Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source

Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

An improved sapce phasor based current hysteresis controller with reduced switching frequency variations using variable parabolic bands

A current error space phasor based simple hysteresis controller is proposed in this paper to control the switching frequency variation in two-level pulsewidth-modulation (PWM) inverter-fed induction motor (IM) drives. A parabolic boundary for the current error space phasor is suggested for the first time to obtain the switching frequency spectrum for output voltage with hysteresis controller similar to the constant switching frequency voltage-controlled space vector PWM-based IM drive. A novel concept of online variation of this parabolic boundary, which depends on the operating speed of motor, is presented. A generalized technique that determines the set of unique parabolic boundaries for a two-level inverter feeding any given induction motor is described. The sector change logic is self-adaptive and is capable of taking the drive up to the six-step mode if needed. Steady-state and transient performance of proposed controller is experimentally verified on a 3.7-kW IM drive in the entire speed range. Close resemblance of the simulation and experimental results is shown.

Novel Switching Sequences for a Space-Vector-Modulated Three-Level Inverter

A three-level inverter produces six active vectors, each of normalized magnitudes 1, 0.866, and 0.5, besides a zero vector. The vectors of relative length 0.5 are termed pivot vectors.The three nearest voltage vectors are usually used to synthesize the reference vector. In most continuous pulsewidth-modulation(PWM) schemes, the switching sequence begins from a pivot vector and ends with the same pivot vector. Thus, the pivot vector is applied twice in a subcycle or half-carrier cycle. This paper proposes and investigates alternative switching sequences, which use the pivot vector only once but employ one of the other two vectors twice within the subcycle. The total harmonic distortion(THD) in the fundamental line current pertaining to these novel sequences is studied theoretically as well as experimentally over the whole range of modulation. Compared with centered space vector PWM, two of the proposed sequences lead to reduced THD at high modulation indices at a given average switching frequency.

Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric PbZrO3 thin films

Antiferroelectric materials (example: lead zirconate and modified lead zirconate stannate), in which a field-induced ferroelectric phase transition is feasible due to a small free energy difference between the ferroelectric and the antiferroelectric phases, are proven to be very good candidates for applications involving actuation and high charge storage devices. The property of reverse switching from the field-induced ferroelectric to antiferroelectric phases is studied as a function of temperature, applied electric field, and sample thickness in antiferroelectric lead zirconate thin films deposited by pulsed excimer laser ablation. The maximum released charge density was 22 μC/cm2 from a stored charge density of 36 μC/cm2 in a 0.55 μ thick lead zirconate thin film. This indicated that more than 60% of the stored charge could be released in less than 7 ns at room temperature for a field of 200 kV/cm. The content of net released charge was found to increase with increasing field strength, whereas with increasing temperature the released charge was found to decrease. Thickness-dependent studies on lead zirconate thin films showed that size effects relating to extrinsic and intrinsic pinning mechanisms controlled the released and induced charges through the intrinsic switching time. These results proved that antiferroelectric PZ thin films could be utilized in high-speed charge decoupling capacitors in microelectronics applications.

High voltage DC power supply topology for pulsed load applications with converter switching synchronized to load pulses

High voltage power supplies for radar applications are investigated, which are subjected to pulsed load (125 kHz and 10% duty cycle) with stringent specifications (<0.01% regulation, efficiency>85%, droop<0.5 V/micro-sec.). As good regulation and stable operation requires the converter to be switched at much higher frequency than the pulse load frequency, transformer poses serious problems of insulation failure and higher losses. This paper proposes a methodology to tackle the problems associated with this type of application. Synchronization of converter switching with load pulses enables the converter to switch at half the load switching frequency. Low switching frequency helps in ensuring safety of HV transformer insulation and reduction of losses due to skin and proximity effect. Phase-modulated series resonant converter with ZVS is used as the power converter.

Thermodynamic, kinetic and electrical switching studies on Si(15)Te(85-x)In(x) glasses: Observation of Boolchand intermediate phase

An interesting topic for quite some time is an intermediate phase observed in chalcogenide glasses, which is related to network connectivity and rigidity. This phenomenon is exhibited by Si-Te-In glasses also. It has been addressed here by carrying out detailed thermal investigations by using Alternating Differential Scanning Calorimetry technique. An effort has also been made to determine the stability of these glasses using the data obtained from different thermodynamic quantities and crystallization kinetics of these glasses. Electrical switching behavior by recording I-V characteristics and variation of switching voltages with indium composition have been studied in these glasses for phase change memory applications. (C) 2011 Elsevier Inc. All rights reserved.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Colossal electroresistance and current induced switching in ferromagnetic insulating state of La0.82Ca0.18MnO3

Colossal electroresistance and current induced resistivity switching have been measured in the ferromagnetic insulating (FMI) state of single crystal manganite La0.82Ca0.18MnO3. The sample has a Curie transition temperature TC = 165 K and the FMI state is realized for temperatures T<100 K. The electroresistance (ER), arising from a strong nonlinear resistivity, attains a large value ( ≈ 100%) in the FMI state. However, this is accompanied by a collapse of the magnetoresistance (MR) to a small value even in magnetic field (H) of 10 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled.

Switching Transients in Single-Phase Induction Motors

The subject of transients in polyphase induction motors and synchronous machines has been studied in very great detail by several investigators, but no published literature exists dealing exclusively with the analysis of the problem of transients in single-phase induction motors. This particular problem has been studied in this paper by applying the Laplace transform. The results of actual computation of the currents and developed electrical torque are compared with the data obtained by setting up the integro-differential equations of the machine on an electronic differential analyzer. It is shown that if the motor is switched on to the supply when the potential passes through its zero value, there is a pulsating fundamental frequency torque superimposed on the average steady-state unidirectional torque. If, on the other hand, the switch is closed when the applied potential passes through its maximum value, the developed electrical torque settles down to its final steady-state value during the first cycle of the supply voltage.

New approach to distance relays with quadrilateral polar characteristic for e.h.v.-line protection

A new technique is presented using principles of multisignal relaying for the synthesis of a universal-type quadrilateral polar characteristic. The modus operandi consists in the determination of the phase sequence of a set of voltage phasors and the provision of a trip signal for one sequence while blocking for the other. Two versions, one using ferrite-core logic and another using transistor logic, are described in detail. The former version has the merit of simplicity and has the added advantage of not requiring any d.c. supply. The unit is flexible, as it permits independent control of the characteristic along the resistance and reactance axis through suitable adjustments of replica impedance angles. The maximum operating time is about 20ms for all switching angles, and with faults within 95% of the protected section. The maximum transient overreach is about 8%.