146 resultados para Cathodoluminescence
Resumo:
The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap materials, aiming at fabricating new optoelectronic devices such as solar-blind UV photodetectors, high power electronics, and gas sensors. Photocurrent spectroscopy and DC photocurrent time evolution were used to investigate the performance of prototypes under different atmospheres, temperatures and excitation wavelengths (or dark conditions). Cathodoluminescence, absorption spectroscopy, XRD and SEM were used to assess structural, morphologic, electrical and optical properties of materials. This thesis is divided into two main sections, each describing the work done on a different metal-oxide semiconductor. 1) MOVPE-grown Ga2O3 thin films for UV solar-blind photodetectors and high power devices The semiconducting oxides, among them Ga2O3, have been employed for several decades as transparent conducting oxide (TCO) electrodes for fabrication of solar cells, displays, electronic, and opto-electronic devices. The interest was mainly confined to such applications, as these materials tend to grow intrinsically n-type, and attempts to get an effective p-type doping has consistently failed. The key requirements of TCO electrodes are indeed high electrical conductivity and good transparency, while crystallographic perfection is a minor issue. Furthermore, for a long period no high-quality substrates and epi-layers were available, which in turn impeded the development of a truly full-oxide electronics. Recently, Ga2O3 has attracted renewed interest, as large single crystals and high-quality homo- and hetero-epitaxial layers became available, which paved the way to novel application areas. Our research group spent the last two years in developing a low temperature (500-700°C) MOVPE growth procedure to obtain thin films of Ga2O3 on different substrates (Dept. of Physics and IMEM-CNR at UNIPR). We obtained a significant result growing on oriented sapphire epitaxial films of high crystalline, undoped, pure phase -Ga2O3 (hexagonal). The crystallographic properties of this phase were investigated by XRD, in order to clarify the lattice parameters of the hexagonal cell. First design and development of solar blind UV photodetectors based on -phase was carried out and the optoelectronic performance is evaluated by means of photocurrent spectroscopy. The UV-response is adequately fast and reliable to render this unusual phase a subject of great interest for future applications. The availability of a hexagonal phase of Ga2O3 stable up to 700°C, belonging to the same space group of gallium nitride, with high crystallinity and tunable electrical properties, is intriguing in view of the development of nitride-based devices, by taking advantage of the more favorable symmetry and epitaxial relationships with respect to the monoclinic β-phase. In addition, annealing at temperatures higher than 700°C demonstrate that the hexagonal phase converts totally in the monoclinic one. 2) ZnO nano-tetrapods: charge transport mechanisms and time-response in optoelectronic devices and sensors Size and morphology of ZnO at the nanometer scale play a key role in tailoring its physical and chemical properties. Thanks to the possibility of growing zinc oxide in a variety of different nanostructures, there is a great variety of applications, among which gas sensors, light emitting diodes, transparent conducting oxides, solar cells. Even if the operation of ZnO nanostructure-based devices has been recently demonstrated, the mechanisms of charge transport in these assembly is still under debate. The candidate performed an accurate investigation by photocurrent spectroscopy and DC-photocurrent time evolution of electrical response of both single-tetrapod and tetrapod-assembly devices. During the research done for this thesis, a thermal activation energy enables the performance of samples at high temperatures (above about 300°C). The energy barrier is related to the leg-to-leg interconnection in the assembly of nanotetrapods. Percolation mechanisms are responsible for both the very slow photo-response (minutes to hours or days) and the significant persistent photocurrent. Below the bandgap energy, electronic states were investigated but their contribution to the photocurrent are two-three order of magnitude lower than the band edge. Such devices are suitable for employ in photodetectors as well as in gas sensors, provided that the mechanism by which the photo-current is generated and gas adsorption on the surface modify the conductivity of the material are known.
Resumo:
Understanding flow path connectivity within a geothermal reservoir is a critical component for efficiently producing sustained flow rates of hot fluids from the subsurface. I present a new approach for characterizing subsurface fracture connectivity that combines petrographic and cold cathodoluminescence (CL) microscopy with stable isotope analysis (δ18O and δ13C) and clumped isotope (Δ47) thermometry of fracture-filling calcite cements from a geothermal reservoir in northern Nevada. Calcite cement samples were derived from both drill cuttings and core samples taken at various depths from wells within the geothermal field. CL microscopy of some fracture filling cements shows banding parallel to the fracture walls as well as brecciation, indicating that the cements are related to fracture opening and fault slip. Variations in trace element composition indicated by the luminescence patterns reflect variations in the composition and source of fluids moving through the fractures as they opened episodically. Calcite δ13C and δ18O results also show significant variation among the sampled cements, reflecting multiple generations of fluids and fracture connectivity. Clumped isotope analyses performed on a subset of the cements analyzed for conventional δ18O and δ13C mostly show calcite growth temperatures around 150°C—above the current ambient rock temperature, which indicates a common temperature trend for the geothermal reservoir. However, calcite cements sampled along faults located within the well field showed both cold (18.7°C) and hot (226.1°C) temperatures. The anomalously cool temperature found along the fault, using estimates from clumped isotope thermometry, suggests a possible connection to surface waters for the geothermal source fluids for this system. This information may indicate that some of the faults within the well field are transporting meteoric water from the surface to be heated at depth, which then is circulated through a complex network of fractures and other faults.
