Spin-reorientation and weak ferromagnetism in antiferromagnetic TbMn0.5Fe0.5O3

Orthorhombic single crystals of TbMn0.5Fe0.5O3 are found to exhibit spin-reorientation, magnetization reversal, and weak ferromagnetism. Strong anisotropy effects are evident in the temperature dependent magnetization measurements along the three crystallographic axes a, b, and c. A broad magnetic transition is visible at T-N(Fe/Mn) = 286K due to paramagnetic to A(x)G(y)C(z) ordering. A sharp transition is observed at T-SR(Fe/Mn) = 28 K, which is pronounced along c axis in the form of a sharp jump in magnetization where the spins reorient to G(x)A(y)F(z) configuration. The negative magnetization observed below T-SR(Fe/Mn) along c axis is explained in terms of domain wall pinning. A component of weak ferromagnetism is observed in field-scans along c-axis but below 28 K. Field-induced steps-like transitions are observed in hysteresis measurement along b axis below 28 K. It is noted that no sign of Tb-order is discernible down to 2K. TbMn0.5Fe0.5O3 could be highlighted as a potential candidate to evaluate its magneto-dielectric effects across the magnetic transitions. (C) 2015 AIP Publishing LLC.

Enhancement Mechanism of Fluorescence Intensity in Presence of Plasmonic Nanoparticles

The emission intensity of fluorophore molecule may change in presence of strong plasmon field induced by nanoparticles. The enhancement intensity is optimized through selective clustering or functionalization of nanoparticles in closed vicinity of fluorophore. Our study is aimed at understanding the enhancement mechanism of fluorescence intensity in presence of gold nanoparticles to utilize it in molecular sensing and in situ imaging in the microfluidic lab-on-chip device. Related phenomena are studied in situ in a microfluidic channel via fluorescence imaging. Detailed analysis is carried out to understand the possible mechanism of enhancement of fluorescence due to nanoparticles. In the present experimental study we show that SYTO9 fluorescence intensity increased in presence of Au nanoparticles of similar to 20 nm diameter. The fluorescence intensity is 20 time more compared to that in absence of Au nanoparticles. The enhancement of fluorescence intensity is attributed to the plasmonic resonance of Au nanoparticle at around the fluorescence emission wavelength. Underlying fundamental mechanism via dipole interaction model is explored for quantitative correlation of plasmonic enhancement properties.

Anomalous reduction in domain wall displacement at the morphotropic phase boundary of the piezoelectric alloy system PbTiO3-BiScO3

A comparative study of field-induced domain switching and lattice strain was carried out by in situ electric-field-dependent high-energy synchrotron x-ray diffraction on a morphotropic phase boundary (MPB) and a near-MPB rhombohedral/pseudomonoclinic composition of a high-performance piezoelectric alloy (1-x) PbTiO3-(x)BiScO3. It is demonstrated that the MPB composition showing large d(33) similar to 425 pC/N exhibits significantly reduced propensity of field-induced domain switching as compared to the non-MPB rhombohedral composition (d(33) similar to 260 pC/N). These experimental observations contradict the basic premise of the martensitic-theory-based explanation which emphasizes on enhanced domain wall motion as the primary factor for the anomalous piezoelectric response in MPB piezoelectrics. Our results favor field-induced structural transformation to be the primary mechanism contributing to the large piezoresponse of the critical MPB composition of this system.

Structure, chemistry, and energetics of organic and inorganic adsorbates on Ga-rich GaAs and GaP(001) surfaces

The work described in this dissertation includes fundamental investigations into three surface processes, namely inorganic film growth, water-induced oxidation, and organic functionalization/passivation, on the GaP and GaAs(001) surfaces. The techniques used to carry out this work include scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. Atomic structure, electronic structure, reaction mechanisms, and energetics related to these surface processes are discussed at atomic or molecular levels.

