Effect of repeated restraint stress on memory in different tasks

The present study investigated the effect of repeated stress applied to female rats on memory evaluated by three behavioral tasks: two-way shuttle avoidance, inhibitory avoidance and habituation to an open field. Repeated stress had different effects on rat behavior when different tasks were considered. In the two-way active avoidance test the stressed animals presented memory of the task, but their memory scores were impaired when compared to all other groups. In the habituation to the open field, only the control group showed a significant difference in the number of rearings between training and testing sessions, which is interpreted as an adequate memory of the task. In the handled and chronically stressed animals, on the other hand, no memory was observed, suggesting that even a very mild repeated stress would be enough to alter habituation to this task. The performance in the inhibitory avoidance task presented no significant differences between groups. The findings suggest that repeated restraint stress might induce cognitive impairments that are dependent on the task and on stress intensity.

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Effects of Side-Chain and Electron Exchange Correlation on the Band Structure of Perylene Diimide Liquid Crystals: A Density Functional Study

The structural and electronic properties of perylene diimide liquid crystal PPEEB are studied using ab initio methods based on the density functional theory (I)FT). Using available experimental crystallographic data as a guide, we propose a detailed structural model for the packing of solid PPEEB. We find that due to the localized nature of the band edge wave function, theoretical approaches beyond the standard method, such as hybrid functional (PBE0), are required to correctly characterize the band structure of this material. Moreover, unlike previous assumptions, we observe the formation of hydrogen bonds between the side chains of different molecules, which leads to a dispersion of the energy levels. This result indicates that the side chains of the molecular crystal not only are responsible for its structural conformation but also can be used for tuning the electronic and optical properties of these materials.

Layer-by-Layer Assembly of Carbon Nanotubes Incorporated in Light-Addressable Potentiometric Sensors

The integration of carbon nanotubes in conjunction with a chemical or biological recognition element into a semiconductor field-effect device (FED) may lead to new (bio)chemical sensors. In this study, we present a new concept to develop field-effect-based sensors, using a light-addressable potentiometric sensor (LAPS) platform modified with layer-by-layer (LbL) films of single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers. Film growth was monitored for each layer adsorbed on the LAPS chip by Measuring current-voltage (IIV) curves. The morphology of the films was analyzed via atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), revealing the formation of a highly interconnected nanostructure of SWNTs-network into the dendrimer layers. Constant current (CC) Measurements showed that the incorporation of the PAMAM/SWNT LbL film containing LIP to 6 bilayers onto the LAPS Structure has a high pH sensitivity of ca. 58 mV/pH. The biosensing ability of the devices was tested for penicillin G via adsorptive immobilization of the enzyme penicillinase atop the LgL film. LAPS architectures modified with the LbL film exhibited higher sensitivity, ca. 100 mV/decade, in comparison to ca. 79 mV/decade for all unmodified LAPS, which demonstrates the potential application of the CNT-LbL Structure in field-effect-based (bio)chemical sensors.

