Propriedades eletrônicas e estruturais do PbTiO3: teoria do funcional de densidade aplicada a modelos periódicos

Calculations based on density functional theory at the B3LYP hybrid functional level applied to periodic models have been performed to characterize the structural and electronic properties of PbTiO3. Two different slab terminations (PbO and TiO2) have been considered to obtain and discuss the results of band structure, density of states, charge distribution on bulk and surface relaxation. It is observed that the relaxation processes are most prominent for the Ti and Pb surface atoms. The electron density maps confirm the partial covalent character of the Ti-O bonds. The calculated optical band gap and other results are in agreement with experimental data.

Preparação de eletrodos opticamente transparentes

A simple experiment for the preparation of transparent conducting glass electrodes by deposition of pure and fluorine doped SnO2 films is described. This procedure was tested in the undergraduate inorganic course at IQ-UNICAMP. The success in achieving a conducting layer was easily checked using the standard probes of a volt-ohm meter. The optical transmittance and thickness were studied by UV-vis spectrophotometry. To discuss the experimental results we place significant emphasis on molecular orbital and energy band model theories. The undergraduate students can also discuss the concepts related to the electronic properties of solids and to interesting new materials, such as transparent conducting films, which are the subject of significant current research and technological applications.

Comparação entre métodos compostos no cálculo de afinidades por próton e elétron em sistemas moleculares

The CBS-4M, CBS-QB3, G2, G2(MP2), G3 and G3(MP2) model chemistry methods have been used to calculate proton and electron affinities for a set of molecular and atomic systems. Agreement with the experimental value for these electronic properties is quite good considering the uncertainty in the experimental data. A comparison among the six theories using statistical analysis (average value, standard deviation and root-mean-square) showed a better performance of CBS-QB3 to obtain these properties.

Propriedades eletrônicas, estruturais e constantes elásticas do ZnO

The electronic, structural properties and elastic constants of the wurtzite phase of zinc oxide, ZnO, was investigated using computer simulation at Density Functional Theory level, with B3LYP hybrid functional and Hartree-Fock methodology. The electronic properties as well the band energy was investigated through the analysis of the band structures and density of states (DOS), and the mechanical properties was studied through the calculus of the elastic constants C11, C33, C44, C12 e C13. The results are in good agreement with experimental data found in the literature and in accordance with results obtained by another theoretical methodology.

Generación de estados superficiales durante la formación electroforética catódica de películas de TiO2 sobre ito

In the present work TiO2 films were formed over Indium Tin Oxide (ITO) employing cathodic electrophoretic deposition (Cathodic-EPD) and Dr. Blade Technique. The films were characterized by electrochemical techniques in order to compare their electronic properties; as well as, their photoelectrochemical behavior. The electrochemical performance showed by the films, allowed to relate the modification occurring during the Cathodic-EPD, with the partial reduction of TiO2 nanoparticles, generating Ti3+ defects. These trapping states are modifying the electronic properties of the film, and diminishing the transport of the photoelectrogenerated electrons toward ITO.

Propriedades estruturais e eletrônicas de nanofilmes de TiO2 anatase: cálculos B3LYP-D* em sistemas periódicos bidimensionais

Structural and electronic properties of titanium dioxide (TiO2) thin films, in anatase phase, were investigated using periodic 2D calculations at density functional theory (DFT) level with B3LYP hybrid functional. The Grimme dispersion correction (DFT/B3LYP-D*) was included to better reproduce structural features. The electronic properties were discussed based on the band gap energy, and proved dependent on surface termination. Surface energies ranged from 0.80 to 2.07 J/m², with the stability orders: (101) > (100) > (112) > (110) ~ (103) > (001) >> (111), and crystal shape by Wulff construction in accordance with experimental data.

COMPARAÇÃO ENTRE FUNCIONAIS DE DENSIDADE NO ESTUDO DE PROPRIEDADES ELETRÔNICAS DE DERIVADOS DA ARTEMISININA

The present paper demonstrates the application of functional GGA hybrids, with long-range corrections, for the calculation of the electronic properties of artemisinin and two of its derivatives - artemether e artesunate. Due to the relatively large amount of data obtained, the statistical method of Principal Component Analysis was employed. The functionals of the WB97 family are observed to be the most appropriate for the determining of reactivity indexes, which are the principal descriptors that, probably, are associated with the antimalarial and anticancer properties of this group of molecules. In addition, it was also observed that all the functionals obtained satisfactorily describe the geometric properties of the studied.

Spectroscopic analysis of C80 doping with group III and group V elements using semiempirical PM3 molecular modelling technique

Semiempirical calculations at the level of PM3 of theory were carried out to study the structural and electronic properties of C80 and some of its doped derivatives with the elements of group III and V at the level of PM3 of theory. We have selected these elements to be substituted in the fullerene-C80 cage in order to show the effect of such structural change on the electronic properties of the molecules studied. The theoretical IR spectra, some of physical and chemical properties of the molecules studied are obtained and discussed.

Development of racemization catalysts for dynamic kinetic resolution

Preparation of optically active compounds is of high importance in modern medicinal chemistry. Despite recent advances in the field of asymmetric synthesis, resolution of racemates still remains the most utilized way for preparation of single enantiomers in industrial scale due to its cost-efficiency and simplicity. Enzymatic kinetic resolution (KR) of racemates is a classical method for separation of enantiomers. One of its drawbacks is the limitation of target enantiomer yield to 50%. Dynamic Kinetic Resolution (DKR) allows to reach yields up to 100% by in situ racemization of the less reactive enantiomer. In the first part of this thesis, a number of half-sandwich ruthenium complexes were prepared and evaluated as catalysts for racemization of optically active secondary alcohols. A leading catalyst, Bn5CpRu(CO)2Cl, was identified. The catalyst discovered was extensively characterized by its application for DKR of a broad range of secondary alcohols in a wide range of reaction loadings (1 mmol – 1 mol). Cost-efficient chromatography-free procedure for preparation of this catalyst was developed. Further, detailed kinetic and mechanistic studies of the racemization reactions were performed. Comparison of racemization rates in the presence of Bn5CpRu(CO)2Cl and Ph5CpRu(CO)2Cl catalysts reveals that the performance of the catalytic system can be adjusted by matching of the electronic properties of the catalysts and the substrates. Moreover, dependence of the rate-limiting step from the electronic properties of the reagents was observed. Important conclusions about reaction mechanism were made. Finally, an alternative approach to DKR of amines based on space separated vessels was addressed. This procedure allows the combination of thermolabile enzyme with racemization catalysts active only at high temperatures.

Research and development of III-V semiconductor surfaces for improved device interfaces

This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

Biotransformation of polycylic aromatic compounds by fungi and an investigation into the oxidation of alkylbenzenes by Mortierella isabellina NRRL 1757

Incubations of several polycyclic heteroaromatic compounds and two polycyclic aromatic hydrocarbons with a series of common fungi have been performed. The fungi Cunninghamella elegans ATCC 26269, Rhizopus arrhizus ATCC 11145, and Mortierella isabellina NRRL 1757 were studied in this regard. Of the aza heteroaromatics, only dibenzopyrrole gave a ring hydroxylated product following the incubation with C. elegans. From the thio heteroaromatics studied, dibenzothiophene was metabolized by all the three fungi and thioxanthone by C. elegans and M. isabellina giving sulfones and sulphoxides. Thiochromanone was metabolized stereoselectively to the corresponding sulphoxide by C. elegans. Methyl substituted thioxanthones on incubation with C. elegans produced oxidative products, arising from S -oxidation and hydroxylation at the methyl group. Of the cyclic ketones studied, only fluorenone was reduced to hydroxyfluorene and this metabolism is compared with that reported with cytochrome P-450 monooxygenases of hepatic microsomes. A series of para-substituted ethylbenzenes has been transformed stereoselectively to the 1-phenylethanols by incubation with M. isabellina. Comparisons of the enantiomeric purities obtained from products with their respective para substituent of the same steric size but different electronic properties indicate that the stereoselectivity of hydroxylation at benzylic carbon may be susceptible to electron donating or withdrawing factors in some cases, but that observation is not va lid in all the comparisons. The stereochemistry of the reaction is discussed in terms of three possible steps, ethylbenzene ---) 1-phenylethanol ---) acetophenone ---) 1-phenylethanol. This metabolic pathway could account for the inconsistencies observed in the comparisons of optical purities and electronic character of para substituents. Furthermore, formation of 2-phenylethanol (in some cases), l-(p-acetylphenyl)ethanol from p-diethylbenzene, and N-acetylation of p-ethylaniline was observed. n-Propylbenzene was also converted to optically active 1-phenylpropanol. Acetophenone, p-ethylacetophenone, and o(,~,~-trifluoroacetophenone were transformed to 1-phenylethanol, l-(p-ethylphenyl)ethanol, and 1-phenyl-2,2,2-trifluoroethanol, respectively, with high chemical and excellent optical yields. The 13 C NMR spectra of several substrates and metabolic products have been reported and assigned for the first time.

Etude théorique des propriétés électroniques et optiques des super-réseaux de Si/SiO2

FRANCAIS: L'observation d'une intense luminescence dans les super-réseaux de Si/SiO2 a ouvert de nouvelles avenues en recherche théorique des matériaux à base de silicium, pour des applications éventuelles en optoélectronique. Le silicium dans sa phase cristalline possède un gap indirect, le rendant ainsi moins intéressant vis-à-vis d'autres matériaux luminescents. Concevoir des matériaux luminescents à base de silicium ouvrira donc la voie sur de multiples applications. Ce travail fait état de trois contributions au domaine. Premièrement, différents modèles de super-réseaux de Si/SiO2 ont été conçus et étudiés à l'aide de calculs ab initio afin d'en évaluer les propriétés structurales, électroniques et optiques. Les deux premiers modèles dérivés des structures cristallines du silicium et du dioxyde de silicium ont permis de démontrer l'importance du rôle de l'interface Si/SiO2 sur les propriétés optiques. De nouveaux modèles structurellement relaxés ont alors été construits afin de mieux caractériser les interfaces et ainsi mieux évaluer la portée du confinement sur les propriétés optiques. Deuxièmement, un gap direct dans les modèles structurellement relaxés a été obtenu. Le calcul de l'absorption (par l'application de la règle d'or de Fermi) a permis de confirmer que les propriétés d'absorption (et d'émission) du silicium cristallin sont améliorées lorsque celui-ci est confiné par le SiO2. Un décalage vers le bleu avec accroissement du confinement a aussi été observé. Une étude détaillée du rôle des atomes sous-oxydés aux interfaces a de plus été menée. Ces atomes ont le double effet d'accroître légèrement le gap d'énergie et d'aplanir la structure électronique près du niveau de Fermi. Troisièmement, une application directe de la théorique des transitions de Slater, une approche issue de la théorie de la fonctionnelle de la densité pour des ensembles, a été déterminée pour le silicium cristallin puis comparée aux mesures d'absorption par rayons X. Une très bonne correspondance entre cette théorie et l'expérience est observée. Ces calculs ont été appliqués aux super-réseaux afin d'estimer et caractériser leurs propriétés électroniques dans la zone de confinement, dans les bandes de conduction.

Étude, par principes premiers, des effets de la corrélation entre électrons sur les propriétés électroniques et magnétiques de polymères pontés et de supraconducteurs à haute température critique

La présente thèse traite de la description de systèmes complexes, notamment des polymères et des cuprates, par la théorie de la fonctionnelle de la densité. En premier lieu, la théorie de la fonctionnelle de la densité ainsi que différentes fonctionnelles utilisées pour simuler les matériaux à l’étude sont présentées. Plus spécifiquement, les fonctionnelles LDA et GGA sont décrites et leurs limites sont exposées. De plus, le modèle de Hubbard ainsi que la fonctionnelle LDA+U qui en découle sont abordés dans ce chapitre afin de permettre la simulation des propriétés de matériaux à forte corrélation électronique. Par la suite, les résultats obtenus sur les polymères sont résumés par deux articles. Le premier traite de la variation de la bande interdite entre les polymères pontés et leurs homologues non pontés. Le second se penche sur l’étude de polymères à faible largeur de bande interdite. Dans ce dernier, il sera démontré qu’une fonctionnelle hybride, contenant de l’échange exact, est nécessaire afin de décrire les propriétés électroniques des systèmes à l’étude. Finalement, le dernier chapitre est consacré à l’étude des cuprates supraconducteurs. La LDA+U pouvant rendre compte de la forte localisation dans les orbitales 3d des atomes de cuivre, une étude de l’impact de cette fonctionnelle sur les propriétés électroniques est effectuée. Un dernier article investiguant différents ordres magnétiques dans le La2CuO4 dopé termine le dernier chapitre. On trouve aussi, en annexe, un complément d’information pour le second article et une description de la théorie de la supraconductivité de Bardeen, Cooper et Schrieffer.

Étude par dynamique moléculaire de l'ablation par impulsions laser ultrabrèves de cibles nanocristallines

L’ablation de cibles d’Al nanocristallines (taille moyenne des cristallites d = 3,1 et 6,2 nm) par impulsions laser ultrabrèves (200 fs) a été étudiée par l’entremise de si- mulations combinant la dynamique moléculaire et le modèle à deux températures (two- temperature model, TTM) pour des fluences absorbées allant de 100 à 1300 J/m2. Nos simulations emploient un potentiel d’interaction de type EAM et les propriétés électro- niques des cibles en lien avec le TTM sont représentées par un modèle réaliste possédant une forme distincte dans le solide monocristallin, le solide nanocristallin et le liquide. Nous avons considéré l’effet de la taille moyenne des cristallites de même que celui de la porosité et nous avons procédé à une comparaison directe avec des cibles mono- cristallines. Nous avons pu montrer que le seuil d’ablation des métaux nanocristallins est significativement plus bas, se situant à 400 J/m2 plutôt qu’à 600 J/m2 dans le cas des cibles monocristallines, l’écart étant principalement dû à l’onde mécanique plus im- portante présente lors de l’ablation. Leur seuil de spallation de la face arrière est aussi significativement plus bas de par la résistance à la tension plus faible (5,40 GPa contre 7,24 GPa) des cibles nanocristallines. Il est aussi apparu que les contraintes résiduelles accompagnant généralement l’ablation laser sont absentes lors de l’ablation de cibles d’aluminium nanocristallines puisque la croissance cristalline leur permet d’abaisser leur volume spécifique. Nos résultats indiquent aussi que le seuil de fusion des cibles nano- cristallines est réduit de façon marquée dans ces cibles ce qui s’explique par la plus faible énergie de cohésion inhérente à ces matériaux. Nos simulations permettent de montrer que les propriétés structurelles et électroniques propres aux métaux nanocristallins ont toutes deux un impact important sur l’ablation.

Étude ab initio des propriétés électroniques de polymères conjugués et de cristaux moléculaires

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal