High resolution time-of-flight spectrometer for crossed molecular beam study of elementary chemical reactions

In this article, we describe an apparatus in our laboratory for investigating elementary chemical reactions using the high resolution time-of-flight Rydberg tagging method. In this apparatus, we have adopted a rotating source design so that collision energy can be changed for crossed beam studies of chemical reactions. Preliminary results on the HI photodissociation and the F atom reaction with H-2 are reported here. These results suggest that the experimental apparatus is potentially a powerful tool for investigating state-to-state dynamics of elementary chemical reactions. (c) 2005 American Institute of Physics.

Photodissociation of 1-bromo-2-chloroethane at 266 nm

The photodissociation of CH2BrCH2Cl at 266 nm has been investigated on the universal crossed molecular beam machine. The primary dissociation step leads exclusively to the formation of CH2CH2Cl radicals and Br atoms in the electronic ground state as well as in the spin-orbit excited state, with a branching ratio 2 +/- 1:8 +/- 1. Photofragment total c.m. translational energy distribution P(E-t) has been obtained and about 64% of the available energy is partitioned into translational energy for Br channel and about 28.5% of the available energy is partitioned into translational energy for Br* channel. The anisotropy parameters are determined to be beta(Br*) = 0.8 +/- 0.2 and beta(Br) = -0.6 +/- 0.2, respectively. Some CH2CH2Cl radicals with large internal excitation (corresponding to formation of ground state Br channel) may undergo secondary dissociation to form CH2CH2 +/- Cl. The experimental results are discussed in terms of a model that involves the initial excitation of two repulsive electronic states: one from an parallel transition to the (3)Q(0) state, and the other from a perpendicular transition to the (3)Q(1), (1)Q states. (C) 1999 Elsevier Science B.V. All rights reserved.

Photofragment translational spectroscopy of p-bromotoluene at 266 nm

Photodissociation of p-bromotoluene at 266 nm has been investigated on the universal crossed molecular beam machine, and translational energy distribution P(E-t) as well as the anisotropy parameter beta have been obtained. Photofragment translational energy distribution P(E-t) reveals that similar to 38.5% of the available energy is partitioned into translational energy. The anisotropy parameter beta is determined to be -0.4 +/- 0.2. From P(E-t) and beta, we deduce that p-bromotoluene photodissociation is a fast process and the perpendicular transition plays a central role at this wavelength. The possible mechanism has been discussed and comparison of p-bromotoluene with bromobenzene, o-bromotoluene has also been made. (C) 1999 Elsevier Science B.V. All rights reserved.

Photodissociation of bromobenzene at 266 nm

The photodissociation of C6H5Br at 266 nm has been investigated on the universal crossed molecular beam machine, and time-of-flight spectra as well as the angular distribution of Br atom have been measured. Photofragment translational energy distribution P(E-t) reveals that about 47% of the available energy is partitioned into translational energy. The anisotropy parameter beta at this wavelength is -0.7+/-0.2. From P(E-t) and beta, we deduce that C6H5Br photodissociation is a fast process and the transition dipole moment is almost perpendicular to the C-Br bond. Ab initio calculations have been performed, and the calculated results show that the geometry of the first excited state of bromobenzene has changed apparently compared with that of the ground state. Two kinds of possible fast dissociation mechanism have also been proposed. (C) 1999 American Institute of Physics. [S0021-9606(99)01206-4].

Photofragment translational spectroscopy of iodobenzene at 266 nm

The photofragmentation of C6H5I at 266 nn is investigated on the universal crossed molecular beam ma chine, and the translational spectroscopy as well as the angular distribution of I atom is measured. The results reveal that under the laser intensity of 10(R) W/cm(2) the single-photon dissociation competes with multi-photon processes. In single-photon dissociation the anisotropy parameter beta is 0.4 and the average translational energy is only 1.04 kcal/mol, which indicates that this process is a slow predissociation. In two-photon photofragmentation the average translational energy is 51.64 kcal/mol, which accounts for about 35% of the available energy. Another photofragmentation channel is even more faster, whose peak in time-of-flight spectra corresponds to four or five photon absorptions. The branching ratio of these three channels is determined to he about 3:3:4.