Resumo:
A granodiorite from Akilia, southwest Greenland, previously suggested to date putative life-bearing rocks to greater than or equal to3.84 Ga, is re-investigated using whole-rock major and trace-element geochemistry, and detailed cathodoluminescence image-guided secondary ion mass spectrometer analyses of zircon U-Th-Pb and rare earth elements. Complex zircon internal structure reveals three episodes of zircon growth and/or recrystallization dated to c. 3.84 Ga, 3.62 Ga and 2.71 Ga. Rare earth element abundances imply a significant role for garnet in zircon generation at 3.62 Ga and 2.71 Ga. The 3.62 Ga event is interpreted as partial melting of a c. 3.84 Ga grey gneiss precursor at granulite facies with residual garnet. Migration of this 3.62 Ga magma (or melt-crystal mush) away from the melt source places a maximum age limit on any intrusive relationship. These early Archaean relationships have been complicated further by isotopic reworking in the 2.71 Ga event, which could have included a further episode of partial melting. This study highlights a general problem associated with dating thin gneissic veins in polyphase metamorphic terranes, where field relationships may be ambiguous and zircon inheritance can be expected.
Resumo:
The fossil arthropod Class Trilobita is characterised by the possession of a highly mineralised dorsal exoskeleton with an incurved marginal flange (doublure). This cuticle is usually the only part of the organism to be preserved. Despite the common occurrence of trilobites in Palaeozoic sediments, the original exoskeletal mineralogy has not been determined previously. Petrographic data involving over seventy trilobite species, ranging in age from Cambrian to Devonian, together with atomic absorption and stable isotope analyses, indicate a primary low-magnesian calcite composition. Trilobite cuticles exhibit a variety of preservational textures which are related to the different diagenetic realms through which they have passed. A greater knowledge of post-depositional processes and the specific features they produce, has enabled post-mortem artefacts to be distinguished from primary cuticular microstructures. Alterations of the cuticle can either enhance or destroy primary features, and their effects are best observed in thin-sections, both under transmitted light and cathodoluminescence. Well-preserved trilobites often retain primary microstructures such as laminations, canals, and tubercles. These have been examined in stained thin-sections and by scanning electron microscopy, from as wide a range of trilobites as possible. Construction of sensory field maps has shown that although the basic organisation of the exoskeleton is the same in all trilobites, the types of microstructures found, and their distribution is species-specific. The composition, microstructure, and architecture of the trilobite exoskeleton have also been studied from a biomechanical viewpoint. Total cuticle thickness, and the relative proportions of the different layers, together with the overall architecture all affected the mechanical properties of the exoskeleton.
Resumo:
A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga_2O_3, GeO_2 or Sb_2O_3, among others, and some ternary oxide compounds (ZnGa_2O_4, Zn_2GeO_4). In order to tailor physical properties, a successful doping of these nanostructures is required. However, for nanostructured materials, doping may affect not only their physical properties, but also their morphology during the thermal growth process. In this paper, we will show some examples of how the addition of impurities may result into the formation of complex structures, or changes in the structural phase of the material. In particular, we will consider the addition of Sn and Cr impurities into the precursors used to grow Ga_2O_3, Zn_2GeO_4 and Sb_2O_3 nanowires, nanorods or complex nanostructures, such as crossing wires or hierarchical structures. Structural and optical properties were assessed by electron microscopy (SEM and TEM), confocal microscopy, spatially resolved cathodoluminescence (CL), photoluminescence, and Raman spectroscopies. The growth mechanisms, the luminescence bands and the optical confinement in the obtained oxide nanostructures will be discussed. In particular, some of these nanostructures have been found to be of interest as optical microcavities. These nanomaterials may have applications in optical sensing and energy devices.
Resumo:
We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.