First, we investigate epitaxial Zn₃P₂ films grown on the Ga-rich GaAs(001)(6×6) surface. The film growth mechanism, electronic properties, and atomic structure of the Zn₃P₂/GaAs(001) system are discussed based on experimental and theoretical observations. We discover that a P-rich amorphous layer covers the crystalline Zn3P2 film during and after growth. We also propose more accurate picture of the GaP interfacial layer between Zn₃P₂ and GaAs, based on the atomic structure, chemical bonding, band diagram, and P-replacement energetics, than was previously anticipated.

Second, DFT calculations are carried out in order to understand water-induced oxidation mechanisms on the Ga-rich GaP(001)(2×4) surface. Structural and energetic information of every step in the gaseous water-induced GaP oxidation reactions are elucidated at the atomic level in great detail. We explore all reasonable ground states involved in most of the possible adsorption and decomposition pathways. We also investigate structures and energies of the transition states in the first hydrogen dissociation of a water molecule on the (2×4) surface.

Finally, adsorption structures and thermal decomposition reactions of 1-propanethiol on the Ga-rich GaP(001)(2×4) surface are investigated using high resolution STM, XPS, and DFT simulations. We elucidate adsorption locations and their associated atomic structures of a single 1-propanethiol molecule on the (2×4) surface as a function of annealing temperature. DFT calculations are carried out to optimize ground state structures and search transition states. XPS is used to investigate variations of the chemical bonding nature and coverage of the adsorbate species.

Giant diamagnetism of gold nanorods

The presence of giant diamagnetism in Au nanorods, NRs, is shown to be a possible consequence of field induced currents in the surface electrons. The distance, Delta , between quantum surface energy levels has been calculated as a function of the NRs radius. Note that those electrons occupying states for which Delta > k(B)T are steadily orbiting with constant orbital moment. The diamagnetic response induced when a field is turned on remains constant during the time the field is acting. As the NRs radius increases, Delta decreases and accordingly the electron fraction available to generate constant currents decreases, consequently the surface diamagnetic susceptibility decreases towards its bulk value. The surface electronic motion induced by the axial applied field on electrons confined into a cylindrical surface accounts with extremely good quantitative agreement for the giant diamagnetism recently measured and reported.

Influência da reorientação de spin nas propriedades termomagnéticas dos compostos da série Ho1-yGdyAl2

Neste trabalho foram estudadas as propriedades estruturais e termomagnéticas dos pseudobinários Ho1-yGdyAl2, através de abordagens experimentais e teóricas. A parte experimental envolveu a preparação de cinco amostras, com as concentrações y = 0, 0,25, 0,5, 0,75 e 1, assim como medidas de magnetização, calor especifico e da variação adiabática da temperatura. Na parte teórica usamos um hamiltoniano modelo que leva em consideração a interação dos íons com o campo magnético aplicado, com o campo elétrico cristalino e a troca entre os íons magnéticos. A entropia da rede foi considerada na aproximação de Debye e a entropia eletrônica na aproximação do gás de elétrons livres. A influência das reorientações de spin, espontâneas e induzidas pelo campo magnético, na magnetização e no calor especifico foram investigadas sistematicamente tanto a partir de dados experimentais quanto teoricamente. Também obtemos resultados teóricos para a variação de entropia e variação adiabática da temperatura alterando a intensidade ou a direção do campo magnético.

Random lasing in a bistable smectic A liquid crystal

In this work, we examine the phenomenon of random lasing from the smectic A liquid crystal phase. We summarise our results to date on random lasing from the smectic A phase including the ability to control the output from the sample using applied electric fields. In addition, diffuse random lasing is demonstrated from the electrohydrodynamic instabilities of a smectic A liquid crystal phase that has been doped with a low concentration of ionic impurities. Using a siloxane-based liquid crystal doped with ionic impurities and a laser dye, nonresonant random laser emission is observed from the highly scattering texture of the smectic A phase which is stable in zero-field. With the application of a low frequency alternating current electric field, turbulence is induced due to motion of the ions. This is accompanied by a decrease in the emission linewidth and an increase in the intensity of the laser emission. The benefit in this case is that a field is not required to maintain the texture as the scattering and homeotropic states are both stable in zero field. This offers a lower power consumption alternative to the electric-field induced static scattering sample.

