O lado invisível da participação política : gestão da informação dos mecanismos digitais de participação política nos parlamentos da América Latina, com uma análise do caso da Câmara dos Deputados do Brasil

Examina uma das dimensões dos mecanismos digitais de interação e participação política oferecidos por parlamentos para a sociedade - a gestão da informação. São mapeadas as formas de participação política empregadas nos portais legislativos da América Latina, com o objetivo de conhecer as informações que cercam as iniciativas e contextualizar o estudo de caso da Câmara dos Deputados do Brasil. Procura-se entender como a Câmara dos Deputados do Brasil realiza a coleta, a organização, a distribuição, o armazenamento e o uso da informação concernente aos mecanismos de interação e participação política, de caráter multilateral, empregados em seu Portal. Conclui-se que os parlamentos latino-americanos colocam à disposição da sociedade dezenas de canais digitais de interação e participação, como uma tendência irreversível das democracias modernas, mas a gestão da informação inerente às experiências ainda é um desafio a ser alcançado.

Análise de questões relacionadas à governança, segurança, publicidade e formatos que impactam a utilização de documentos digitais em processos de contratação de serviços de TIC

A possibilidade de automação de processos de trabalho de contratação de serviços de TI na administração pública e o consequente uso de documentos digitais para registrar tais processos trazem novos desafio e incertezas que deverão ser tratadas no âmbito normativo e de boas práticas. O artigo propõe seis questões relacionadas à gestão arquivística de documentos digitais utilizados em processos de contratação de serviços de TIC. Para cada questão, foram identificados o contexto tecnológico e normativo da questão, as principais referências normativas de melhores práticas aplicáveis à questão com observações apontando lacunas relativas à aplicação e as possíveis propostas para responder à questão.

Estudio y desarrollo de un asistente (wizard) para la generación de interfaces de usuario abstractas en entornos ubicuos.

En el presente proyecto se pretende desarrollar una herramienta, que tiene como objetivo asistir a diseñadores de servicios ubicuos en el proceso de generación de interfaces abstractas de usuario para entornos ubicuos. Esta herramienta facilita la tarea a los diseñadores eliminando la necesidad de que conozcan la sintaxis UIML de descripción de interfaces de usuario, ya que el documento que guarda dicha descripción se genera automáticamente tras la utilización del asistente. Este asistente permite también, enriquecer dichas descripciones ofreciendo la posibilidad de asociar a los diferentes objetos abstractos de interacción que componen la interfaz, distintos tipos de recursos multimedia. El documento UIML generado se integra en el sistema Egoki, proporcionándole la entrada necesaria para generar interfaces de usuario accesibles y adaptadas a las necesidades de las personas que desean utilizar los servicios ubicuos.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.

Investigations of charge-carrier dynamics at semiconductor/liquid interfaces

Theoretical and experimental investigations of charge-carrier dynamics at semiconductor/liquid interfaces, specifically with respect to interfacial electron transfer and surface recombination, are presented.

Fermi's golden rule has been used to formulate rate expressions for charge transfer of delocalized carriers in a nondegenerately doped semiconducting electrode to localized, outer-sphere redox acceptors in an electrolyte phase. The treatment allows comparison between charge-transfer kinetic data at metallic, semimetallic, and semiconducting electrodes in terms of parameters such as the electronic coupling to the electrode, the attenuation of coupling with distance into the electrolyte, and the reorganization energy of the charge-transfer event. Within this framework, rate constant values expected at representative semiconducting electrodes have been determined from experimental data for charge transfer at metallic electrodes. The maximum rate constant (i.e., at optimal exoergicity) for outer-sphere processes at semiconducting electrodes is computed to be in the range 10^-17-10^-16 cm⁴ s^-1, which is in excellent agreement with prior theoretical models and experimental results for charge-transfer kinetics at semiconductor/liquid interfaces.

Double-layer corrections have been evaluated for semiconductor electrodes in both depletion and accumulation conditions. In conjuction with the Gouy-Chapman-Stern model, a finite difference approach has been used to calculate potential drops at a representative solid/liquid interface. Under all conditions that were simulated, the correction to the driving force used to evaluate the interfacial rate constant was determined to be less than 2% of the uncorrected interfacial rate constant.

Photoconductivity decay lifetimes have been obtained for Si(111) in contact with solutions of CH₃OH or tetrahydrofuran containing one-electron oxidants. Silicon surfaces in contact with electrolyte solutions having Nernstian redox potentials > 0 V vs. SCE exhibited low effective surface recombination velocities regardless of the different surface chemistries. The formation of an inversion layer, and not a reduced density of electrical trap sites on the surface, is shown to be responsible for the long charge-carrier lifetimes observed for these systems. In addition, a method for preparing an air-stable, low surface recombination velocity Si surface through a two-step, chlorination/alkylation reaction is described.