Important GABAergic mechanism within the NTS and the control of sympathetic baroreflex in SHR

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Combined effect of the finasteride and doxazosin on rat ventral prostate morphology and physiology

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electron transfer between adjacent layers in self-assembled films

A simple model of electron transfer is adapted to explain fluorescence quenching in self-assembled films of poly( p-phenylene vinylene) (PPV) alternating with poly(thiophene acetic acid) (PTAA). Quenching is caused by a photo-induced electron transfer between the excited PPV (donor, D) and the PTAA (acceptor, A). The electron-transfer process can be mediated by insertion of electronically inert spacing bilayers between the D and A layers, As the number of bilayers is increased, the fluorescence is gradually recovered which is explained theoretically by assuming that the electron-transfer rate can be described as k = Z exp(- beta r) where r is the distance between D and A. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Modulation of intercellular communication in macrophages: possible interactions between GAP junctions and P2 receptors

Gap junctions are connexin-formed channels that play an important role in intercellular communication in most cell types. In the immune system, specifically in macrophages, the expression of connexins and the establishment of functional gap junctions are still controversial issues. Macrophages express P2X(7) receptors that, once activated by the binding of extracellular ATP, lead to the opening of transmembrane pores permeable to molecules of up to 900 Da. There is evidence suggesting an interplay between gap junctions and P2 receptors in different cell systems. Thus, we used ATP-sensitive and -insensitive J774.G8 macrophage cell lines to investigate this interplay. To study junctional communication in J774-macrophage-like cells, we assessed cell-to-cell communication by microinjecting Lucifer Yellow. Confluent cultures of ATP-sensitive J774 cells (ATP-s cells) are coupled, whereas ATP-insensitive J774 cells (ATP-i cells), derived by overexposing J774 cells to extracellular ATP until they do not display the phenomenon of ATP-induced permeabilization, are essentially uncoupled. Western-blot and reverse-transcription polymerase chain reaction assays revealed that ATP-s and ATP-i cells express connexin43 (Cx43), whereas only ATP-s cells express the P2X(7) receptor. Accordingly, ATP-i cells did not display any detectable ATP-induced current under whole-cell patch-clamp recordings. Using immunofluorescence microscopy, Cx43 reactivity was found at the cell surface and in regions of cell-cell contact of ATP-s cells, whereas, in ATP-i cells, Cx43 immunoreactivity was only present in cytosolic compartments. Using confocal microscopy, it is shown here that, in ATP-s cells as well as in peritoneal macrophages, Cx43 and P2X(7) receptors are co-localized to the membrane of ATP-s cells and peritoneal macrophages.

Matrizes semicondutoras GaAs e Sn'X IND. 2' dopado com terras-raras Ce ou Eu: investigação do transporte elétrico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influência da acidez da suspensão coloidal para a geração de defeitos pontuais e emissão no infra vermelho em SnO2 dopado com Er

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Síntese e caracterização elétrica de filmes varistores à base de 'SN''O IND.2' modificados superficialmente por difusão 'CR POT.3+' na região do contorno de grão

Pós-graduação em Química - IQ

Estudo dos processos de geração e transferência de cargas em corantes cianinas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Deposizione elettrochimica di film polimerici foto-attivi per la realizzazione di celle solari

Plastic solar cells bear the potential for large-scale power generation based on flexible, lightweight, inexpensive materials. Since the discovery of the photo-induced electron transfer from a conjugated polymer (electron-donor) to fullerene or its derivatives molecules (electron-acceptors), followed by the introduction of the bulk heterojunction concept which means donors and acceptors blended together to realize the fotoactive layer, materials and deposition techniques have been extensively studied. In this work, electrochemical-deposition methods of polymeric conductive films were studied in order to realize bulk heterojunction solar cells. Indium Tin Oxide (ITO) glass electrodes modified with a thin layer of poly(3,4-ethylenedioxythiophene) (PEDOT) were electrochemically prepared under potentiodynamic and potentiostatic conditions; then those techniques were applied for the electrochemical co-deposition of donor and acceptor on modified ITO electrode to produce the active layer (blend). For the deposition of the electron-donor polymer the electropolymerization of many functionalized thiophene monomers was investigated while, as regards acceptors, fullerene was used first, then the study was focused on its derivative PCBM ([6,6]-phenyl-C61-butyric acid methyl ester). The polymeric films obtained (PEDOT and blend) were electrochemically and spectrophotometrically characterized and the film thicknesses were evaluated by atomic force microscopy (AFM). Finally, to check the performances and the efficiency of the realized solar cells, tests were carried out under standard conditions. Nowadays bulk heterojunction solar cells are still poorly efficient to be competitively commercialized. A challenge will be to find new materials and better deposition techniques in order to obtain better performances. The research has led to several breakthroughs in efficiency, with a power conversion efficiency approaching 5 %. The efficiency of the solar cells produced in this work is even lower (lower than 1 %). Despite all, solar cells of this type are interesting and may represent a cheaper and easier alternative to traditional silicon-based solar panels.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Photokathoden mit internem DBR-Reflektor als Quellen hochintensiver spinpolarisierter Elektronenstrahlen

