Ispolnitelʻnyĭ chertezh zdanii︠a︡ Larinskogo selʹsko-khozi︠a︡ĭstvennogo tovarishchestva, v poselke imeni Krasina na uchastku "A"

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Proekt shkoly krestʹ︠a︡nskoĭ molodezhi v Chebotarke, Evpatoriĭskogo raĭona

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Temperatura vozdukha v Krymu v 1925-1926 s.kh.g. v gradisokh T︠S︡elʹt︠s︡ii︠a︡

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Godovoe razpredelenie osadkov (izogiety) v Krymu v 1925-1926 c.kh. g.

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Mnogoletneee srednee godovoe raspredelenie osadkov v Krymu (izogiety)

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Skorostʹ i napravlenie vetra v Krymu 3-go i︠u︡li︠a︡ 1926 goda

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Skorostʹ i napravlenie vetra v Krymu 4-go i︠u︡li︠a︡ 1926 goda

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Karta Evreĭskikh koloniĭ v Krymu obsluzhivaemykh Agro-Dzhoĭntom

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Ogorody kolkhoza imeni Molotova v poselke "Gortenshtadt"

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Zapys zemelʹnyĭ Na pravo korystovanni︠a︡ zemli︠u︡, shcho znakhoditʹsi︠a︡ v Odeskoï guberni Peryletravenʹsʹkyĭ okruzi Kantakuzenʹsʹy raʹoni pid nazvoi︠u︡ Trudovyshyĭ artilʹ Slava

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Zapys zemelʹnyĭ Na pravo korystovanni︠a︡ zemli︠u︡, shcho znakhoditʹsi︠a︡ v Odeskoï guberni Peryletravenʹsʹkyĭ okruzi Kantakuzenʹsʹy raʹoni pid nazvoi︠u︡ Trudovyshyĭ artilʹ Slava

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Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Constraining complex aquifer geometry with geophysics (2-D ERT and MRS measurements) for stochastic modelling of groundwater flow

Stochastic modelling is a useful way of simulating complex hard-rock aquifers as hydrological properties (permeability, porosity etc.) can be described using random variables with known statistics. However, very few studies have assessed the influence of topological uncertainty (i.e. the variability of thickness of conductive zones in the aquifer), probably because it is not easy to retrieve accurate statistics of the aquifer geometry, especially in hard rock context. In this paper, we assessed the potential of using geophysical surveys to describe the geometry of a hard rock-aquifer in a stochastic modelling framework. The study site was a small experimental watershed in South India, where the aquifer consisted of a clayey to loamy-sandy zone (regolith) underlain by a conductive fissured rock layer (protolith) and the unweathered gneiss (bedrock) at the bottom. The spatial variability of the thickness of the regolith and fissured layers was estimated by electrical resistivity tomography (ERT) profiles, which were performed along a few cross sections in the watershed. For stochastic analysis using Monte Carlo simulation, the generated random layer thickness was made conditional to the available data from the geophysics. In order to simulate steady state flow in the irregular domain with variable geometry, we used an isoparametric finite element method to discretize the flow equation over an unstructured grid with irregular hexahedral elements. The results indicated that the spatial variability of the layer thickness had a significant effect on reducing the simulated effective steady seepage flux and that using the conditional simulations reduced the uncertainty of the simulated seepage flux. As a conclusion, combining information on the aquifer geometry obtained from geophysical surveys with stochastic modelling is a promising methodology to improve the simulation of groundwater flow in complex hard-rock aquifers. (C) 2013 Elsevier B.V. All rights reserved.

Report of Chesapeake Biological Laboratory, 1938

Substantial progress was made in 1938 both in respect to additions made in the physical plant and to the problems effectively pursued by an energetic staff.