Non-ideal monitoring of a qubit state using a quantum tunnelling device

We propose a model for non-ideal monitoring of the state of a coupled quantum dot qubit by a quantum tunnelling device. The non-ideality is modelled using an equivalent measurement circuit. This allows realistically available measurement results to be related to the state of the quantum system (qubit). We present a quantum trajectory that describes the stochastic evolution of the qubit state conditioned by tunnelling events (i.e. current) through the device. We calculate and compare the noise power spectra of the current in an ideal and a non-ideal measurement. The results show that when the two qubit dots are strongly coupled the non-ideal measurement cannot detect the qubit state precisely. The limitation of the ideal model for describing a realistic system maybe estimated from the noise spectra.

Classical and quantum noise in electronic systems

We review the description of noise in electronic circuits in terms of electron transport. The Poisson process is used as a unifying principle. In recent years, much attention has been given to current noise in light-emitting diodes and laser diodes. In these devices, random events associated with electron transport are correlated with photon emission times, thus modifying both the current statistics and the statistics of the emitted light. We give a review of experiments in this area with special emphasis on the ability of such devices to produce subshot-noise currents and light beams. Finally we consider the noise properties of a class of mesoscopic devices based on the quantum tunnelling of an electron into and out of a bound state. We present a simple quantum model of this process which confirms that the current noise in such a device should be subshot-noise.

Dynamical tunnelling of ultracold atoms

The divergence of quantum and classical descriptions of particle motion is clearly apparent in quantum tunnelling(1,2) between two regions of classically stable motion. An archetype of such nonclassical motion is tunnelling through an energy barrier. In the 1980s, a new process, 'dynamical' tunnelling(1-3), was predicted, involving no potential energy barrier; however, a constant of the motion (other than energy) still forbids classically the quantum-allowed motion. This process should occur, for example, in periodically driven, nonlinear hamiltonian systems with one degree of freedom(4-6). Such systems may be chaotic, consisting of regions in phase space of stable, regular motion embedded in a sea of chaos. Previous studies predicted(4) dynamical tunnelling between these stable regions. Here we observe dynamical tunnelling of ultracold atoms from a Bose-Einstein condensate in an amplitude-modulated optical standing wave. Atoms coherently tunnel back and forth between their initial state of oscillatory motion (corresponding to an island of regular motion) and the state oscillating 180 degrees out of phase with the initial state.

Exact results for a tunnel-coupled pair of trapped Bose-Einstein condensates

A model describing coherent quantum tunnelling between two trapped Bose-Einstein condensates is discussed. It is not well known that the model admits an exact solution, obtained some time ago, with the energy spectrum derived through the algebraic Bethe ansatz. An asymptotic analysis of the Bethe ansatz equations leads us to explicit expressions for the energies of the ground and the first excited states in the limit of weak tunnelling and all energies for strong tunnelling. The results are used to extract the asymptotic limits of the quantum fluctuations of the boson number difference between the two Bose-Einstein condensates and to characterize the degree of coherence in the system.

Developing sensorized arm skin for an octopus inspired robot

Soft skin artefacts made of knitted nylon reinforced silicon rubber were fabricated mimicking octopus skin. A combination of ecoflex 0030 and 0010 were used as matrix of the composite to obtain the right stiffness for the skin artefacts. Material properties were characterised using static uniaxial tension and scissors cutting tests. Two types of tactile sensors were developed to detect normal contact; one used quantum tunnelling composite materials and the second was fabricated from silicone rubber and a conductive textile. Sensitivities of the sensors were tested by applying different modes of loading and the soft sensors were incorporated into the skin prototype. Passive suckers were developed and tested against squid suckers. An integrated skin prototype with embedded deformable sensors and attached suckers developed for the arm of an octopus inspired robot is also presented.