Photodissociation of o-dichlorobenzene at 266 nm

The photodissociation o-dichlorobenzene at 266 nm has been investigated using the universal crossed molecular beam technique. Photofragment translational energy distribution P(E-t) and angular distribution of photofragments have been obtained and it is estimated that 23% of the available energy is assigned to translational energy. The anisotropy parameter is determined to be 0.4. From P(E-t) and beta we deduce that o-C6H4Cl2 photodissociation is a slow process. Ab initio calculation has been performed and it shows that the parent molecule has a larger geometry deformation in its excited states comparing with that of the ground state. The possible dissociation mechanism has also been proposed. (C) 1999 Elsevier Science B.V. All rights reserved.

The hydrogen bond: a molecular beam microwave spectroscopist's view with a universal appeal

In this manuscript, we propose a criterion for a weakly bound complex formed in a supersonic beam to be characterized as a `hydrogen bonded complex'. For a `hydrogen bonded complex', the zero point energy along any large amplitude vibrational coordinate that destroys the orientational preference for the hydrogen bond should be significantly below the barrier along that coordinate so that there is at least one bound level. These are vibrational modes that do not lead to the breakdown of the complex as a whole. If the zero point level is higher than the barrier, the `hydrogen bond' would not be able to stabilize the orientation which favors it and it is no longer sensible to characterize a complex as hydrogen bonded. Four complexes, Ar-2-H2O, Ar-2-H2S, C2H4-H2O and C2H4-H2S, were chosen for investigations. Zero point energies and barriers for large amplitude motions were calculated at a reasonable level of calculation, MP2(full)/aug-cc-pVTZ, for all these complexes. Atoms in molecules (AIM) theoretical analyses of these complexes were carried out as well. All these complexes would be considered hydrogen bonded according to the AIM theoretical criteria suggested by Koch and Popelier for C-H center dot center dot center dot O hydrogen bonds (U. Koch and P. L. A. Popelier, J. Phys. Chem., 1995, 99, 9747), which has been widely and, at times, incorrectly used for all types of contacts involving H. It is shown that, according to the criterion proposed here, the Ar-2-H2O/H2S complexes are not hydrogen bonded even at zero kelvin and C2H4-H2O/H2S complexes are. This analysis can naturally be extended to all temperatures. It can explain the recent experimental observations on crystal structures of H2S at various conditions and the crossed beam scattering studies on rare gases with H2O and H2S.

Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy

InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system. Variation of the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs. As the growth temperature was increased from 100 C to 300 degrees C, an enlargement of QD size and a drop in dot density were observed, which was led by the limitation of surface diffusion of adatoms with the limited thermal energy. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to assess the QDs size and density. The chemical bonding configurations of InN QDs were examined by X-ray photo-electron spectroscopy (XPS). Fourier transform infrared (FTIR) spectrum of the deposited InN QDs shows the presence of In-N bond. Temperature-dependent photoluminescence (PL) measurements showed that the emission peak energies of the InN QDs are sensitive to temperature and show a strong peak emission at 0.79 eV.

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

Design and fabrication of an indigenous molecular beam ultraviolet photoelectron spectrometer

An ultraviolet photoelectron spectrometer for the study of van der Waals molecules has been designed and fabricated indigenously. The spectrometer consists of an HeI discharge lamp, a molecular beam sample inlet system, an electrostatic lens, a 180-degrees hemispherical electrostatic analyser and a channeltron detector. Performance of the spectrometer is illustrated with an example.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy

The indium nitride (InN)-based nanometric-objects were grown directly on a c-sapphire substrate by using plasma-assisted molecular beam epitaxy (PAMBE) at different substrate temperatures. High resolution X-ray diffraction (HRXRD) reveals the InN (0002) reflection and full width at half maximum (FWHM) found to be decreased with increasing the growth temperature. The size, height and density of the grown nanometric-objects studied by scanning electron microscopy (SEM) has remarkable differences, evidencing the decisive role of substrate temperature. Photoluminescence (PL) studies revealed that the emission energy is shifted towards the higher side from the bulk value, i.e., a blue shift in the PL spectra was observed. The temperature dependence of the PL peak position shows an ``S-shaped'' emission energy shift, which can be attributed to the localization of carriers in the nanometric-objects.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]