Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

A Random Access Protocol incorporating Multi-Packet Reception, Retransmission Diversity and Successive Interference Cancellation

8th International Workshop on Multiple Access Communications (MACOM2015), Helsinki, Finland.

A random access MAC protocol for MPR satellite networks

Dissertação apresentada para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores, pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia

Random Access over Multi-Packet Reception Channels: A Mean-Field Approach

Thesis (Ph.D.)--University of Washington, 2016-06

A novel approach to Non-Orthogonal Random Access with application to NB-IoT NTN systems

In the Massive IoT vision, millions of devices need to be connected to the Internet through a wireless access technology. However, current IoT-focused standards are not fully prepared for this future. In this thesis, a novel approach to Non-Orthogonal techniques for Random Access, which is the main bottleneck in high density systems, is proposed. First, the most popular wireless access standards are presented, with a focus on Narrowband-IoT. Then, the Random Access procedure as implemented in NB-IoT is analyzed. The Non-Orthogonal Random Access technique is presented next, along with two potential algorithms for the detection of non-orthogonal preambles. Finally, the performance of the proposed solutions are obtained through numerical simulations.

Detection e Classificazione di Jammer in Protocolli Random Access

Con il crescente utilizzo delle reti wireless la sicurezza e l'affidabilità del servizio stanno diventando requisiti fondamentali da garantire. Questo studio ha come obiettivi il rilevamento di un attacco jammer e la classificazione della tipologia dell'attacco (reattivo, random e periodico) in una rete wireless in cui gli utenti comunicano con un access point tramite il protocollo random access slotted Aloha. La classificazione degli attacchi è infatti fondamentale per attuare le dovute contromisure ed evitare cali di performance nella rete. Le metriche estratte, fra cui la packet delivery ratio (PDR) e la rispettiva analisi spettrale, il rapporto segnale rumore medio e la varianza dell'rapporto segnale rumore, sono risultate essere efficaci nella classificazione dei jammers. In questo elaborato è stato implementato un sistema di detection e classificazione di jammer basato su machine learning, che ha permesso di ottenere una accuratezza complessiva del 92.5% nella classificazione ed una probabilità di detection superiore al 95% per valori di PDR inferiori o uguali al 70%.

Neural Network based Non Orthogonal Random Access for 6G NTN-IoT

Pervasive and distributed Internet of Things (IoT) devices demand ubiquitous coverage beyond No-man’s land. To satisfy plethora of IoT devices with resilient connectivity, Non-Terrestrial Networks (NTN) will be pivotal to assist and complement terrestrial systems. In a massiveMTC scenario over NTN, characterized by sporadic uplink data reports, all the terminals within a satellite beam shall be served during the short visibility window of the flying platform, thus generating congestion due to simultaneous access attempts of IoT devices on the same radio resource. The more terminals collide, the more average-time it takes to complete an access which is due to the decreased number of successful attempts caused by Back-off commands of legacy methods. A possible countermeasure is represented by Non-Orthogonal Multiple Access scheme, which requires the knowledge of the number of superimposed NPRACH preambles. This work addresses this problem by proposing a Neural Network (NN) algorithm to cope with the uncoordinated random access performed by a prodigious number of Narrowband-IoT devices. Our proposed method classifies the number of colliding users, and for each estimates the Time of Arrival (ToA). The performance assessment, under Line of Sight (LoS) and Non-LoS conditions in sub-urban environments with two different satellite configurations, shows significant benefits of the proposed NN algorithm with respect to traditional methods for the ToA estimation.

Random Access Procedures in 5G IoT via NTN: System level performances

The Internet of Things (IoT) is a critical pillar in the digital transformation because it enables interaction with the physical world through remote sensing and actuation. Owing to the advancements in wireless technology, we now have the opportunity of using their features to the best of our abilities and improve over the current situation. Indeed, the Internet of Things market is expanding at an exponential rate, with devices such as alarms and detectors, smart metres, trackers, and wearables being used on a global scale for automotive and agriculture, environment monitoring, infrastructure surveillance and management, healthcare, energy and utilities, logistics, good tracking, and so on. The Third Generation Partnership Project (3GPP) acknowledged the importance of IoT by introducing new features to support it. In particular, in Rel.13, the 3GPP introduced the so-called IoT to support Low Power Wide Area Networks (LPWAN).As these devices will be distributed in areas where terrestrial networks are not feasible or commercially viable, satellite networks will play a complementary role due to their ability to provide global connectivity via their large footprint size and short service deployment time. In this context, the goal of this thesis is to investigate the viability of integrating IoT technology with satellite communication (SatCom) systems, with a focus on the Random Access(RA) Procedure. Indeed, the RA is the most critical procedure because it allows the UE to achieve uplink synchronisation, obtain the permanent ID, and obtain uplink transmission resources. The goal of this thesis is to evaluate preamble detection in the SatCom environment.

Select-divide-and-conquer method for large-scale configuration interaction

A select-divide-and-conquer variational method to approximate configuration interaction (CI) is presented. Given an orthonormal set made up of occupied orbitals (Hartree-Fock or similar) and suitable correlation orbitals (natural or localized orbitals), a large N-electron target space S is split into subspaces S0,S1,S2,...,SR. S0, of dimension d0, contains all configurations K with attributes (energy contributions, etc.) above thresholds T0={T0egy, T0etc.}; the CI coefficients in S0 remain always free to vary. S1 accommodates KS with attributes above T1≤T0. An eigenproblem of dimension d0+d1 for S0+S 1 is solved first, after which the last d1 rows and columns are contracted into a single row and column, thus freezing the last d1 CI coefficients hereinafter. The process is repeated with successive Sj(j≥2) chosen so that corresponding CI matrices fit random access memory (RAM). Davidson's eigensolver is used R times. The final energy eigenvalue (lowest or excited one) is always above the corresponding exact eigenvalue in S. Threshold values {Tj;j=0, 1, 2,...,R} regulate accuracy; for large-dimensional S, high accuracy requires S 0+S1 to be solved outside RAM. From there on, however, usually a few Davidson iterations in RAM are needed for each step, so that Hamiltonian matrix-element evaluation becomes rate determining. One μhartree accuracy is achieved for an eigenproblem of order 24 × 106, involving 1.2 × 1012 nonzero matrix elements, and 8.4×109 Slater determinants

Select-divide-and-conquer method for large-scale configuration interaction

A select-divide-and-conquer variational method to approximate configuration interaction (CI) is presented. Given an orthonormal set made up of occupied orbitals (Hartree-Fock or similar) and suitable correlation orbitals (natural or localized orbitals), a large N-electron target space S is split into subspaces S0,S1,S2,...,SR. S0, of dimension d0, contains all configurations K with attributes (energy contributions, etc.) above thresholds T0={T0egy, T0etc.}; the CI coefficients in S0 remain always free to vary. S1 accommodates KS with attributes above T1≤T0. An eigenproblem of dimension d0+d1 for S0+S 1 is solved first, after which the last d1 rows and columns are contracted into a single row and column, thus freezing the last d1 CI coefficients hereinafter. The process is repeated with successive Sj(j≥2) chosen so that corresponding CI matrices fit random access memory (RAM). Davidson's eigensolver is used R times. The final energy eigenvalue (lowest or excited one) is always above the corresponding exact eigenvalue in S. Threshold values {Tj;j=0, 1, 2,...,R} regulate accuracy; for large-dimensional S, high accuracy requires S 0+S1 to be solved outside RAM. From there on, however, usually a few Davidson iterations in RAM are needed for each step, so that Hamiltonian matrix-element evaluation becomes rate determining. One μhartree accuracy is achieved for an eigenproblem of order 24 × 106, involving 1.2 × 1012 nonzero matrix elements, and 8.4×109 Slater determinants

Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

An active leakage-injection scheme applied to low-voltage SRAMs

An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of μA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256×1bit array was designed in accordance with a 0.35 CMOS process and 1.2V-supply. A range of PSPICE simulation attests the efficacy of ALIS. With an extra power consumption of 242 μW, a 200 μA-leakage @125°C, corresponding to 13.6 times the cell current, is compensated.