Study of charge transport in blends of natural rubber and poly(o-methoxyaniline) based on a resistor network statistical model

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A SEMICLASSICAL DESCRIPTION OF NONLOCAL EFFECTS ON BARRIER TRANSMISSION

A quantum treatment for nonlocal factorizable potentials is presented in which the Weyl-Wiper quantum phase space description plays an essential role. The nonlocality is treated in an approximated form and allows for a Feynman propagator that can be handled in standard way. The semi-classical limit of the propagator is obtained which permits the calculation of the transmission factor in quantum tunnelling processes. An application in nuclear physics is also discussed.

Enhanced spin injection efficiency in ferromagnet/semiconductor tunnel junctions

Within the ballistic transport picture, we have investigated the spin-polarized transport properties of a ferromagnetic metal/two-dimensional semiconductor (FM/SM) hybrid junction and an FM/FM/SM structure using quantum tunnelling theory. Our calculations indicate explicitly that the low spin injection efficiency (SIE) from an FM into an SM, compared with a ferromagnet/normal metal junction, originates from the mismatch of electron densities in the FM and SM. To enhance the SIE from an FM into an SM, we introduce another FM film between them to form FM/FM/SM double tunnel junctions, in which the quantum interference effect will lead to the current polarization exhibiting periodically oscillating behaviour, with a variation according to the thickness of the middle FM film and/or its exchange energy strength. Our results show that, for some suitable values of these parameters, the SIE can reach a very high level, which can also be affected by the electron density in the SM electrode.

Simulation tools for the analysis of single electronic systems

Developments in theory and experiment have raised the prospect of an electronic technology based on the discrete nature of electron tunnelling through a potential barrier. This thesis deals with novel design and analysis tools developed to study such systems. Possible devices include those constructed from ultrasmall normal tunnelling junctions. These exhibit charging effects including the Coulomb blockade and correlated electron tunnelling. They allow transistor-like control of the transfer of single carriers, and present the prospect of digital systems operating at the information theoretic limit. As such, they are often referred to as single electronic devices. Single electronic devices exhibit self quantising logic and good structural tolerance. Their speed, immunity to thermal noise, and operating voltage all scale beneficially with junction capacitance. For ultrasmall junctions the possibility of room temperature operation at sub picosecond timescales seems feasible. However, they are sensitive to external charge; whether from trapping-detrapping events, externally gated potentials, or system cross-talk. Quantum effects such as charge macroscopic quantum tunnelling may degrade performance. Finally, any practical system will be complex and spatially extended (amplifying the above problems), and prone to fabrication imperfection. This summarises why new design and analysis tools are required. Simulation tools are developed, concentrating on the basic building blocks of single electronic systems; the tunnelling junction array and gated turnstile device. Three main points are considered: the best method of estimating capacitance values from physical system geometry; the mathematical model which should represent electron tunnelling based on this data; application of this model to the investigation of single electronic systems. (DXN004909)

Quantum measurement of coherent tunnelling between quantum dots

We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is subjected to a measurement of its occupation number by coupling it to a third readout dot via the Coulomb interaction. The readout dot is coupled to source and drain leads under weak bias, and a tunnel current flows through a single bound state when energetically allowed. The occupation of the quantum dot near the readout dot shifts the bound state of the readout dot from a low conducting state to a high conducting state. The measurement is made by continuously monitoring the tunnel current through the readout dot. We show that there is a difference between the time scale for the measurement-induced decoherence between the localized states of the dots, and the time scale on which the system becomes localized due to the measurement.

