999 resultados para Silicon Bridge
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The crystal structure of the cyclic peptide disulfide Boc-Cys-Pro-Aib-Cys-NHMe has been determined by X-ray diffraction. The peptide crystallizes in the space group P212121, with A = 8.646(1), B = 18.462(2), C = 19.678(3)Å and Z = 4. The molecules adopt a highly folded compact conformation, stabilized by two intramolecular 4→ 1 hydrogen bonds between the Cys (1) and Pro (2) CO groups and the Cys (4) and methylamide NH groups, respectively. The backbone conformational angles for the peptide lie very close to those expected for a 310 helix. The S-S bridge adopts a right handed twist with a dihedral angle of 82°. The structure illustrates the role of stereochemically constrained residues, in generating novel peptide conformations. Aib, α-aminoisobutyric acid; Z, benzyloxycarbonyl; Boc, t-butyloxycarbonyl; OMe, methyl ester; OBz, benzyl ester; NHMe, N-methylamide; Tosyl, p-toluenesulfonyl.
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A new two-stage state feedback control design approach has been developed to monitor the voltage supplied to magnetorheological (MR) dampers for semi-active vibration control of the benchmark highway bridge. The first stage contains a primary controller, which provides the force required to obtain a desired closed-loop response of the system. In the second stage, an optimal dynamic inversion (ODI) approach has been developed to obtain the amount of voltage to be supplied to each of the MR dampers such that it provides the required force prescribed by the primary controller. ODI is formulated by optimization with dynamic inversion, such that an optimal voltage is supplied to each damper in a set. The proposed control design has been simulated for both phase-I and phase-II study of the recently developed benchmark highway bridge problem. The efficiency of the proposed controller is analyzed in terms of the performance indices defined in the benchmark problem definition. Simulation results demonstrate that the proposed approach generally reduces peak response quantities over those obtained from the sample semi-active controller, although some response quantities have been seen to be increasing. Overall, the proposed control approach is quite competitive as compared with the sample semi-active control approach.
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Silicon has demonstrated great potential as anode materials for next-generation high-energy density rechargeable lithium ion batteries. However, its poor mechanical integrity needs to be improved to achieve the required cycling stability. Nano-structured silicon has been used to prevent the mechanical failure caused by large volume expansion of silicon. Unfortunately, pristine silicon nanostructures still suffer from quick capacity decay due to several reasons, such as formation of solid electrolyte interphase, poor electrical contact and agglomeration of nanostructures. Recently, increasing attention has been paid to exploring the possibilities of hybridization with carbonaceous nanostructures to solve these problems. In this review, the recent advances in the design of carbon-silicon nanohybrid anodes and existing challenges for the development of high-performance lithium battery anodes are briefly discussed.
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Aluminum-silicon alloy pins were slid against steel disks under nominally dry condition at a speed of 0.6 m s-1. Each pin was slid at a constant load for 5 min, the load being increased in suitable steps from 2 to 65 N. The results show the wear to increase almost monotonically with load, to be sensitive to the presence of silicon in the alloy, and to be insensitive to actual silicon content. The monotonic nature of wear rate-load characteristic suggests that one dominant wear mechanism prevails over the load range studied. Morphological studies of the pin surface and the debris support this contention and point to delamination as being the dominant mode of wear.
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A simple ramp control firing circuit, suitable for use with fully controlled, line-commutated thyristor bridge circuits, is discussed here. This circuit uses very few components and generates the synchronized firing pulses in a simple way. It operates from a single 15 V Supply and has an inherent pulse inhibit facility. This circuit provides the synchronized firing pulses for both thyristors of the same limb in a bridge. To ensure reliability, wide triggering pulses are used, which are modulated to pass through the pulse transformers1 and demodulated before being fed to the thyristor gates. The use of throe such circuits only for a three-phase bridge is discussed.
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There has been a lot of effort to make Silicon optically active. In this work we examine two methods of generating nanocrystals of Silicon from bulk fragments. This approach of ours allows us to play with the shape of the nanocrystals and therefore the degeneracy of the conduction band minimum. We go on to examine whether similar sized particles with different shapes have the same physical properties, and finally whether Silicon may be rendered optically active by this route. While we do find that similar sized particles with different shapes may have different band gaps, this route of modifying the degeneracy of the conduction band minimum makes nano Si slightly optically active.
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The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10-16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.
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This paper proposes a novel modulation strategy for a phase controlled Capacitor-Inductor-Capacitor (CLC) Resonant Dual Active Bridge (RDAB). The proposed modulation strategy improves the soft turn-on, Zero-Current-Switching (ZCS) and Zero-Voltage-Switching (ZVS) range of the converter while only minimally increasing the required reactive currents in the ac link. A mathematical analysis of the proposed modulation scheme is presented along with a theoretical loss comparison between several modulation strategies. The proposed modulation strategy was implemented and the experimental results are presented.
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Silicon tetrahalides, SiX4 (X=F, Cl, Br) and the fluorosilicates of sodium and potassium react with phosphorus pentoxide above 300°C. The tetrahalides give rise to the corresponding phosphoryl halides and silica, while the fluorosilicates form the corresponding metal fluorophosphates and silicon tetrafluoride. The reaction of the fluorosilicates of sodium and potassium with sulphur trioxide occurs at room temperature to give rise to the corresponding metal fluorosulphates and silicon tetrafluoride.
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Few-layer graphene films were grown by chemical vapor deposition and transferred onto n-type crystalline silicon wafers to fabricate graphene/n-silicon Schottky barrier solar cells. In order to increase the power conversion efficiency of such cells the graphene films were doped with nitric acid vapor and an antireflection treatment was implemented to reduce the sunlight reflection on the top of the device. The doping process increased the work function of the graphene film and had a beneficial effect on its conductivity. The deposition of a double antireflection coating led to an external quantum efficiency up to 90% across the visible and near infrared region, the highest ever reported for this type of devices. The combined effect of graphene doping and antireflection treatment allowed to reach a power conversion efficiency of 8.5% exceeding the pristine (undoped and uncoated) device performance by a factor of 4. The optical properties of the antireflection coating were found to be not affected by the exposure to nitric acid vapor and to remain stable over time.
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Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.
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A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.