TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON.

Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE

Influence of a building's integrated-photovoltaics on heating and cooling loads

Building integrated photovoltaics (BIPV) has the potential to become a major source of renewable energy in the urban environment. BIPV has significant influence on the heat transfer through the building envelope because of the change of the thermal resistance by adding or replacing the building elements. Four different roofs are used to assess the impacts of BIPV on the building's heating-and-cooling loads; namely ventilated air-gap BIPV, non-ventilated (closed) air-gap BIPV, closeroof mounted BIPV, and the conventional roof with no PV and no air gap. One-dimensional transient models of four cases are derived to evaluate the PV performances and building cooling-and-heating loads across the different roofs in order to select the appropriate PV building integration method in Tianjin, China. The simulation results show that the PV roof with ventilated air-gap is suitable for the application in summer because this integration leads to the low cooling load and high PV conversion efficiency. The PV roof with ventilation air-gap has a high time lag and small decrement factor in comparison with other three roofs and has the same heat gain as the cool roof of absorptance 0.4. In winter, BIPV of non-ventilated air gap is more appropriate due to the combination of the low heating-load through the PV roof and high PV electrical output. © 2005 Elsevier Ltd. All rights reserved.

Effect of laser heating temperature on coating characteristics of Stellite 6 deposited by cold spray

Laser-assisted cold spray (LCS) is a new coating and fabrication process which combines some advantages of CS: solid-state deposition, retain their initial composition and high build rate with the ability to deposit materials which are either difficult or impossible to deposit using cold spray alone. Stellite 6 powder is deposited on medium carbon steels by LCS using N 2 as carrier gas pressure. The topography, cross section thickness, structure of the coatings is examined by SEM, optical microscopy, EDX. The results show that thickness and fluctuation of coating are improved with increased deposition site temperature. Porosity of coating is affected by N 2 and deposition site temperature. In this paper, it presents optimal coating using N 2 at a pressure of 3 MPa and temperature of 450°C and deposition site temperature of 1100°C.

Increased gas production from hydrates by combining depressurization with heating of the wellbore

To extract gas from hydrate reservoirs, it has to be dissociated in situ. This endothermic dissociation process absorbs heat energy from the formation and pore fluid. The heat transfer governs the dissociation rate, which is proportional to the difference between the actual temperature and the equilibrium temperature. This study compares three potential gas production schemes from hydrate-bearing soil, where the radial heat transfer is governing. Cylindrical samples with 40% pore-filling hydrate saturation were tested. The production tests were carried out over 90 min by dissociating the hydrate from a centered miniature wellbore, by either lowering the pressure to 6, 4, or 6 MPa with simultaneous heating of the wellbore to 288 K. All tests were replicated by a numerical simulation. With additional heating at the same wellbore pressure, the gas production from hydrates could, on average, be increased by 1.8 and 3.6 times in the simulation and experiments, respectively. If the heat influx from the outer boundary is limited, a simulation showed that the specific heat of the formation is rapidly used up when the wellbore is only depressurized and not heated. © 2012 American Chemical Society.

Study by Hall probe mapping of the trapped flux modification produced by local heating in YBCO HTS bulks for different surface/volume ratios

The aim of this report is to compare the trapped field distribution under a local heating created at the sample edge for different sample morphologies. Hall probe mappings of the magnetic induction trapped in YBCO bulk samples maintained out of thermal equilibrium were performed on YBCO bulk single domains, YBCO single domains with regularly spaced hole arrays, and YBCO superconducting foams. The capability of heat draining was quantified by two criteria: the average induction decay and the size of the thermally affected zone caused by a local heating of the sample. Among the three investigated sample shapes, the drilled single domain displays a trapped induction which is weakly affected by the local heating while displaying a high trapped field. Finally, a simple numerical modelling of the heat flux spreading into a drilled sample is used to suggest some design rules about the hole configuration and their size. © 2005 IOP Publishing Ltd.

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.

We have investigated the dynamics of hot charge carriers in InP nanowire ensembles containing a range of densities of zinc-blende inclusions along the otherwise wurtzite nanowires. From time-dependent photoluminescence spectra, we extract the temperature of the charge carriers as a function of time after nonresonant excitation. We find that charge-carrier temperature initially decreases rapidly with time in accordance with efficient heat transfer to lattice vibrations. However, cooling rates are subsequently slowed and are significantly lower for nanowires containing a higher density of stacking faults. We conclude that the transfer of charges across the type II interface is followed by release of additional energy to the lattice, which raises the phonon bath temperature above equilibrium and impedes the carrier cooling occurring through interaction with such phonons. These results demonstrate that type II heterointerfaces in semiconductor nanowires can sustain a hot charge-carrier distribution over an extended time period. In photovoltaic applications, such heterointerfaces may hence both reduce recombination rates and limit energy losses by allowing hot-carrier harvesting.

Determining of the delay time for a heating ventilating and air-conditioning plant using two weighted neural network approach

This paper presents an two weighted neural network approach to determine the delay time for a heating, ventilating and air-conditioning (HVAC) plan to respond to control actions. The two weighted neural network is a fully connected four-layer network. An acceleration technique was used to improve the General Delta Rule for the learning process. Experimental data for heating and cooling modes were used with both the two weighted neural network and a traditional mathematical method to determine the delay time. The results show that two weighted neural networks can be used effectively determining the delay time for AVAC systems.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.