996 resultados para Nd YV O4


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We demonstrate, for the first time as far as Re known, a passively Q-switched operation of a Nd:YVO4 laser in which a Cr4+:YAG crystal and a laser-diode bar are used as the saturable absorber and the pump source, respectively. Stable laser pulses as short as 28 ns with 20-mu J energy can be generated with this laser, which has the advantages of simplicity, high efficiency, and good long-term stability. (C) 1997 Optical Society of America.

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High-quality Nd:LuVO4 single crystal was successfully grown by Czochralski method. The assessment of the crystalline quality by the chemical etching method and Conoscope image was reported. The absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of Nd: LuVO4 were measured. Laser performance was achieved with Nd:LUVO4 crystal for the transition of F-4(3/2) -> I-4(11/2) (corresponding wavelength 1065.8 nm) in an actively Q-switched operation, and the average output power reached 5.42 W at a pulse repetition frequency (PRF) of 40 kHz under pump power of 18 W, giving an optical conversion efficiency of 30.1%. The pulse energy and peak power reached 138 mu J and 16.2 kW at PRF of 25 kHz under pump power of 14.2 W, and the pulse duration was 8.5 ns. (c) 2005 Elsevier B.V. All rights reserved.

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SiO297wt%Nd^31100800nmNd^362%-42%1064nm

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NdLaSrAlTaO3Nd^3LSATICPAESNd^3Nd^3LSAT0587XXRPDNd^3LSATLSATNd^3LSATNd^3LSAT290sNd^3LSATNd^3YAGNd^3YVO3

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NdYAG3mm3mm3mm,1003mW14

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The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from -80 to +80 degrees C. A linear temperature dependence between -80 and +80 degrees C is reported for the 1.064-mu m peak stimulated emission cross-section of Cr:Nd:YAG crystal. (C) 2005 Elsevier Ltd. All rights reserved.

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Nd^30112nmY^30101nm109Nd^3YAG28 atNdYAGNdGGGNdGGGNdYAGEmism- Emism

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Large sized neodymium-doped Y3Al5O12 (Nd:YAG) laser crystals have been grown by temperature gradient technique (TGT) method and compared with Czochralski (Cz) method. The comparison of these two crystal growth methods has been listed. The results showed that the TGT method has many advantages over the Cz method. The concentration distribution of Nd ions in the crystals was determined and the absorption spectra of these crystals have been investigated and compared. The TGT grown highly doped Nd:YAG crystal has a larger absorption FWHM than that of Cz grown Nd:YAG crysral. Highly doped Nd:YAG (similar to 2.8 at. pct) crystals could be obtained by TGT.

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TGTNdYAGNdYAGNdYAG1200w2s-30

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NdYAGNdYAGNdYAG155NdYAG

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(Cr^4+Nd^3+GGG)QCrCr^4+GGGNd^3+GGG(Cr^4+Nd^3+)GGG(Cr^4+Nd^3+)GGGNd^3+GGG33s250s(Cr^4+Nd^3+)GGGQ

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(Cr^4+Nd^3+:GGG)CrNdJuddofeltt(t=246)McCumber^4F3/2^4I11/2Cr^3+300900nmCr^3+Nd^3+Cr^4+106m

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High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 m pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.