Die Erzeugung von Elektronenstrahlen hoher Intensität (I$geq$2,mA) und hoher Spinpolarisation (P$geq$85%) ist für die Experimente an den geplanten glqq Linac Ringgrqq Electron--Ion--Collidern (z.B. eRHIC am Brookhaven National Laboratory) unabdingbar, stellt aber zugleich eine enorme Herausforderung dar. Die Photoemission aus ce{GaAs}--basierten Halbleitern wie z.B. den in dieser Arbeit untersuchten GaAlAs/InGaAlAs Quanten--Übergittern zeichnet sich zwar durch eine hohe Brillanz aus, die geringe Quantenausbeute von nur ca. 1% im Bereich maximaler Polarisation erfordert jedoch hohe Laserintensitäten von mehreren Watt pro $text{cm}^{2}$, was erhebliche thermische Probleme verursacht. rnrnIn dieser Arbeit konnte zunächst gezeigt werden, dass die Lebensdauer einer Photokathode mit steigender Laserleistung bzw. Temperatur exponentiell abnimmt. Durch Einbringen eines DBR--Spiegels zwischen die aktive Zone der Photokathode und ihr Substrat wird ein Großteil des ungenutzten Laserlichts wieder aus dem Kristall herausreflektiert und trägt somit nicht zur Erwärmung bei. Gleichzeitig bildet der Spiegel zusammen mit der Grenzfläche zum Vakuum eine Resonator--Struktur aus, die die aktive Zone umschließt. Dadurch kommt es für bestimmte Wellenlängen zu konstruktiver Interferenz und die Absorption in der aktiven Zone erhöht sich. Beide Effekte konnten durch vergleichenden Messungen an Kathoden mit und ohne DBR--Spiegel nachgewiesen werden. Dabei ergibt sich eine gute Übereinstimmung mit der Vorhersage eines Modells, das auf der dielektrischen Funktion der einzelnen Halbleiterstrukturen beruht. Von besonderer praktischer Bedeutung ist, dass die DBR--Kathode für einen gegebenen Photoemissions-strom eine um einen Faktor $geq$,3{,}5 kleinere Erwärmung aufweist. Dies gilt über den gesamten Wellenlängenbereich in dem die Kathode eine hohe Strahlpolarisation (P$>$80%) produzieren kann, auch im Bereich der Resonanz.rnAus zeitaufgelösten Messungen der Ladungsverteilung und Polarisation lassen sich sowohl Rückschlüsse über die Transportmechanismen im Inneren einer Kathode als auch über die Beschaffenheit ihrer Oberfläche ziehen. Im Rahmen dieser Dissertation konnte die Messgeschwindigkeit der verwendeten Apparatur durch den Einbau eines schnelleren Detektors und durch eine Automatisierung der Messprozedur entscheidend vergrößert und die resultierende Zeitauflösung mit jetzt 1{,}2 Pikosekunden annähernd verdoppelt werden.rnrnDie mit diesen Verbesserungen erhaltenen Ergebnisse zeigen, dass sich der Transport der Elektronen in Superlattice--Strukturen stark vom Transport in den bisher untersuchten Bulk--Kristallen unterscheidet. Der Charakter der Bewegung folgt nicht dem Diffusionsmodell, sondern gibt Hinweise auf lokalisierte Zustände, die nahe der Leitungsbandunterkante liegen und Elektronen für kurze Zeit einfangen können. Dadurch hat die Impulsantwort einer Kathode neben einem schnellen Abfall des Signals auch eine größere Zeitkonstante, die selbst nach 30,ps noch ein Signal in der Größenordnung von ca. 5textperthousand der Maximalintensität erzeugt.

Nanocrystalline Silicon Based Films for Renewable Energy Applications

The present thesis is focused on the study of innovative Si-based materials for third generation photovoltaics. In particular, silicon oxi-nitride (SiOxNy) thin films and multilayer of Silicon Rich Carbide (SRC)/Si have been characterized in view of their application in photovoltaics. SiOxNy is a promising material for applications in thin-film solar cells as well as for wafer based silicon solar cells, like silicon heterojunction solar cells. However, many issues relevant to the material properties have not been studied yet, such as the role of the deposition condition and precursor gas concentrations on the optical and electronic properties of the films, the composition and structure of the nanocrystals. The results presented in the thesis aim to clarify the effects of annealing and oxygen incorporation within nc-SiOxNy films on its properties in view of the photovoltaic applications. Silicon nano-crystals (Si NCs) embedded in a dielectric matrix were proposed as absorbers in all-Si multi-junction solar cells due to the quantum confinement capability of Si NCs, that allows a better match to the solar spectrum thanks to the size induced tunability of the band gap. Despite the efficient solar radiation absorption capability of this structure, its charge collection and transport properties has still to be fully demonstrated. The results presented in the thesis aim to the understanding of the transport mechanisms at macroscopic and microscopic scale. Experimental results on SiOxNy thin films and SRC/Si multilayers have been obtained at macroscopical and microscopical level using different characterizations techniques, such as Atomic Force Microscopy, Reflection and Transmission measurements, High Resolution Transmission Electron Microscopy, Energy-Dispersive X-ray spectroscopy and Fourier Transform Infrared Spectroscopy. The deep knowledge and improved understanding of the basic physical properties of these quite complex, multi-phase and multi-component systems, made by nanocrystals and amorphous phases, will contribute to improve the efficiency of Si based solar cells.

