962 resultados para I-V-T


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Factor V (FV) present in platelet alpha-granules has a significant but incompletely understood role in hemostasis. This report demonstrates that a fraction of platelets express very high levels of surface-bound, alpha-granule FV on simultaneous activation with 2 agonists, thrombin and convulxin, an activator of the collagen receptor glycoprotein VI. This subpopulation of activated platelets represents 30.7% +/- 4.7% of the total population and is referred to as convulxin and thrombin-induced-FV (COAT-FV) platelets. COAT-FV platelets are also observed on activation with thrombin plus collagen types I, V, or VI, but not with type III. No single agonist examined was able to produce COAT-FV platelets, although ionophore A23187 in conjunction with either thrombin or convulxin did generate this population. COAT-FV platelets bound annexin-V, indicating exposure of aminophospholipids and were enriched in young platelets as identified by the binding of thiazole orange. The functional significance of COAT-FV platelets was investigated by demonstrating that factor Xa preferentially bound to COAT-FV platelets, that COAT-FV platelets had more FV activity than either thrombin or A23187-activated platelets, and that COAT-FV platelets were capable of generating more prothrombinase activity than any other physiologic agonist examined. Microparticle production by dual stimulation with thrombin and convulxin was less than that observed with A23187, indicating that microparticles were not responsible for all the activities observed. These data demonstrate a new procoagulant component produced from dual stimulation of platelets with thrombin and collagen. COAT-FV platelets may explain the unique role of alpha-granule FV and the hemostatic effectiveness of young platelets. (Blood. 2000;95:1694-1702)

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In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

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Definición, construcción y puesta en marcha de un trazador de Curvas I-V en placas fotovoltaicas con fines docentes, comparándolo con otros métodos de medida. Para lo cual se han realizado diferentes ensayos: Barrido de Curva V-I módulo KC50 Barrido de Curva V-I módulo KC85GX-2P Barrido de Curva V-I con sombreado de células Barrido de Curva V-I con conexión en serie y en paralelo Barrido de Curva V-I sin diodos “by-pass” Barrido de Curva V-I con conexión en serie y en paralelo sin diodos “by-pass” Abstract Definition, construction and startup of a tracer IV curves in photovoltaic panels for teaching purposes, compared to other measurement methods. The trials completed can be summarized as follows: Sweep curve V-I module KC50. Sweep curve V-I module KC85GX-2P Sweep curve V-I with shaded cells. Sweep curve V-I with series and parallel connections. Sweep curve V-I without “by-pass” diode. Sweep curve V-I with series and parallel connections without “by-pass” diodes.

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V(D)J rearrangement is the molecular mechanism by which an almost infinite array of specific immune receptors are generated. Defects in this process result in profound immunodeficiency as is the case in the C.B-17 SCID mouse or in RAG-1 (recombination-activating gene 1) or RAG-2 deficient mice. It has recently become clear that the V(D)J recombinase most likely consists of both lymphoid-specific factors and ubiquitously expressed components of the DNA double-strand break repair pathway. The deficit in SCID mice is in a factor that is required for both of these pathways. In this report, we show that the factor defective in the autosomal recessive severe combined immunodeficiency of Arabian foals is required for (i) V(D)J recombination, (ii) resistance to ionizing radiation, and (iii) DNA-dependent protein kinase activity.

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Translated and edited by K.A. Timiri︠a︡zev and others.

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Includes revised editions when originals not available.

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"Predlagaemyĭ pervyĭ vypusk ... predstavli︠a︡et perepechatku, s ni︠e︡kotorymi dopolnenīi︠a︡mi, stateĭ, poi︠a︡vli︠a︡vshchikhsi︠a︡ v Zhurnali︠e︡ Ministerstva narodnago prosvi︠e︡shchenīi︠a︡ 1887-1889 godov" -p. [iii]

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Mode of access: Internet.

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Romanized record.