Resumo:
Calcitic belemnite rostra are usually employed to perform paleoenvironmental studies based on geochemical data. However, several questions, such as their original porosity and microstructure, remain open, despite they are essential to make accurate interpretations based on geochemical analyses.This paper revisits and enlightens some of these questions. Petrographic data demonstrate that calcite crystals of the rostrum solidum of belemnites grow from spherulites that successively develop along the apical line, resulting in a “regular spherulithic prismatic” microstructure. Radially arranged calcite crystals emerge and diverge from the spherulites: towards the apex, crystals grow until a new spherulite is formed; towards the external walls of the rostrum, the crystals become progressively bigger and prismatic. Adjacent crystals slightly vary in their c-axis orientation, resulting in undulose extinction. Concentric growth layering develops at different scales and is superimposed and traversed by a radial pattern, which results in the micro-fibrous texture that is observed in the calcite crystals in the rostra.Petrographic data demonstrate that single calcite crystals in the rostra have a composite nature, which strongly suggests that the belemnite rostra were originally porous. Single crystals consistently comprise two distinct zones or sectors in optical continuity: 1) the inner zone is fluorescent, has relatively low optical relief under transmitted light (TL) microscopy, a dark-grey color under backscatter electron microscopy (BSEM), a commonly triangular shape, a “patchy” appearance and relatively high Mg and Na contents; 2) the outer sector is non-fluorescent, has relatively high optical relief under TL, a light-grey color under BSEM and low Mg and Na contents. The inner and fluorescent sectors are interpreted to have formed first as a product of biologically controlled mineralization during belemnite skeletal growth and the non-fluorescent outer sectors as overgrowths of the former, filling the intra- and inter-crystalline porosity. This question has important implications for making paleoenvironmental and/or paleoclimatic interpretations based on geochemical analyses of belemnite rostra.Finally, the petrographic features of composite calcite crystals in the rostra also suggest the non-classical crystallization of belemnite rostra, as previously suggested by other authors.
Resumo:
The properties of microelectrical conduction in microwave plasma assisted chemical vapour deposition (MPCVD) diamond films were investigated using an atomic force microscopy probe, giving a morphological map of the electrical conduction with a spatial resolution better than 500 nm. Also, a cathodoluminescence map with a spatial resolution of about 1 mu m was obtained, giving the possibility of correlating the defects involved in the different carrier transport phenomena. Using micro-Raman analysis several bands could be identified. It is found that the defects responsible for the cathodoluminescence (CL) blue band are responsible for the major part of the electrical conduction in diamond films, while the defects localised in < 111 > surfaces, responsible for the green CL emission, could be involved in a less conductive process. (C) 2000 Elsevier Science S.A. All rights reserved.
Resumo:
The general objective of this study was to contribute to the understanding of the chemical evolution of fluids that percolate through carbonate rocks of the Jandaíra Formation. The oxidation and reduction conditions in which grains, source and cement were formed was investigated using the cathodoluminescence technique (CL). The study area is located in the west part of the Potiguar Basin (Fazenda Belém field) and Rosário Ledge (Felipe Guerra municipality, State of Rio Grande do Norte, Brazil). The analysis of thin sections of carbonate rocks under CL revealed that grains (allochemical or not) and diagenetic products (micritization, dolomitization, neomorphism and cementation) exhibit since absence of luminescence the various luminescence colors (yellow, orange, red, brown, and blue) in a variety of intensities. As pure calcite shows dark blue luminescence, the occurrence of different luminescence colors in calcite crystals suggest one or more punctual crystal defects such as free electron, free space and impurity. The dyeing of thin sections with alizarin and potassium ferrocyanide revealed the absence of ferrous carbonate in the different lithotypes of Jandaíra Formation. Therefore, the different colors and intensities of CL observed in these rocks are probably caused by the presence of ion activators such as Mn2+ and is not an activator/inhibitor combination. In the same way, the absence of luminescence is very probably caused by the absence of activator ions and not due to the low concentration of inhibitor ions such as Fe2+. The incorporation of Mn2+ in the different members of the Jandaíra Formation must have been controlled by the redox state of the depositional environment and diagenesis. Therefore, it is possible that the luminescent members have been formed (e.g.,ooids) or have been modified (gastropod neomorphism) under reduction conditions in the depositional environments, in subsurface during the burial, or, in the case of Rosario Ledge samples , during the post-burial return to surface conditions. As regards the sudden changes from low to moderate and to strong luminescence, these features should indicate the precipitation of a fluid with chemical fluctuations, which formed the frequent zonations in the block cement of the Rosario Ledge samples. This study suggests that the different intensities and colors of CL should be correlated with the Mn2+ and Fe2+ contents, and stable isotopes of samples to determine the salinity, temperature, pH e Eh conditions during deposition
Resumo:
The properties of microelectrical conduction in microwave plasma assisted chemical vapour deposition (MPCVD) diamond films were investigated using an atomic force microscopy probe, giving a morphological map of the electrical conduction with a spatial resolution better than 500 nm. Also, a cathodoluminescence map with a spatial resolution of about 1 mu m was obtained, giving the possibility of correlating the defects involved in the different carrier transport phenomena. Using micro-Raman analysis several bands could be identified. It is found that the defects responsible for the cathodoluminescence (CL) blue band are responsible for the major part of the electrical conduction in diamond films, while the defects localised in < 111 > surfaces, responsible for the green CL emission, could be involved in a less conductive process. (C) 2000 Elsevier Science S.A. All rights reserved.
Resumo:
With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.