Interacting quantum-dissipative tunnelling systems

Die Untersuchung von dissipativen Quantensystemen erm¨oglicht es, Quantenph¨anomene auch auf makroskopischen L¨angenskalen zu beobachten. Das in dieser Dissertation gew¨ahlte mikroskopische Modell erlaubt es, den bisher nur ph¨anomenologisch zug¨anglichen Effekt der Quantendissipation mathematisch und physikalisch herzuleiten und zu untersuchen. Bei dem betrachteten mikroskopischen Modell handelt es sich um eine 1-dimensionale Kette von harmonischen Freiheitsgraden, die sowohl untereinander als auch an r anharmonische Freiheitsgrade gekoppelt sind. Die F¨alle einer, respektive zwei anharmonischer Bindungen werden in dieser Arbeit explizit betrachtet. Hierf¨ur wird eine analytische Trennung der harmonischen von den anharmonischen Freiheitsgraden auf zwei verschiedenen Wegen durchgef¨uhrt. Das anharmonische Potential wird als symmetrisches Doppelmuldenpotential gew¨ahlt, welches mit Hilfe der Wick Rotation die Berechnung der ¨Uberg¨ange zwischen beiden Minima erlaubt. Das Eliminieren der harmonischen Freiheitsgrade erfolgt mit Hilfe des wohlbekannten Feynman-Vernon Pfadintegral-Formalismus [21]. In dieser Arbeit wird zuerst die Positionsabh¨angigkeit einer anharmonischen Bindung im Tunnelverhalten untersucht. F¨ur den Fall einer fernab von den R¨andern lokalisierten anharmonischen Bindung wird ein Ohmsches dissipatives Tunneln gefunden, was bei der Temperatur T = 0 zu einem Phasen¨ubergang in Abh¨angigkeit einer kritischen Kopplungskonstanten Ccrit f¨uhrt. Dieser Phasen¨ubergang wurde bereits in rein ph¨anomenologisches Modellen mit Ohmscher Dissipation durch das Abbilden des Systems auf das Ising-Modell [26] erkl¨art. Wenn die anharmonische Bindung jedoch an einem der R¨ander der makroskopisch grossen Kette liegt, tritt nach einer vom Abstand der beiden anharmonischen Bindungen abh¨angigen Zeit tD ein ¨Ubergang von Ohmscher zu super- Ohmscher Dissipation auf, welche im Kern KM(τ ) klar sichtbar ist. F¨ur zwei anharmonische Bindungen spielt deren indirekteWechselwirkung eine entscheidende Rolle. Es wird gezeigt, dass der Abstand D beider Bindungen und die Wahl des Anfangs- und Endzustandes die Dissipation bestimmt. Unter der Annahme, dass beide anharmonischen Bindung gleichzeitig tunneln, wird eine Tunnelwahrscheinlichkeit p(t) analog zu [14], jedoch f¨ur zwei anharmonische Bindungen, berechnet. Als Resultat erhalten wir entweder Ohmsche Dissipation f¨ur den Fall, dass beide anharmonischen Bindungen ihre Gesamtl¨ange ¨andern, oder super-Ohmsche Dissipation, wenn beide anharmonischen Bindungen durch das Tunneln ihre Gesamtl¨ange nicht ¨andern.

Interplay Of Weak Interactions In The Atom-by-atom Condensation Of Xenon Within Quantum Boxes.

Condensation processes are of key importance in nature and play a fundamental role in chemistry and physics. Owing to size effects at the nanoscale, it is conceptually desired to experimentally probe the dependence of condensate structure on the number of constituents one by one. Here we present an approach to study a condensation process atom-by-atom with the scanning tunnelling microscope, which provides a direct real-space access with atomic precision to the aggregates formed in atomically defined 'quantum boxes'. Our analysis reveals the subtle interplay of competing directional and nondirectional interactions in the emergence of structure and provides unprecedented input for the structural comparison with quantum mechanical models. This approach focuses on-but is not limited to-the model case of xenon condensation and goes significantly beyond the well-established statistical size analysis of clusters in atomic or molecular beams by mass spectrometry.

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 degrees C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.

Control of the persistent currents in two interacting quantum rings through the Coulomb interaction and interring tunneling

The persistent current in two vertically coupled quantum rings containing few electrons is studied. We find that the Coulomb interaction between the rings in the absence of tunneling affects the persistent current in each ring and the ground-state configurations. Quantum tunneling between the rings alters significantly the ground state and the persistent current in the system.