Erste Messung der Pi-0-Photoproduktion an transversal polarisierten Protonen nahe der Schwelle

Diese Arbeit befasst sich mit der photoinduzierten Erzeugung neutraler Pionen, sehr nahe an der Schwellenenergie. Dabei werden zwei Ziele verfolgt: Zum einen die Überprüfung von Vorhersagen dieser effektiven Theorien und Modelle, zum anderen werden hier erstmals alle relevanten Partialwellenamplituden modellunabhängig aus gemessenen Observablen bestimmt. Diese Methode soll in Zukunft auch bei höheren Energien im Bereich der Nukleonresonanzen Anwendung finden. rnrnKonkret wird die Durchführung und Analyse eines Experiments vorgestellt, welches am Mainzer Mikrotron (MAMI) in den Jahren 2010 bis 2013 mit zirkular polarisiertem Photonenstrahl stattfand. Der Photonenstrahl wurde an einer Anlage zur Erzeugung energiemarkierter Bremsstrahlung aus dem Elektronenstrahl von MAMI gewonnen. Zum Nachweis der Reaktionsprodukte diente das hermetische 4pi CB/TAPS-Detektorsystem. Erstmalig standen bei derartigen Messungen auch transversal polarisierte Protonen zur Verfügung. Dazu wird Butanol in einer speziellen Apparatur dynamisch polarisiert. Molekularer Wasserstoff lässt sich aufgrund der para-Konfiguration nicht polarisieren. Wegen der Verwendung von Butanol als Targetmaterial, bei dem weniger als 5% aller erzeugten Pionen an polarisierten Protonen produziert wurden, ist die Behandlung des Untergrunds eine zentrale Aufgabe. rnrnEs werden zwei Methoden der Untergrundseparation vorgestellt, wovon die bessere in der Analyse angewendet wurde. Abschließend findet eine ausführliche Bewertung systematischer Fehler statt.rnrnDie erstmalige Verwendung transversal polarisierter Protonen ermöglicht den Zugang zu bisher nicht gemessenen Spin"=Freiheitsgraden. In Kombination mit einem komplementären Vorläufer-Experiment aus dem Jahr 2008 mit linear polarisiertem Photonenstrahl konnten aus den gewonnenen Daten erstmals alle komplexen s- und p-Partialwellenamplituden modellunabhängig bestimmt werden. rnrnDarüber hinaus wurden im Rahmen dieser Arbeit wesentliche Verbesserungen am apparativen Aufbau erzielt. Beispiele sind ein Elektronenstrahl-Polarimeter, ein zellularer CB-Multiplizitätstrigger, sowie signifikante Verbesserungen der Datennahmeelektronik und des Triggersystems, die teilweise in dieser Arbeit vorgestellt werden.

Downregulation of Rap1GAP contributes to Ras transformation.

Although abundant in well-differentiated rat thyroid cells, Rap1GAP expression was extinguished in a subset of human thyroid tumor-derived cell lines. Intriguingly, Rap1GAP was downregulated selectively in tumor cell lines that had acquired a mesenchymal morphology. Restoring Rap1GAP expression to these cells inhibited cell migration and invasion, effects that were correlated with the inhibition of Rap1 and Rac1 activity. The reexpression of Rap1GAP also inhibited DNA synthesis and anchorage-independent proliferation. Conversely, eliminating Rap1GAP expression in rat thyroid cells induced a transient increase in cell number. Strikingly, Rap1GAP expression was abolished by Ras transformation. The downregulation of Rap1GAP by Ras required the activation of the Raf/MEK/extracellular signal-regulated kinase cascade and was correlated with the induction of mesenchymal morphology and migratory behavior. Remarkably, the acute expression of oncogenic Ras was sufficient to downregulate Rap1GAP expression in rat thyroid cells, identifying Rap1GAP as a novel target of oncogenic Ras. Collectively, these data implicate Rap1GAP as a putative tumor/invasion suppressor in the thyroid. In support of that notion, Rap1GAP was highly expressed in normal human thyroid cells and downregulated in primary thyroid tumors.