnected nanoscale building blocks remains one of the fundamental challenges in nanotechnology. Here we report the synthesis of ordered, stacked macroscopic three-dimensional (3D) solid scaffolds of graphene oxide (GO) fabricated via chemical cross-linking of two-dimensional GO building blocks. The resulting 3D GO network solids form highly porous interconnected structures, and the controlled reduction of these structures leads to formation of 3D conductive graphene scaffolds. These 3D architectures show promise for potential applications such as gas storage; CO2 gas adsorption measurements carried out under ambient conditions show high sorption capacity, demonstrating the possibility of creating new functional carbon solids starting with two-dimensional carbon layers

Surface evolution of amorphous nanocolumns of Fe–Ni grown by oblique angle deposition

The growth of Fe–Ni based amorphous nanocolumns has been studied using atomic force microscopy. The root mean square roughness of the film surface increased with the deposition time but showed a little change at higher deposition time. It was found that the separation between the nanostructures increased sharply during the initial stages of growth and the change was less pronounced at higher deposition time. During the initial stages of the column growth, a roughening process due to self shadowing is dominant and, as the deposition time increases, a smoothening mechanism takes place due to the surface diffusion of adatoms

Influence of substrate topography on the growth and magnetic properties of obliquely deposited amorphous nanocolumns of Fe–Ni

We investigated the influence of substrate surface roughness on the structural and magnetic properties of obliquely deposited amorphous nanocolumns of Fe–Ni. Experiments showed that the surface roughness of the substrate greatly determines the morphology of the columnar structures and this in turn has a profound influence on the magnetic properties. Nucleation of Fe–Ni nanocolumns on a smooth silicon substrate was at random, while that on a rough glass substrate was defined by the irregularities on the substrate surface. It has been found that magnetic interaction between the nanocolumns prepared on a silicon substrate was due to their small inter-column separation. Well separated nanocolumns on a glass substrate resulted in exchange isolated magnetic domains. The size, shape and the distribution of nanocolumns can be tailored by appropriately choosing the surface roughness of the substrate. This will find potential applications in thin film magnetism.

Exchange bias effect in partially oxidized amorphous Fe–Ni–B based metallic glass nanostructures

The magnetic properties of amorphous Fe–Ni–B based metallic glass nanostructures were investigated. The nanostructures underwent a spin-glass transition at temperatures below 100 K and revealed an irreversible temperature following the linear de Almeida–Thouless dependence. When the nanostructures were cooled below 25 K in a magnetic field, they exhibited an exchange bias effect with enhanced coercivity. The observed onset of exchange bias is associated with the coexistence of the spin-glass phase along with the appearance of another spin-glass phase formed by oxidation of the structurally disordered surface layer, displaying a distinct training effect and cooling field dependence. The latter showed a maximum in exchange bias field and coercivity, which is probably due to competing multiple equivalent spin configurations at the boundary between the two spin-glass phases

Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag7+ ion irradiation

We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co77Fe23 thin films on silicon substrates using 100 MeV Ag7+ ions fluences of 1 1011 ions/ cm2, 1 1012 ions/cm2, 1 1013 ions/cm2, and 3 1013 ions/cm2. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated