Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.

Luminescence properties of Er3+ - Doped SiOx films containing amorphous Si nanoparticles

PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.

Low Threshold Stretched-pulses Mode-locked Er3+-doped Fiber Laser with Ring Cavity

National Natural Science Foundationa of China(602537060，60408002)

掺Er3+玻璃上转换发光特性研究

采用高温熔制工艺制备了掺Er3+硅酸盐玻璃，应用Judd-Ofelt 理论计算了Er3+光谱参数， 发现玻璃中含有0.15 mol%Er2O3 时各参数取得最大值；分析了玻璃的吸收光谱随Er3+离子浓度的变 化关系；上转换光谱分析表明在522 nm、544 nm、658 nm 处有较强的绿光和红光，分别对应于 2H11/2→4I15/2、4 S3/2→4I15/2、4 F9/2→4I15/2 的跃迁，且522 nm 绿光强度和658nm 红光强度要远大于544 nm 绿光强度. 分析了上转换发光强度随泵浦功率和Er3+离子浓度的变化关系，揭示了上转换发光机制 主要是激发态吸收和能量转换，且均为双光子吸收过程.

EDWA基质玻璃中Er3+的光谱参数计算

对制备的不同掺杂Er¨浓度的硅酸盐玻璃，测定了吸收光谱和荧光光谱．根据玻璃的光 谱特性计算了玻璃吸收面积并确定出体系的最佳掺杂Er，0 浓度为0．2左右．根据Judd—Ofelt理 论拟合出光谱强度参数 (A=2，4，6)；结果分析表明：随着Er¨ 离子浓度的增加，光谱强度参数 在增大， 在减小，说明玻璃的共价性能增强，E卜0共价性增强