Dynamic growth of tensile cracks by ductile and brittle fracture mechanisms in a viscoplastic material

In this paper, a finite element analysis of steady-state dynamic crack growth under Mode I, plane strain, small-scale yielding conditions is performed in a rate dependent plastic material characterized by the over-stress model. The main objective of the paper is to obtain theoretically the dependence of dynamic fracture toughness on crack speed. Crack propagation due to a ductile (micro-void) mechanism or a brittle (cleavage) mechanism, as well as transition from one mode to another are considered. The conversion from ductile to brittle has been observed experimentally but has received very little attention using analytical methods. Local fracture criteria based on strains and stresses are used to describe ductile and brittle fracture mechanisms. The results obtained in this paper are in general agreement with micro-structural observations of mode conversion during fracture initiation. Finally, the particular roles played by material rate sensitivity and inertia are examined in some detail.

Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ‘‘burst mode’’ technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/☒. The films are chemically homogeneous and grow preferentially along 〈200〉 direction.

Study of interdiffusion and growth of topologically closed packed phases in the Co-Nb system

Interdiffusion study of the Co-Nb system is conducted to determine the diffusion parameters in different phases. The integrated diffusion coefficients at different temperatures are calculated for the Nb2Co7 phase, which has very narrow composition range. The interdiffusion coefficients at different compositions in the NbCo2 Laves phase are determined. The interdiffusion coefficient in this phase decreases with increasing Nb content to the stoichiometric composition. Further, the average interdiffusion coefficient in the N6Co7-mu phase is determined. The activation energies for diffusion in different phases are calculated, providing valuable information regarding the diffusion mechanism. In addition, an experiment using Kirkendall markers is conducted to calculate the relative mobilities of the species.

Growth of alkali metal periodates from silica gel and their characterization

Single crystals (up to 1 cm size) of K, Rb and Cs periodates have been grown in silica gel. In general, good quality crystals were obtained in gel of specific gravity 1.04 and pH 4. The metal/iodine ratios were determined and compared with calculated values. Morphological studies were carried out using a bicircle optical goniometer. Other characterization methods include X-ray diffraction, optical absorption, differential scanning calorimetry and optical microscopy. Microscopic examination of CsIO4 crystals in particular has revealed the existence of ferroelastic domains in the crystal. The structural basis for the occurence of ferroelasticity in this crystal is discussed and the high temperature space group is predicted.

Perturbative growth of cosmological clustering. I: Formalism

Here we rederive the hierarchy of equations for the evolution of distribution functions of various orders using a convenient parameterization. We use this to obtain equations for two- and three-point correlation functions in powers of a small parameter, viz., the initial density contrast. The correspondence of the lowest order solutions of these equations to the results from the linear theory of density perturbations is shown for an OMEGA = 1 universe. These equations are then used to calculate, to the lowest order, the induced three-point correlation function that arises from Gaussian initial conditions in an OMEGA = 1 universe. We obtain an expression which explicitly exhibits the spatial structure of the induced three-point correlation function. It is seen that the spatial structure of this quantity is independent of the value of OMEGA. We also calculate the triplet momentum. We find that the induced three-point correlation function does not have the ''hierarchical'' form often assumed. We discuss possibilities of using the induced three-point correlation to interpret observational data. The formalism developed here can also be used to test a validity of different schemes to close the

Perturbative growth of cosmological clustering .2. The two-point correlation

We use the BBGKY hierarchy equations to calculate, perturbatively, the lowest order nonlinear correction to the two-point correlation and the pair velocity for Gaussian initial conditions in a critical density matter-dominated cosmological model. We compare our results with the results obtained using the hydrodynamic equations that neglect pressure and find that the two match, indicating that there are no effects of multistreaming at this order of perturbation. We analytically study the effect of small scales on the large scales by calculating the nonlinear correction for a Dirac delta function initial two-point correlation. We find that the induced two-point correlation has a x(-6) behavior at large separations. We have considered a class of initial conditions where the initial power spectrum at small k has the form k(n) with 0 < n less than or equal to 3 and have numerically calculated the nonlinear correction to the two-point correlation, its average over a sphere and the pair velocity over a large dynamical range. We find that at small separations the effect of the nonlinear term is to enhance the clustering, whereas at intermediate scales it can act to either increase or decrease the clustering. At large scales we find a simple formula that gives a very good fit for the nonlinear correction in terms of the initial function. This formula explicitly exhibits the influence of small scales on large scales and because of this coupling the perturbative treatment breaks down at large scales much before one would expect it to if the nonlinearity were local in real space. We physically interpret this formula in terms of a simple diffusion process. We have also investigated the case n = 0, and we find that it differs from the other cases in certain respects. We investigate a recently proposed scaling property of gravitational clustering, and we find that the lowest order nonlinear terms cause deviations from the scaling relations that are strictly valid in the linear regime. The approximate validity of these relations in the nonlinear regime in l(T)-body simulations cannot be understood at this order of evolution.

