Optical Properties of Sb2Te3, and Dilute Magnetic Semiconductors Sb1.97 VO.03 Te3 and Sb1.94 CrO.06 Te3

This thesis reports on the optical properties of the dilute magnetic semiconductors, Sb1.97 V 0.03 Te3 and Sb1.94Cr0.06Te3, along with the parent compound Sb2Te3' These materials develop a ferromagnetic state at low temperature with Curie temperatures of 22 K and 16 K respectively. All three samples were oriented such that the electric field vector of the light was perpendicular to the c-axis. The reflectance profile of these samples in the mid-infrared (500 to 3000 cm-1) shows a pronounced plasma edge which retracts with decreasing temperature. The far-infrared region of these samples exhibits a phonon at ~ 60 cm-1 which softens as temperature decreases. Kramers-Kronig analysis and a Drude-Lorentz model were employed to determine the optical constants of the bulk samples. The real part of the optical conductivity is shown to consist of intraband contributions at frequencies below the energy gap (~0.26 eV) and interband contributions at frequencies above the energy gap. The temperature dependence of the scattering rate show that a mix of phonon and impurity scattering are present, while the signature of traditional spin disorder (magnetic) scattering was difficult to confirm.

Aplicación del OPH-03 en el uso eficiente de la energia eléctrica

UANL

Synthesis, Characterisation and Properties of (Ba1-xSrx) (Nd1/2Nb1/2 ) 03 Ceramics for Application as Dielectric Resonators in Microwave Circuits

The (Ba1-x Srx) (Nd1/2, Nb1/2) O3 ceramics have been prepared by the conventional ceramic route for different values of x. Addition of a small amount of CeO2(1 wt%) as a sintering aid increased the density of the samples. The structure and microstructure of the sintered samples are studied by X-ray diffraction and SEM methods. The dielectric properties of the samples are measured in the microwave frequency region as a function of composition. The dielectric constant decreases as x increases. The coefficient of thermal variation of resonant frequency decreases as the Sr content increases and goes to the negative side. The dielectric properties of (Ba1-x Srx) (Nd1/2, Nb1/2) O3 are in the range suitable for application as dielectric resonators in microwave circuits

Ba(Tb1/2Nb1/2)03: A New Ceramic Microwave Dielectric Resonator

A new microwave dielectric resonator Ba(Tb1/2Nb1/2)03 has been prepared and characterized in the microwave frequency region. 1 wt% CeO2 is used as additive to reduce the sintering temperature. The sintered samples were characterized by XRD, SEM and Raman spectroscopic methods. Microwave DR properties such as er, Q factor and temperature-coefficient of resonant frequency (Ti) have been measured using a HP 8510 B Network Analyzer. Cylindrical DRs of Ba(Tb1/2Nbi/2)03 showed high Er (~ 37), high Q (~3,200) and low Tf (~10 ppm /°C) at 4 GHz and hence are useful for practical applications