Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Influence of fabrication steps on optical and electrical properties of InN thin films

This paper reports on a case study of the impact of fabrication steps on InN material properties. We discuss the influence of annealing time and sequence of device processing steps. Photoluminescence (PL), surface morphology and electrical transport (electrical resistivity and low frequency noise) properties have been studied as responses to the adopted fabrication steps. Surface morphology has a strong correlation with annealing times, while sequences of fabrication steps do not appear to be influential. In contrast, the optical and electrical properties demonstrate correlation with both etching and thermal annealing. For all the studied samples PL peaks were in the vicinity of 0.7 eV, but the intensity and full width at half maximum (FWHM) demonstrate a dependence on the technological steps followed. Sheet resistance and electrical resistivity seem to be lower in the case of high defect introduction due to both etching and thermal treatments. The same effect is revealed through 1/f noise level measurements. A reduction of electrical resistivity is connected to an increase in 1/f noise level.

Preparation and electrical properties of graphene nanosheet/Al2O3 composites

Fully dense graphene nanosheet(GNS)/Al2O3 composites with homogeneously distributed GNSs of thicknesses ranging from 2.5 to 20 nm have been fabricated from ball milled expanded graphite and Al2O3 by spark plasma sintering. The percolation threshold of electrical conductivity of the as-prepared GNS/Al2O3 composites is around 3 vol.%, and this new composite outperforms most of carbon nanotube/Al2O3 composites in electrical conductivity. The temperature dependence of electrical conductivity indicated that the as-prepared composites behaved as a semimetal in a temperature range from 2 to 300 K.

Enhanced stability in CO2 of Ta doped BaCe0.9Y 0.1O3-δ electrolyte for intermediate temperature SOFCs

The influence of Ta concentration on the stability of BaCe 0.9-xTaxY0.1O3-δ (where x=0.01, 0.03 and 0.05) powders and sintered samples in CO2, their microstructure and electrical properties were investigated. The ceramic powders were synthesized by the method of solid state reaction, uniaxially pressed and sintered at 1550 °C to form dense electrolyte pellets. A significant stability in CO2 indicated by the X-ray analysis performed was observed for the samples with x≥0.03. The electrical conductivities determined by impedance measurements in the temperature range of 550-750 °C and in various atmospheres (dry argon, wet argon and wet hydrogen) increased with temperature but decreased with Ta concentration. The highest conductivities were observed in the wet hydrogen atmosphere, followed by those in wet argon, while the lowest were obtained in the dry argon atmosphere for each dopant concentration. The composition with Ta content of 3 mol% showed satisfactory characteristics: good resistance to CO2 in extreme testing conditions, while a somewhat reduced electrical conductivity is still comparable with that of BaCe0.9Y0.1O3-δ. © 2012 Elsevier Ltd and Techna Group S.r.l.

Mechanical, electrical and electro-mechanical properties of thermoplastic elastomer styrene–butadiene–styrene/multiwal carbon nanotubes composites

Composites of styrene–butadiene–styrene (SBS) block copolymer with multiwall carbon nanotubes were processed by solution casting to investigate the influence of filler content, the different ratios of styrene/butadiene in the copolymer and the architecture of the SBS matrix on the electrical, mechanical and electro-mechanical properties of the composites. It was found that filler content and elastomer matrix architecture influence the percolation threshold and consequently the overall composite electrical conductivity. Themechanical properties aremainly affected by the styrene and filler content. Hopping between nearest fillers is proposed as the main mechanism for the composite conduction. The variation of the electrical resistivity is linear with the deformation. This fact, together with the gauge factor values in the range of 2–18, results in appropriate composites to be used as (large) deformation sensors.

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

Electrical conductivity, dielectric properties and phase transition in ethylenediammonium sulphate single crystals

D.C. and a.c. electrical conductivities, dielectric constant and dielectric loss factor in single crystals of ethylenediammonium sulphate, (H3NCH2CH2NH3)(SO4), have been measured axiswise as a function of temperature. Anomalous variations in all the above properties at 480 K indicate the occurrence of a phase transition in the above material at this temperature. The existence of such a phase transition is also confirmed by DSC measurements. Electrical conductivity results are analysed and the activation energies of conduction at different temperature regions have been evaluated from the logσ vs 103T−1 plot. Possible mechanisms for the electrical conduction process are discussed, the available results being in favour of a proton transport model.

Dependence of the electrical conductivity and elastomeric properties on sample preparation of blends of polyaniline and natural rubber

Blend films (free-standing) containing 20% in volume of polyaniline (PANI) in 80% of natural rubber (NR) were fabricated by casting in three different ways: (1) adding PANI-EB (emeraldine base) dissolved in N-methyl-2-pyrrolidone (NMP) to the latex (NRL), (2) adding PANI-EB dissolved in in-cresol to NR dissolved in xylol (NRD), (3) overlaying the surface of a pure NR cast film with a PANI layer grown by in situ polymerization (NRO). All the films were immersed into HCl solution to achieve the primary doping (protonation) of PANI before the characterization. The main goal here was to investigate the elastomeric and electrical conductivity properties for each blend, which may be applied as pressure and deformation sensors in the future. The characterization was carried out by optical microscopy, dc conductivity, vibrational spectroscopy (infrared absorption and Raman scattering), thermogravimetry analysis (TGA), differential scanning calorimetry (DSC), dynamic mechanical thermal analysis (DMTA), and tensile stress-strain curves. The results suggest that the NRL blend is the most suitable in terms of mechanical and electrical properties required for applications in pressure and deformation sensors: a gain of conductivity without losing the elastomeric property of the rubber. (c) 2005 Wiley Periodicals, Inc.

Influence of vanadium on electrical and microstructural properties of CaCu3Ti4O12/CaTiO3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electrical and microstructural properties of microwave sintered SnO2-based varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)