Growth of Nanometric Gold Particles in Solution Phase

The time evolution of colloidal gold particles in the nanometric regime has been investigated by employing electron microscopy and electronic absorption spectroscopy. The particle size distributions are essentially Gaussian and show the same time dependence for both the mean and the standard deviation, enabling us to obtain a time-independent universal curve for the particle size. Temperature dependent studies show the growth to be an activated process with a barrier of about 18 kJ mol(-1). We present a phenomenological equation for the evolution of particle size and suggest that the growth process is stochastic.

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

Diffusion and Growth of the mu Phase (Ni6Nb7) in the Ni-Nb System

Incremental diffusion couple experiments are conducted to determine the average interdiffusion coefficient and the intrinsic diffusion coefficients of the species in the Ni6Nb7 (mu phase) in the Ni-Nb system. Further, the tracer diffusion coefficients are calculated from the knowledge of thermodynamic parameters. The diffusion rate of Ni is found to be higher than that of Nb, which indicates higher defect concentration in the Ni sublattice.

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

The growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co3O4 on different substrates at a temperature as low as 450°C by low-pressure metal-organic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co3O4 films are formed on glass and Si(100) in the temperature range 350-550°C. Under similar conditions of growth, highly oriented films of Co3O4 are formed on SrTiO3(100) and LaAlO3(100). The film on LaAlO3(100) grown at 450°C show a rocking curve FWHM of 1.61°, which reduces to 1.32° when it is annealed in oxygen at 725°C. The film on SrTiO3(100) has a FWHM of 0.330 (as deposited) and 0.29° (after annealing at 725°C). The ø-scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO3(100) is comparable to the best of the pervoskite-based oxide thin films grown at significantly higher temperatures.

Growth of nanowires of beta-NaxV2O5 by metalorganic chemical vapor deposition

Films comprised of nanowires of beta-NaxV2O5 measuring 20-200 nm in diameter and 10-30 mum in length have been prepared on glass substrates by metalorganic chemical vapor deposition using the beta-diketonate complex, vanadyl acetyl acetonate, as precursor, but without the use of either templates or catalysts. Films consisting of nanowires of monophasic beta-NaxV2O5 with a preferred orientation along (h0l) are formed only at 550 degreesC, whereas those deposited at 540 degreesC comprise a mixture of nanowires (beta-NaxV2O5) and platelets (V2O5). The films deposited at lower temperatures are less crystalline and comprise a mixture of vanadium oxide phases. From the observations that nanowires are formed only in the narrow temperature range of 540-550 degreesC, and from the critical dependence of the formation of nanowires on the balance between the CVD growth rate and the evaporation rate of the film, it is inferred that the formation of nanowires of beta-NaxV2O5 is due to chemical vapor transport.

Electric Field Directed Growth of Molecular Wires of Charge Transfer Molecules on Prefabricated Metal Electrodes

Molecular wires of charge transfer molecules were formed by co-evaporating the 7 7 8 8-Tetracyanoquinodimethane [TCNQ] (acceptor) and Tetrathiafulvalene [TTF] (donor) molecules across prefabricated metal electrodes. Molecular wires of TTF TCNQ were also formed by evaporating single complex of TTF:TCNQ across prefabricated metal electrodes The prefabricated metal electrodes were made using electron beam lithography on SiO2 and glass cover slip substrates. Even though TTF: TCNQ wires grown from both co-evaporation and evaporation techniques show semiconductor like behavior in temperature dependence of resistance they show different activation energies due the difference in stoichiometry of TTF and TCNQ.