Role of carrier density and disorder on anisotropic charge transport in polypyrrole

Polypyrrole (PPy) has been synthesized electrochemically on platinum substrate by varying synthesis temperature and dopant concentration. The charge transport in PPy has been investigated as a function of temperature for both in-plane and out-of-plane geometry in a wide temperature range of 5K-300 K. The charge transport showed strong anisotropy and various mechanisms were used to explain the transport. The conductivity ratio, sigma(r) = sigma(300 K)/sigma(5 K) is calculated for each sample to quantify the relative disorder. At all the temperatures, the conductivity values for in-plane transport are found to be more for PPy synthesized at lower temperature, while the behavior is found to be different for out-of-plane transport. The carrier density is found to play a crucial role in case of in-plane transport. An effort has been made to correlate charge transport to morphology by analyzing temperature and frequency dependence of conductivity. Charge transport in lateral direction is found to be dominated by hopping whereas tunneling mechanisms are dominated in vertical direction. Parameters such as density of states at the Fermi level N(E-F)], average hopping distance (R), and average hopping energy (W) have been estimated for each samples in both geometry. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4775405]

Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire

The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

Effects of different modes of hot cross-rolling in 7010 aluminum alloy: part II. mechanical properties anisotropy

The influence of microstructure and texture developed by different modes of hot cross-rolling on in-plane anisotropy (A (IP)) of yield strength, work hardening behavior, and anisotropy of Knoop hardness (KHN) yield locus has been investigated. The A (IP) and work hardening behavior are evaluated by tensile testing at 0 deg, 45 deg, and 90 deg to the rolling direction, while yield loci have been generated by directional KHN measurements. It has been observed that specimens especially in the peak-aged temper, in spite of having a strong, rotated Brass texture, show low A (IP). The results are discussed on the basis of Schmid factor analyses in conjunction with microstructural features, namely grain morphology and precipitation effects. For the specimen having a single-component texture, the yield strength variation as a function of orientation can be rationalized by the Schmid factor analysis of a perfectly textured material behaving as a quasi-single crystal. The work hardening behavior is significantly affected by the presence of solute in the matrix and the state of precipitation rather than texture, while yield loci derived from KHN measurements reiterate the low anisotropy of the materials. Theoretic yield loci calculated from the texture data using the visco-plastic self-consistent model and Hill's anisotropic equation are compared with that obtained experimentally.

Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet

In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.

On Uniform Approximate Solutions in Bending of Symmetric Laminated Plates

A layer-wise theory with the analysis of face ply independent of lamination is used in the bending of symmetric laminates with anisotropic plies. More realistic and practical edge conditions as in Kirchhoff's theory are considered. An iterative procedure based on point-wise equilibrium equations is adapted. The necessity of a solution of an auxiliary problem in the interior plies is explained and used in the generation of proper sequence of two dimensional problems. Displacements are expanded in terms of polynomials in thickness coordinate such that continuity of transverse stresses across interfaces is assured. Solution of a fourth order system of a supplementary problem in the face ply is necessary to ensure the continuity of in-plane displacements across interfaces and to rectify inadequacies of these polynomial expansions in the interior distribution of approximate solutions. Vertical deflection does not play any role in obtaining all six stress components and two in-plane displacements. In overcoming lacuna in Kirchhoff's theory, widely used first order shear deformation theory and other sixth and higher order theories based on energy principles at laminate level in smeared laminate theories and at ply level in layer-wise theories are not useful in the generation of a proper sequence of 2-D problems converging to 3-D problems. Relevance of present analysis is demonstrated through solutions in a simple text book problem of simply supported square plate under doubly sinusoidal load.

Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.

Electric field activated nonlinear anisotropic charge transport in doped polypyrrole

Electric field activated nonlinear transport is investigated in polypyrrole thin film in both in-plane and out-of-plane geometries down to 5 K and strong anisotropy is observed. A morphological model is suggested to explain the anisotropy through inter-chain and intra-chain transport. The deviation from the variable range hopping at low temperature is accounted by fluctuation assisted transport. From Zabrodaskii plots, it is found that electric field can tune the transport from insulating to metallic regime. Glazman-Matveev model is used to describe the nonlinear conduction. Field scaling analysis shows that conductance data at different temperature falls on to a single curve. Nonlinearity exponent, m(T) and characteristic length, L-E are estimated to characterize the transport in both the geometries. (C) 2013 AIP Publishing LLC.

Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si: P and Ge: P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Incipient straining in severe plastic deformation methods

Knowledge of the plasticity associated with the incipient stage of chip formation is useful toward developing an understanding of the deformation field underlying severe plastic deformation processes. The transition from a transient state of straining to a steady state was investigated in plane strain machining of a model material system-copper. Characterization of the evolution to a steady-state deformation field was made by image correlation, hardness mapping, load analysis, and microstructure characterization. Empirical relationships relating the deformation heterogeneity and the process parameters were found and explained by the corresponding effects on shear plane geometry. The results are potentially useful to facilitate a framework for process design of large strain deformation configurations, wherein transient deformation fields prevail. These implications are considered in the present study to quantify the efficiency of processing methods for bulk ultrafine-grained metals by large strain extrusion machining and equal channel angular pressing.