Extended donor and acceptor molecules for organic electronics

Die Untersuchung von halbleitenden Materialien auf der Basis von organischen Molekülen stellt ein Gebiet der angewandten Forschung an der Schwelle zur industriellen Nutzung dar. Geringes Gewicht und hohe mechanische Flexibilität ermöglichen völlig neue Produkte, die mit anorganischen Halbleitern nicht zu realisieren sind. Die Herstellung von Bauteilen wie Transistoren, Solarzellen oder Leuchtdioden aus organischen Materialien ist ein komplexes Gebiet, das einer Vielzahl von unterschiedlichen Optimierungen bedarf, um eine konkurrenzfähige Leistung zu erreichen. Die synthetische organische Chemie bietet vielfältige Möglichkeiten, mit maßgeschneiderten Lösungen zum Optimierungsprozess beizutragen. Zum einen können neue aktive Materialien hergestellt werden mit besserer Leistung und leichterer Verarbeitbarkeit. Zum anderen sind Substanzen zugänglich, die z.B. bei der Ladungsträgerinjektion hilfreich sein können.rnIn dieser Arbeit wurde an beiden dieser Fronten gearbeitet. Dabei lag die Entwicklungsstrategie darin, ausgedehnte π-konjugierte Moleküle herzustellen, die entweder besonders elektronenarme Akzeptoren oder elektronenreiche Donoren darstellen. Die genaue Kontrolle der elektronischen Niveaus stellt einen wichtigen Bestandteil dar, um niedrige elektrische Kontaktbarrieren zu Metallen zu erreichen und ausreichend stabile Materialien zu erreichen.rnDer erste Fokus der Arbeiten lag in der Funktionalisierung von Coronen. Dieser PAH stellt einen guten Kompromiss bezüglich seiner Größe dar: Er ist groß genug, um Diffusion in andere Schichten von Bauteilen zu vermeiden, aber nicht zu groß, um Verarbeitung durch Vakuumsublimation zu ermöglichen. Bislang sind praktisch keine Coronen-Derivate in der Literatur beschrieben, weshalb eine neue Synthese entwickelt werden musste, die die Einführung starker Donor- und Akzeptorfunktionalitäten erlaubt. Die photochemische Cyclodehydrierung von substituierten [2.2.2]paracyclophan-trienen stellte sich als hervorragende Möglichkeit heraus, dies zu bewerkstelligen. Es wurde eine Reihe von methoxy-substitutierten Coronenen mit unterschiedlicher Symmetrie hergestellt. Mittels optischer Spektroskopie konnte gezeigt werden, dass Methoxygruppen wenig Einfluss auf die elektronischen Eigenschaften von Coronen haben. Unter Spaltung der Methylether und anschließender Oxidation allerdings sind Coronenketone zugänglich, welche bis zu drei α-Diketongruppen besitzen. Diese Moleküle sind enorm starke Akzeptoren, was durch Cyclovoltammetrie und Vergleich zu anderen Akzeptoren eindrucksvoll gezeigt werden konnte. Die Sublimation dieses Akzeptors auf die Oberfläche von Metallen zeigt einen dramatischen Einfluss auf die Austrittsarbeit dieses Metalls, was zur Herstellung eines ohmschen Kontakts zu organischen Halbleitern von außerordentlichem Nutzen ist. rnDen zweiten Teil der Arbeit bilden Benzodithiophen enthaltende Polymere, die für den Einsatz als aktive Komponente in elektronischen Bauteilen entwickelt wurden. Nach systematischer Strukturoptimierung wurde ein Polymer enthalten, welches in einem Feldeffekt-Transistor auf Standard-Silizium-Substraten Ladungsträger-Mobilitäten über 0,1 cm2/Vs erreicht mit großer Reproduzierbarkeit und ausgezeichneter Transistor-Charakteristik. Es konnte gezeigt werden, dass die durch die Monomergeometrie erzeugte Kurvung des Polymers zu einem optimalen Kompromiss aus Löslichkeit und effektiver Packung darstellt. Auf für industrielle Anwendungen besonders interessanten polymer-basierten Substraten wurde eine noch erheblich bessere Leistung gezeigt. Auf einem PET-Substrat wurden Feldeffekt-Mobilitäten von 0,5 cm2/Vs gemessen mit überzeugenden Reproduzierbarkeit und Stabilität.rnDamit konnte in der Arbeit ein bedeutender Beitrag zur Weiterentwicklung von Materialien für den Einsatz in elektronischen Bauteilen geleistet werden. Die Substanzen versprechen noch erhebliches Potenzial nach intensiver Optimierung und wurden deshalb zum Patent angemeldet.rn

Rashba spin precession in a magnetic field

Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for the spin field effect transistor, in which the overall perfect spin-polarized current modulation could be acquired. There is a prerequisite, however, that a strong transverse confinement potential should be imposed on the electron gas or the width of the confined quantum well must be narrow. We propose relieving this rather strict limitation by applying an external magnetic field perpendicular to the plane of the electron gas because the effect of the magnetic field on the conductance of the system is equivalent to the enhancement of the lateral confining potential. Our results show that the applied magnetic field has little effect on the spin precession length or period although in this case Rashba spin-orbit coupling could lead to a Zeeman-type spin splitting of the energy band.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Sistema de teste de transístores bipolares de junção e de efeito de campo