Effects of parylene-C photooxidation on serum-assisted glial and neuronal patterning.

The increasing use of patterned neural networks in multielectrode arrays and similar devices drives the constant development and evaluation of new biomaterials. Recently, we presented a promising technique to guide neurons and glia reliably and effectively. Parylene-C, a common hydrophobic polymer, was photolithographically patterned on silicon oxide (SiO(2)) and subsequently activated via immersion in serum. In this article, we explore the effects of ultraviolet (UV)-induced oxidation on parylene's ability to pattern neurons and glia. We exposed parylene-C stripe patterns to increasing levels of UV radiation and found a dose-dependent reduction in the total mass of patterned cells, as well as a gradual loss of glial and neuronal conformity to the patterns. In contrast, nonirradiated patterns had superior patterning results and increased presence of cells. The reduced cell adhesion and patterning after the formation of aldehyde and carboxyl groups on UV-radiated parylene-C supports our hypothesis that cell adhesion and growth on parylene is facilitated by hydrophobic adsorption of serum proteins. We conclude that unlike other cell patterning schemes, our technique does not rely on photooxidation of the polymer. Nonetheless, the precise control of oxygenated groups on parylene could pave the way for the differential binding of proteins and other molecules on the surface, aiding in the adhesion of alternative cell types. (c) 2010 Wiley Periodicals, Inc. J Biomed Mater Res, 2010.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼105, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 104 s. © 2014 AIP Publishing LLC.

Growth of Ge quantum dot mediated by boron on Ge wetting layer

We, report on the influence of boron on the formation of Ge quantum dots. The investigated structure consists of a Ge wetting layer, on which a sub-monolayer boron is deposited and subsequently a Ge top layer. For sufficiently thin Ge top layers, the strain field induced by boron on Ge wetting layer destabilizes the Ge top layer and causes the formation of small Ge quantum dots. However, for thicker Ge top layers, boron on the Ge wetting layer diffuses into Ge layers, compensates partly the strain and delays the evolution of Ge quantum dots. By this method, small Ge quantum dots with high density as well as size uniformity can be formed by optimizing the growth condition. (c) 2005 Elsevier B.V. All rights reserved.

Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates

Magnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (< 1 T), but the peak energy is almost unchanged. There is a crossover of the photoluminescence intensities between interband and bound excitonic transitions as the magnetic field is increased to about 1 T. These behaviors are interpreted by the strong tuning of the local alloy disorder potential by the applied magnetic field. In addition, the magnetic field-induced suppression of the energy transfers from excitons to Mn2+ ions is also observed.

Collective and single-particle excitations in coupled quantum wires in magnetic fields

The full spectra of magnetoplasmons and single-particle excitations are obtained of coupled one-dimensional electron gases in parallel semiconductor quantum wires with tunneling. We show the effects of the interwire Coulomb interaction and the tunneling, as well as the magnetic-field-induced localization on the elementary excitations in symmetric and asymmetric coulped quantum wire structures. The interacton and resonance between the plasmon and the intersubband single-particle excitations are found in magnetic fields.

Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs

Fourier transformation (FT) has been used in the theoretical line shape analysis of Franz-Keldysh oscillations (FKOs) in detail by numerical simulations. FKOs from the surface-intrinsic-n(+) GaAs structure were obtained in photoreflectance (PR) measurements with various modulation light intensities and with different strengths of bias light illumination, which were used to change the static electric field in the intrinsic layer of the sample. The FT spectra of the PR spectra, including the real part, imaginary part, and the modulus, were very consistent with the theoretical line shapes. The ratio of the square root of the reduced mass (root mu (L)/root mu (H)) and the ratio of transition strength of the electron heavy hole to the electron light hole were obtained from the PT spectra. In addition, the electric field in the intrinsic layer of the sample without and with bias illumination and the modulation field induced by photomodulation were also obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)02123-X].

Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.

Excitonic optical absorption in semiconductors under intense terahertz radiation

The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz (THz) radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.