High-frequency acousto-electric single-photon source

We propose a single optical photon source for quantum cryptography based on the acoustoelectric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons that reside in the SAW minima and travel at the velocity of sound. In our scheme, the electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single- (or N-) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated. ©2000 The American Physical Society.

Amplitude/frequency of spontaneous mEPSC correlates to the degree of long-term depression in the CA1 region of the hippocampal slice

Prior synaptic or cellular activity influences degree or threshold for subsequent induction of synaptic plasticity, a process known as metaplasticity. Thus, the continual synaptic activity, spontaneous miniature excitatory synaptic current (mEPSC) may correlate to the induction of long-teen depression (LTD). Here, we recorded whole-cell EPSC and mEPSC alternately in the Schaffer-CA1 synapses in brain slice of young rats, and found that this recording configuration affected neither EPSC nor mEPSC. Low frequency stimulation (LFS) induced variable magnitudes of LTD. Remarkably, larger magnitudes of LTD were significantly correlated to smaller amplitude/lower frequency of the basal mEPSC. Furthermore, under the conditions reduced amplitude/frequency of the basal mEPSC by exposure to behavioral stress immediately before slice preparation or low concentration of calcium in bath solution, the magnitudes of LTD were still inversely correlated to mEPSC amplitude/frequency. These new findings suggest that spontaneous mEPSC may reflect functional and/or structural aspects of the synapses, the synaptic history ongoing metaplasticity. (C) 2005 Elsevier B.V. All rights reserved.

藏鸡线粒体全基因组序列的测定和分析

通过PCR扩增,测序,拼接,获得藏鸡(Tibetan Chicken)线粒体全基因组序列并进行数据分析处理.藏鸡线粒体全基因组序列全长16 783 bp,共有13个蛋白质编码基因、2个rRNA基因、22个tRNA基因和1个D-loop区.模拟电子酶切结果显示,藏鸡Dra Ⅰ酶的酶切结果和先前报道的原鸡,茶花鸡,尼西鸡和大理漾濞黄鸡的酶切结果都不相同,为藏鸡特有.基于D-loop区全序列和13个蛋白质编码基因序列,采用N-J算法与原鸡属4个种,3个亚种和3个家鸡品系构建系统进化树:初步确定藏鸡起源于红原鸡,与家鸡中的来航鸡、白洛克鸡亲缘关系最近,但是藏鸡的进化与来航鸡、白洛克鸡这两个家鸡品系又显得相对独立.推测可能原因是藏鸡的祖先在进入高原以后处于相对封闭的环境,从而形成了独特群体遗传特性.

饥饿状态下转基因鲤鱼和对照鲤鱼血清生长激素的表达研究

研究采用酶联免疫吸附测定(Enzyme-linked immunosorbent assays,ELISA)技术,比较分析了转GH基因鲤鱼和对照鲤鱼在饥饿和饱食状态下血清生长激素水平的变化规律,并探讨其可能机制。实验结果表明,在投喂实验中,转基因鲤鱼和对照鲤鱼血清生长激素水平均无明显变化,但转基因鲤鱼血清生长激素远高于对照鲤鱼,分别为(142.0±4.9)ng/mL和(1.6±0.2)ng/mL,转基因鲤鱼体重增长速率显著高于对照鱼。在饥饿实验中,转基因鲤鱼的血清生长激素迅速下降,从(142.0±4.9)

中国淡水微囊藻属常见种类的分类学讨论——以滇池为例

根据中国云南滇池藻类样品的观察结果,对中国分布的淡水微囊藻属Microcystis10个常见种的形态特征进行了描述,同时对它们的分类学进行了讨论,并整理出分类检索表。这10种微囊藻是铜绿微囊藻M.aeruginosa、放射微囊藻M.botrys、坚实微囊藻M.firma、水华微囊藻M.flos-aquae、鱼害微囊藻M.ichthyoblabe、挪氏微囊藻M.novacekii、假丝微囊藻M.pseudofilamentosa、史密斯微囊藻M.smithii、绿色微囊藻M.viridis、惠氏微囊藻M.w

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

Key principles for developing industrially relevant strategic technology management toolkits

When considering the potential uptake and utilization of technology management tools by industry, it must be recognized that companies face the difficult challenges of selecting, adopting and integrating individual tools into a toolkit that must be implemented within their current organizational processes and systems. This situation is compounded by the lack of sound advice on integrating well-founded individual tools into a robust toolkit that has the necessary degree of flexibility such that they can be tailored for application to specific problems faced by individual organizations. As an initial stepping stone to offering a toolkit with empirically proven utility, this paper provides a conceptual foundation to the development of toolkits by outlining an underlying philosophical position based on observations from multiple research and commercial collaborations with industry. This stance is underpinned by a set of operationalized principles that can offer guidance to organizations when deciding upon the appropriate form, functions and features that should be embodied by any potential tool/toolkit. For example, a key objective of any tool is to aid decision-making and a core set of powerful, flexible, scaleable and modular tools should be sufficient to allow users to generate, explore, shape and implement possible solutions across a wide array of strategic issues. From our philosophical stance, the preferred mode of engagement is facilitated workshops with a participatory process that enables multiple perspectives and structures the conversation through visual representations in order to manage the cognitive load in the collaborative environment. The generic form of the tools should be configurable for the given context and utilized in a lightweight manner based on the premise of 'start small and iterate fast'. © 2012 Elsevier Inc.

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Photoluminescence study on Eu-implanted GaN

The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050 degrees C. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050 degrees C is only 42.7%.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.