O estudo das curvas características de um transístor permite conhecer um conjunto de parâmetros essenciais à sua utilização tanto no domínio da amplificação de sinais como em circuitos de comutação. Deste estudo é possível obter dados em condições que muitas vezes não constam na documentação fornecida pelos fabricantes. O trabalho que aqui se apresenta consiste no desenvolvimento de um sistema que permite de forma simples, eficiente e económica obter as curvas características de um transístor (bipolar de junção, efeito de campo de junção e efeito de campo de metal-óxido semicondutor), podendo ainda ser utilizado como instrumento pedagógico na introdução ao estudo dos dispositivos semicondutores ou no projecto de amplificadores transistorizados. O sistema é constituído por uma unidade de condicionamento de sinal, uma unidade de processamento de dados (hardware) e por um programa informático que permite o processamento gráfico dos dados obtidos, isto é, traçar as curvas características do transístor. O seu princípio de funcionamento consiste na utilização de um conversor Digital-Analógico (DAC) como fonte de tensão variável, alimentando a base (TBJ) ou a porta (JFET e MOSFET) do dispositivo a testar. Um segundo conversor fornece a variação da tensão VCE ou VDS necessária à obtenção de cada uma das curvas. O controlo do processo é garantido por uma unidade de processamento local, baseada num microcontrolador da família 8051, responsável pela leitura dos valores em corrente e em tensão recorrendo a conversores Analógico-Digital (ADC). Depois de processados, os dados são transmitidos através de uma ligação USB para um computador no qual um programa procede à representação gráfica, das curvas características de saída e à determinação de outros parâmetros característicos do dispositivo semicondutor em teste. A utilização de componentes convencionais e a simplicidade construtiva do projecto tornam este sistema económico, de fácil utilização e flexível, pois permite com pequenas alterações

Overexpression of tumour-associated carbohydrate antigen sialyl-Tn in advanced bladder tumours

Little is known on the expression of the tumour-associated carbohydrate antigen sialyl-Tn (STn), in bladder cancer. We report here that 75% of the high-grade bladder tumours, presenting elevated proliferation rates and high risk of recurrence/progression expressed STn. However, it was mainly found in non-proliferative areas of the tumour, namely in cells invading the basal and muscle layers. STn was also found in tumour-adjacent mucosa, which suggests its dependence on a field effect of the tumour. Furthermore, it was not expressed by the normal urothelium, demonstrating the cancer-specific nature of this antigen. STn expression correlated with that of sialyltransferase ST6GalNAc.I, its major biosynthetic enzyme. The stable expression of ST6GalNAc.I in the bladder cancer cell line MCR induced STn expression and a concomitant increase of cell motility and invasive capability. Altogether, these results indicate for the first time a link between STn expression and malignancy in bladder cancer. Hence, therapies targeting STn may constitute new treatment approaches for these tumours.

Write-erase and read paper memory transistor

Applied Physics Letters, Vol.93, issue 20

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/ s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of 1 V.

Towards Realization of Magnetocaloric and Magnetoelectric Applications based on Bulk and Thin film forms of Sodium substituted Lanthanum Manganites

The present thesis work focuses on hole doped lanthanum manganites and their thin film forms. Hole doped lanthanum manganites with higher substitutions of sodium are seldom reported in literature. Such high sodium substituted lanthanum manganites are synthesized and a detailed investigation on their structural and magnetic properties is carried out. Magnetic nature of these materials near room temperature is investigated explicitly. Magneto caloric application potential of these materials are also investigated. After a thorough investigation of the bulk samples, thin films of the bulk counterparts are also investigated. A magnetoelectric composite with ferroelectric and ferromagnetic components is developed using pulsed laser deposition and the variation in the magnetic and electric properties are investigated. It is established that such a composite could be realized as a potential field effect device. The central theme of this thesis is also on manganites and is with the twin objectives of a material study leading to the demonstration of a device. This is taken up for investigation. Sincere efforts are made to synthesize phase pure compounds. Their structural evaluation, compositional verification and evaluation of ferroelectric and ferromagnetic properties are also taken up. Thus the focus of this investigation is related to the investigation of a magnetoelectric and magnetocaloric application potentials of doped lanthanum manganites with sodium substitution. Bulk samples of sodium substituted lanthanum manganites. Bulk samples of sodium substituted lanthanum manganites with Na substitution ranging from 50 percent to 90 percent were synthesized using a modified citrate gel method and were found to be orthorhombic in structure belonging to a pbnm spacegroup. The variation in lattice parameters and unit cell volume with sodium concentration were also dealt with. Magnetic measurements revealed that magnetization decreased with increase in sodium concentrations.

