937 resultados para Tunable luminescence
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Infrared-to-visible and infrared-to-infrared frequency upconversion processes in Yb3+-Tm3+ doped PbO-GeO2 glasses containing silver nanoparticles (NPs) were investigated. The experiments were performed by exciting the samples with a diode laser operating at 980 nm (in resonance with the Yb3+ transition F-2(7/2)-> F-2(5/2)) and observing the photoluminescence (PL) in the visible and infrared regions due to energy transfer from Yb3+ to Tm3+ ions followed by excited state absorption in the Tm3+ ions. The intensified local field in the vicinity of the metallic NPs contributes for enhancement in the PL intensity at 480 nm (Tm3+ :(1)G(4)-> H-3(6)) and at 800 nm (Tm3+ : H-3(4) -> H-3(6)). (C) 2009 American Institute of Physics. [doi:10.1063/1.3211300]
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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The luminescence properties of solid hydrated lanthanide squarates (Ln2(C4O4)3(H2O) x; x = 8 or 13;Ln3+ = Gd, La, Eu, Tb, Pr) are reported for temperatures down to 4.2K. The luminescence of the squarate group is observed for the Gd3+ and La3+ compounds at low temperatures (below 150K). The Pr3+ compound does not show any emission at all, not even at 4.2K. This is ascribed to the quenching of the Pr3+ emission by multiphonon relaxation and/or concentration quenching. The quantum efficiencies of the 5D0 emission of Eu3+ and of the 5D4 emission of Tb3+ in these squarate complexes are strikingly different. Whereas the Tb3+ emission shows a temperature independent quantum efficiency of 50% upon ligand excitation, the Eu3+ emission is strongly quenched, showing a temperature dependent quantum efficiency of 0.8% at 4.2K upon ligand excitation. This quenching is ascribed to the low energy position of the charge-transfer state of Eu3+ in these compounds.
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During a study of the LaF3-ZrF4 system, both La3Zr4F25 and α-LaZr3F15 compounds have been evidenced. Their crystal structures have been determined from single-crystal X-ray diffraction data. La3Zr4F25 crystallises in the cubic system with a = 12.384 Å and 143d space group (no. 220). Its crystal structure is built up of (ZrF6)2- octahedra and (LaF8)5- dodecahedra sharing corners. The low temperature form, α, of LaZr3F15 is orthorhombic (space group Pmmn, no. 59) with a = 15.721 Å, b = 16.299 Å, c = 8.438 Å. Its structure is built of corner-sharing tricaped trigonal prisms surrounding the La3+ ions and both octahedra and monocapped trigonal prisms encompassing the Zr4+ ions. This structure is characterised by dynamically disordered (ZrF6)2- complex anions. The Eu3+ luminescence properties of these phases have been investigated and are discussed in relationship with their crystal structures.
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Good optical quality Eu3+-doped silica-polyethyleneglycol hybrids were prepared by the sol-gel process. Thermomechanical analysis showed an increase of the glass transition temperature, due to the stiffness of the polymeric network, as the amount of Eu3+ increased. Europium luminescent properties were used to study structural evolution during the sol-gel transition. For lower doping concentrations dried gels present statistical distributions of Eu3+, typical of an amorphous environment, while for higher concentrations a crystalline-like environment of Eu3+ was observed. A broad emission band was observed in the visible part of the electromagnetic spectrum and assigned to the intrinsic emission from the hybrid polymeric network.
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A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.
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A low-voltage, low-power OTA-C sinusoidal oscillator based on a triode-MOSFET transconductor is here discussed. The classical quadrature model is employed and the transconductor inherent nonlinear characteristic with input voltage is used as the amplitude-stabilization element. An external bias VTUNE linearly adjusts the oscillation frequency. According to a standard 0.8μm CMOS n-well process, a prototype was integrated, with an effective area of 0.28mm2. Experimental data validate the theoretical analysis. For a single 1.8V-supply and 100mV≤VTUNE≤250mV, the oscillation frequency fo ranges from 0.50MHz to 1.125MHz, with a nearly constant gain KVCO=4.16KHz/mV. Maximum output amplitude is 374mVpp @1.12MHz. THD is -41dB @321mVpp. Maximum average consumption is 355μW.