200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Requirements-based development of an improved engineering change management method

Engineering changes (ECs) are essential in complex product development, and their management is a crucial discipline for engineering industries. Numerous methods have been developed to support EC management (ECM), of which the change prediction method (CPM) is one of the most established. This article contributes a requirements-based benchmarking approach to assess and improve existing methods. The CPM is selected to be improved. First, based on a comprehensive literature survey and insights from industrial case studies, a set of 25 requirements for change management methods are developed. Second, these requirements are used as benchmarking criteria to assess the CPM in comparison to seven other promising methods. Third, the best-in-class solutions for each requirement are investigated to draw improvement suggestions for the CPM. Finally, an enhanced ECM method which implements these improvements is presented. © 2013 © 2013 The Author(s). Published by Taylor & Francis.

长江白鱀豚的行为特征

<正> 长江白暨豚行为的研究,始于近几年。作者于1983年12月至1985年2月,在历年来白暨豚出没较多的洪湖新滩口——螺山江段、安徽安庆——黑沙洲江段,采用多条小木船分散在江面上,从多个角度对自然状态下的白暨豚出水呼吸时所表现出的行为特征,作了观察、研究。

Genomic organization and expression analysis of Toll-like receptor 3 in grass carp (Ctenopharyngodon idella)

Toll-like receptor 3 (TLR3) participates in the innate immune response by recognizing viral pathogens. To investigate grass carp immune system responding to GCRV (grass carp reovirus) infection, the full-length cDNA sequence and genomic organization of grass carp TLR3 (CiTLR3) was identified and characterized. The full-length genome sequence of CiTLR3 is composed of 5668 nucleotides, including five exons and four introns. The full-length of CiTLR3 cDNA is 3681 bp in length and encodes a polypeptide of 904 amino acids with an estimated molecular mass of 102,765 Da and a predicted isoelectric point of 8.35. Analysis of the deduced amino acid sequence indicated that CiTLR3 has four main structural domains, including a signal peptide sequence, 14 LRR (leucine-rich repeat) motifs, a transmembrane region and a TIR (Toll/interleukin-1 receptor) domain. It is most similar to the crucian carp (Carassius auratus) TLR3 amino acid sequence with an identity of 99%. Quantitative RT-PCR analysis showed that CiTLR3 transcripts were significantly up-regulated starting at day 1 and continued through day 7 following GCRV infection (P < 0.05). These data implied that CiTLR3 is involved in antiviral defense, provide molecular and functional information for grass carp TLR3, and implicate their role in mediating immune protection against grass carp viral diseases. (C) 2009 Elsevier Ltd. All rights reserved.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

High performance of 1.55 mu m DFB integrated with vertically tapered self-aligned spot-size converter

A new type of self-aligned spotsize converter (SSC) integrated 1.55 mum DFB lasers had been proposed in this article. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separate optimization of the active region and the integrated SSC, but also reduced the difficulty of the butt-joint selective regrowth. The vertical and horizontal far field angles were 9degrees and 12degrees respectively, the 1- dB misalignment tolerance were both 3.6 and 3.4 mum. The directed coupling efficiency to tapered single mode fiber was 48%.

impossible differential cryptanalysis of reduced-round aria and camellia

This paper studies the security of the block ciphers ARIA and Camellia against impossible differential cryptanalysis. Our work improves the best impossible differential cryptanalysis of ARIA and Camellia known so far. The designers of ARIA expected no impossible differentials exist for 4-round ARIA. However, we found some nontrivial 4-round impossible differentials, which may lead to a possible attack on 6-round ARIA. Moreover, we found some nontrivial 8-round impossible differentials for Camellia, whereas only 7-round impossible differentials were previously known. By using the 8-round impossible differentials, we presented an attack on 12-round Camellia without FL/FL 1 layers.

Methane hydrate growth velocity in seepage system of Qiongdongnan Basin, South China Sea

The occurrences of diapirs, gas-filled zones and gas plumes in seawater in Qiongdongnan Basin of South China Sea indicate that there may exist seepage system gas-hydrate reservoirs. Assuming there has a methane venting zone of 1500 m in diameter, and the methane flux is 1000 kmol/a, and the temperature of methane hydrate-bearing sediments ranges from 3 degrees C to 20 degrees C, then according to the hydrate film growth theory, by numerical simulation, this paper computes the temperatures and velocities in 0 mbsf, 100 mbsf, 200 mbsf, 425 mbsf over discrete length, and gives the change charts. The results show that the cementation velocity in sediments matrix of methane hydrate is about 0.2 nm/s, and the seepage system will evolve into diffusion system over probably 35000 years. Meanwhile, the methane hydrate growth velocity in leakage system is 20 similar to 40 times faster than in diffusion system.