Zytogenetische Untersuchungen zur Bestimmung der chromosomalen Aneuploidie in der Karzinogenese sowie für die Frühdiagnostik des Pankreaskarzinoms

Bauchspeicheldrüsenkrebs ist die vierthäufigste Krebstodesursache in Deutschland. Durch die tiefe Lage des Organs im Körperinneren und das späte Auftreten von Symptomen erfolgt die Diagnose meist zu einem sehr späten Zeitpunkt, zu dem eine Resektion des Tumors in 80% der Fälle nicht mehr möglich ist. Die Hälfte der Patienten verstirbt bereits im ersten Jahr nach Diagnosestellung. Nach heutiger Erkenntnis entwickeln sich Adenokarzinome der Bauchspeicheldrüse über schrittweise histologische Veränderungen, die sogenannten PanIN Läsionen (pancreatic intraepithelial neoplasia). Bis heute fehlen jedoch klinisch einsetzbare Parameter für die Früherkennung des Karzinoms und seiner Vorstufen. Bisher ist nicht vollständig geklärt, welche molekularen Veränderungen hierbei eine wesentliche Rolle spielen. Das Ziel der vorliegenden Arbeit ist, die molekular- und zytogenetische Mutationsinzidenz und -Sequenz im Verlauf der neoplastischen Progression in der PanIN-Sequenz aufzuklären. Unter Anwendung der Fluoreszenz-in-situ-Hybridisierung (FISH) wird weiterführend die Frage beantwortet, ob sich der Nachweis von zytogenetischen Veränderungen in Zellen, die endoskopisch aus dem Pankreassekret gewonnen wurden, als neuartiger Ansatz für eine Frühdiagnostik nutzen lassen. Die molekulargenetischen Analysen zeigen, dass die PanIN-Läsionen aus Geweben mit chronischer Pankreatitis denen aus Geweben mit Karzinomen gleichzusetzen sind. Veränderungen in der Anzahl einzelner Chromosomen, sowie Basenmutationen finden sich bereits in den frühesten Gangläsionen. Die diffuse Verteilung von Genmutationen lässt einen mutagenen Feldeffekt vermuten, in welchem endogene (z.B. Pankreasenzyme, oxidativer Stress) und/oder exogene (z.B. Nikotin, Alkohol) Noxen auf verschiedene Pankreasgänge während einer langen Zeit einwirken. Auf der Basis der erhaltenen Daten kann angenommen werden, dass die prä-neoplastischen Läsionen in Geweben mit chronischer Pankreatitis eine Progression durchlaufen, in der sich sporadische Defekte wie Basenmutationen und Mitosefehler (Aneuplodien) akkumulieren. Die biologische Relevanz für die Tumorentstehung sollte jedoch immer im klinischen Kontext betrachtet werden. In Kombination mit weiteren Parametern (z.B. Alter, Dauer der Pankreatitis) könnte dies eine Möglichkeit bieten, das Risiko für die Entstehung eines Karzinoms individuell zu bestimmen und somit Patienten frühzeitig genug vor der Manifestation eines Tumors einer (Teil-)Resektion des Organs zuzuführen.

Immobilization of Poly(propylene imine) Dendrimer/Nickel Phtalocyanine as Nanostructured Multilayer Films To Be Used as Gate Membranes for SEGFET pH Sensors

We describe the assembly of layer-by-layer films based on the poly(propylene imine) dendrimer (PPID) generation 3 and nickel tetrasulfonated phthalocyanine (NiTsPc) for application as chemically sensitive membranes in sepal alive extended-gate field effect transistor (SEGFET) pH sensors PPID/NiTsPc films wet e adsorbed on quartz, glass. indium tin oxide. or gold (Au)-covered glass substrates Multilayer formation was monitored via UV-vis absorption upon following the increment in the Q-band intensity (615 nm) of NiTsPc The nanostructured membranes were very stable in a pH range of 4-10 and displayed a good sensitivity toward H(+), ca 30 mV/pH for PPID/N(1)TsPc films deposited on Au-covered substrates For films deposited on ITO, the sensitivity was ca 52 4 mV/pH. close to the expected theoretical value for ton-sensitive membranes. The use of chemically stable PPID/NiTsPc films as gate membranes in SEGFETs, as introduced here, may represent an alternative for the fabrication of nanostructured, porous platforms for enzyme immobilization to be used in enzymatic biosensors.

Energy transfer and frequency upconversion in Yb3+-Er3+-doped PbO-GeO2 glass containing silver nanoparticles

We report the infrared-to-visible frequency upconversion in Er3+-Yb3+-codoped PbO-GeO2 glass containing silver nanoparticles (NPs). The optical excitation is made with a laser at 980 nm in resonance with the F-2(5/2)-> F-2(7/2) transition of Yb3+ ions. Intense emission bands centered at 525, 550, and 662 nm were observed corresponding to Er3+ transitions. The simultaneous influence of the Yb3+-> Er3+ energy transfer and the contribution of the intensified local field effect due to the silver NPs give origin to the enhancement of the whole frequency upconversion spectra.