Mesoporous dye-doped titanium dioxide for micro-optoelectronic applications

Optically transparent, mesostructured titanium dioxide thin films were fabricated using an amphiphilic poly(alkylene oxide) block copolymer template in combination with retarded hydrolysis of a titanium isopropoxide precursor. Prior to calcination, the films displayed a stable hexagonal mesophase and high refractive indices (1.5 to 1.6) relative to mesostructured silica (1.43). After calcination, the hexagonal mesophase was retained with surface areas >300 m2 g-1. The dye Rhodamine 6G (commonly used as a laser dye) was incorporated into the copolymer micelle during the templating process. In this way, novel dye-doped mesostructured titanium dioxide films were synthesised. The copolymer not only directs the film structure, but also provides a solubilizing environment suitable for sustaining a high monomer-to-aggregate ratio at elevated dye concentrations. The dye-doped films displayed optical thresholdlike behaviour characteristic of amplified spontaneous emission. Soft lithography was successfully applied to micropattern the dye-doped films. These results pave the way for the fabrication and demonstration of novel microlaser structures and other active optical structures. This new, high-refractive index, mesostructured, dye-doped material could also find applications in areas such as optical coatings, displays and integrated photonic devices.

Optical properties of metallic films for vertical-cavity optoelectronic devices

We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz-Drude (LD) and the Brendel-Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BE model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations. (C) 1998 Optical Society of America.

Quantum dynamics of spin polarized optoelectronic processes

We study the quantum dynamics of the emission of multimodal polarized light in light emitting devices (LED) due to spin polarized carriers injection. We present the equations for photon number and carrier numbers, and calculate the polarisation degree of the light generated by LED. (C) 2002 Elsevier Science B.V. All rights reserved.

Optoelectronic Digital Capture Device Based on Si/C Multilayer Heterostructures

Combined tunable WDM converters based on SiC multilayer photonic active filters are analyzed. The operation combines the properties of active long-pass and short-pass wavelength filter sections into a capacitive active band-pass filter. The sensor element is a multilayered heterostructure produced by PE-CVD. The configuration includes two stacked SiC p-i-n structures sandwiched between two transparent contacts. Transfer function characteristics are studied both theoretically and experimentally. Results show that optical bias activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal acting the device as an integrated photonic filter in the visible range. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. A numerical simulation and two building-blocks active circuit is presented and gives insight into the physics of the device.

Optoelectronic Logic Functions Based on Reconfigurable SiC Multilayer Devices

WDM multilayered SiC/Si devices based on a-Si:H and a-SiC:H filter design are approached from a reconfigurable point of view. Results show that the devices, under appropriated optical bias, act as reconfigurable active filters that allow optical switching and optoelectronic logic functions development. Under front violet irradiation the magnitude of the red and green channels are amplified and the blue and violet reduced. Violet back irradiation cuts the red channel, slightly influences the magnitude of the green and blue ones and strongly amplifies de violet channel. This nonlinearity provides the possibility for selective removal of useless wavelengths. Particular attention is given to the amplification coefficient weights, which allow taking into account the wavelength background effects when a band needs to be filtered from a wider range of mixed signals, or when optical active filter gates are used to select and filter input signals to specific output ports in WDM communication systems. A truth table of an encoder that performs 8-to-1 multiplexer (MUX) function is presented.

Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

This work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

MOVPE growth and characterisation of ZnO properties for optoelectronic applications

ZnO, Epitaxy, Metal organic vapor phase epitaxy, MOCVD, CVD, Semiconductor, Optoelectronics, X-ray diffraction, Cathodoluminescence, Microelectronics

Optoelectronic properties of CuPc thin films deposited at different substrate temperatures

Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, as can be observed by atomic force microscopy and x-ray diffraction spectroscopy, specifically in the grain size and features of the grains. The increase in the crystal phase with substrate temperature is shown by x-ray diffractometry. Optical absorption coefficient measured by photothermal deflection spectroscopy and optical transmittance reveal a weak dependence on the substrate temperature. Besides, the electro-optical response measured by the external quantum efficiency of Schottky ITO/CuPc/Al diodes shows an optimized response for samples deposited at a substrate temperature of 60 °C, in correspondence to the I-V diode characteristics.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Seeing smells: development of an optoelectronic nose

The development of an array of chemically-responsive dyes on a porous membrane and in its use as a general sensor for odors and volatile organic compounds (VOCs) is reviewed. These colorimetric sensor arrays (CSA) act as an "optoelectronic nose" by using an array of multiple dyes whose color changes are based on the full range of intermolecular interactions. The CSA is digitally imaged before and after exposure and the resulting difference map provides a digital fingerprint for any VOC or mixture of odorants. The result is an enormous increase in discriminatory power among odorants compared to prior electronic nose technologies. For the detection of biologically important analytes, including amines, carboxylic acids, and thiols, high sensitivities (ppbv) have been demonstrated. The array is essentially non-responsive to changes in humidity due to the hydrophobicity of the dyes and membrane.

Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Growth and characterization of nanostructured wide band gap semiconductors for optoelectronic applications

Department of Physics, Cochin University of Science and Technology

Investigations on some selected conducting polymers and polymer composites for possible optoelectronic applications

Department of Physics, Cochin University of Science and Technology

Control of bistability in a directly modulated semiconductor laser using delayed optoelectronic feedback

We show numerically that direct delayed optoelectronic feedback can suppress hysteresis and bistability in a directly modulated semiconductor laser. The simulation of a laser with feedback is performed for a considerable range of feedback strengths and delays and the corresponding values for the areas of the hysteresis loops are calculated. It is shown that the hysteresis loop completely vanishes for certain combinations of these parameters. The regimes for the disappearance of bistability are classified globally. Different dynamical states of the laser are characterized using bifurcation diagrams and time series plots.

Chaotic Dynamics of Semiconductor Laser with Current Modulation and optoelectronic feedback

Chaotic dynamics of directly modulated semiconductor lasers have been studied extensively over the last two decades because of their application in secure optical communication. However, chaos is generally suppressed in such systems when the nonlinear gain reduction factor is above 0.01 which is very much smaller than the reported values in semiconductors like InGaAsP. In this paper we show that by giving an optoelectronic feedback with appropriate delay one can increase the range of the values of the gain reduction factor for which chaos can be observed. Numerical studies show that negative feedback is more efficient in producing chaotic dynamics.