Exchange bias in strained SrRuO3 thin films

Recently, it was found that the ferromagnetic SrRuO3 when combined with another ferromagnet in thin film form gives rise to exchange bias (EB) effect. However, we observed EB in single, strained, SrRuO3 thin films grown on diamagnetic LaAlO3 (100) substrates. It displays the training effect, which essentially confirms EB. The temperature dependence of the EB reveals the blocking temperature to be around similar to 75 K. The strength of the exchange bias decreases with the increase in thickness of the film. We observe tensile strain in the out of plane direction. Further, the presence of in-plane compressive strain is observed through asymmetric reciprocal space mapping. Finally, we find a direct link between strain and EB. The evolution of strain with thickness matches well with the nature of scaled EB. It has been shown earlier by first principle calculations that this strain can induce EB in thin films. (C) 2014 AIP Publishing LLC.

Kinetics of dispersion of nanoparticles in thin polymer films at high temperature

We report the first detailed study of the kinetics of dispersion of nanoparticles in thin polymer films using temperature dependent in situ X-ray scattering measurements. We show a comparably enhanced dispersion at higher temperatures for systems which are otherwise phase segregated at room temperature. Detailed analysis of the time dependent X-ray reflectivity and diffuse scattering data allows us to explore the out-of-plane and in-plane mobility of the nanoparticles in the polymer films. While the out-of-plane motion is diffusive with a diffusion coefficient almost two orders of magnitude lower than that expected in bulk polymer, the in-plane one is found to be super-diffusive resulting in significantly larger in-plane displacement at similar time scales. We discuss the origin of the observed highly anisotropic motion of nanoparticles due to their slaved motion with respect to the anisotropic chain orientation and consequent diffusivity anisotropy of matrix chains. We also suggest strategies to utilize these observations to kinetically improve dispersion in otherwise thermodynamically segregated polymer nanocomposite films.

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Phosphorene, a two-dimensional analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field, which are difficult to achieve experimentally. Here, we show using density functional theory based calculations the possibility of tuning electronic properties by applying normal compressive strain in bilayer phosphorene. A complete and fully reversible semiconductor to metal transition has been observed at similar to 13.35% strain, which can be easily realized experimentally. Furthermore, a direct to indirect bandgap transition has also been observed at similar to 3% strain, which is a signature of unique band-gap modulation pattern in this material. The absence of negative frequencies in phonon spectra as a function of strain demonstrates the structural integrity of the sheets at relatively higher strain range. The carrier mobilities and effective masses also do not change significantly as a function of strain, keeping the transport properties nearly unchanged. This inherent ease of tunability of electronic properties without affecting the excellent transport properties of phosphorene sheets is expected to pave way for further fundamental research leading to phosphorene-based multi-physics devices.

Investigation on two magnon scattering processes in pulsed laser deposited epitaxial nickel zinc ferrite thin film

Ferromagnetic resonance (FMR) measurements are employed to evaluate the presence of the two magnon scattering contribution in the magnetic relaxation processes of the epitaxial nickel zinc ferrite thin films deposited using pulsed laser deposition (PLD) on the (0 0 1) MgAl2O4 substrate. Furthermore, the reciprocal space mapping reveals the presence of microstructural defects which acts as an origin for the two magnon scattering process in this thin film. The relevance of this scattering process is further discussed for understanding the higher FMR linewidth in the in-plane configuration compared to the out-of-plane configuration. FMR measurements also reveal the presence of competing uniaxial and cubic anisotropy in the studied films.

Isotopic fractionation in proteins as a measure of hydrogen bond length

If a deuterated molecule containing strong intramolecular hydrogen bonds is placed in a hydrogenated solvent, it may preferentially exchange deuterium for hydrogen. This preference is due to the difference between the vibrational zero-point energy for hydrogen and deuterium. It is found that the associated fractionation factor (I) is correlated with the strength of the intramolecular hydrogen bonds. This correlation has been used to determine the length of the H-bonds (donor-acceptor separation) in a diverse range of enzymes and has been argued to support the existence of short low-barrier H-bonds. Starting with a potential energy surface based on a simple diabatic state model for H-bonds, we calculate (I) as a function of the proton donor-acceptor distance R. For numerical results, we use a parameterization of the model for symmetric 0-H. ``.0 bonds R. H. McKenzie, Chem. Phys. Lett. 535, 196 (2012)]. We consider the relative contributions of the 0-H stretch vibration, O-H bend vibrations (both in plane and out of plane), tunneling splitting effects at finite temperature, and the secondary geometric isotope effect. We compare our total (I) as a function of R with NMR experimental results for enzymes, and in particular with an earlier model parametrization (D(R), used previously to determine bond lengths. (C) 2015 AIP Publishing LLC.

The relationship of SIF between plate and plane fracture problems and the effect of the plate thickness on SIF

In the present paper, it is shown that the zero series eigenfunctions of Reissner plate cracks/notches fracture problems are analogous to the eigenfunctions of anti-plane and in-plane. The singularity in the double series expression of plate problems only arises in zero series parts. In view of the relationship with eigen-values of anti-plane and in-plane problem, the solution of eigen-values for Reissner plates consists of two parts: anti-plane problem and in-plane problem. As a result the corresponding eigen-values or the corresponding eigen-value solving programs with respect to the anti-plane and in-plane problems can be employed and many aggressive SIF computed methods of plane problems can be employed in the plate. Based on those, the approximate relationship of SIFs between the plate and the plane fracture problems is figured out, and the effect relationship of the plate thickness on SIF is given.