951 resultados para master oscillator power amplifier


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This paper reports a monolithically integrated mode-locked narrow stripe QD MOPA operating at 1300nm generating a stable 20GHz pulse train with an average power of 46.4mW and a pulse duration of 8.3ps. © Optical Society of America.

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We present an experimental study on the generation of high-peak-power short optical pulses from a fully integrated master-oscillator power-amplifier emitting at 1.5 μm. High-peak-power (2.7 W) optical pulses with short duration (100 ps) have been generated by gain switching the master oscillator under optimized driving conditions. The static and dynamic characteristics of the device have been studied as a function of the driving conditions. The ripples appearing in the power-current characteristics under cw conditions have been attributed to mode hopping between the master oscillator resonant mode and the Fabry-Perot modes of the entire device cavity. Although compound cavity effects have been evidenced to affect the static and dynamic performance of the device, we have demonstrated that trains of single-mode short optical pulses at gigahertz frequencies can be conveniently generated in these devices.

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We study experimentally the dynamic properties of a fully integrated high power master-oscillator power-amplifier emitting at 1.5 μm under continuous wave and gain-switching conditions. High peak power (2.7 W) optical pulses with short duration (~ 110 ps) have been generated by gain switching the master-oscillator. We show the existence of working points at very close driving conditions with stable or unstable regimes caused by the compound cavity effects. The optical and radio-frequency spectra of stable and unstable operating points are analyzed.

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The optical and radio-frequency spectra of a monolithic master-oscillator power-amplifier emitting at 1.5 ?m have been analyzed in a wide range of steady-state injection conditions. The analysis of the spectral maps reveals that, under low injection current of the master oscillator, the device operates in two essentially different operation modes depending on the current injected into the amplifier section. The regular operation mode with predominance of the master oscillator alternates with lasing of the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these two regimes as a function of the amplifier current has been consistently interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes.

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Integrated master-oscillator power amplifiers driven under steady-state injection conditions are known to show a complex dynamics resulting in a variety of emission regimes. We present experimental results on the emission characteristics of a 1.5 µm distributed feedback tapered master-oscillator power-amplifier in a wide range of steady-state injection conditions, showing different dynamic behaviors. The study combines the optical and radio-frequency spectra recorded under different levels of injected current into the master oscillator and the power amplifier sections. Under low injection current of the master oscillator the correlation between the optical and radio-frequency spectral maps allows to identify operation regimes in which the device emission arises from either the master oscillator mode or from the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these emission regimes as a function of the amplifier current is interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes. Under high injection current of the masteroscillator, two different regimes alternate quasi-periodically as a function of the injected current in the power amplifier: a stable regime with a single mode emission at the master oscillator frequency, and an unstable and complex self-pulsating regime showing strong peaks in the radio-frequency spectra as well as multiple frequencies in the optical spectra.

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Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

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A broadly tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source is demonstrated, consisting of an external cavity passively mode-locked laser diode with a tapered semiconductor amplifier. By employing chirped quantum-dot structures on both the oscillator's gain chip and amplifier, a wide tunability range between 1187 and 1283 nm is achieved. Under mode-locked operation, the highest output peak power of 4.39 W is achieved from the MOPA, corresponding to a peak power spectral density of 31.4 dBm/nm. © 1989-2012 IEEE.

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A tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source using all chirped quantum dot (QD) structures is demonstrated (60nm tunability). Under fundamental mode-locked operation, the highest peak power of 4.39 W is achieved.

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We present a power-scalable approach for yellow laser-light generation based on standard Ytterbium (Yb) doped fibers. To force the cavity to lase at 1154 nm, far above the gain-maximum, measures must be taken to fulfill lasing condition and to suppress competing amplified spontaneous emission (ASE) in the high-gain region. To prove the principle we built a fiber-laser cavity and a fiber-amplifier both at 1154 nm. In between cavity and amplifier we suppressed the ASE by 70 dB using a fiber Bragg grating (FBG) based filter. Finally we demonstrated efficient single pass frequency doubling to 577 nm with a periodically poled lithium niobate crystal (PPLN). With our linearly polarized 1154 nm master oscillator power fiber amplifier (MOFA) system we achieved slope efficiencies of more than 15 % inside the cavity and 24 % with the fiber-amplifier. The frequency doubling followed the predicted optimal efficiency achievable with a PPLN crystal. So far we generated 1.5 W at 1154nm and 90 mW at 577 nm. Our MOFA approach for generation of 1154 nm laser radiation is power-scalable by using multi-stage amplifiers and large mode-area fibers and is therefore very promising for building a high power yellow laser-light source of several tens of Watt.

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We experimentally study the generation and amplification of stable picosecond-short optical pulses by a master oscillator power-amplifier configuration consisting of a monolithic quantum-dot-based gain-guided tapered laser and amplifier emitting at 1.26 μm without pulse compression, external cavity, gain-or Q-switched operation. We report a peak power of 42 W and a figure-of-merit for second-order nonlinear imaging of 38.5 W2 at a repetition rate of 16 GHz and an associated pulse width of 1.37 ps.

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In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

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The present study discusses the photosensitivity of GeS2 chalcogenide glass in response to irradiation with femtosecond pulses at 1047 nm. Bulk GeS2 glasses are prepared by conventional melt quenching technique and the amorphous nature of the glass is confirmed using X-ray diffraction. Ultrafast laser inscription technique is used to fabricate the straight channel waveguides in the glass. Single scan and multi scan waveguides are inscribed in GeS2 glasses of length 0.65 cm using a master oscillator power amplifier Yb doped fiber laser (IMRA mu jewel D400) with different pulse energy and translation speed. Diameters of the inscribed waveguides are measured and its dependence on the inscription parameters such as translation speed and pulse energy is studied. Butt coupling method is used to characterize the loss measurement of the inscribed optical waveguides. The mode field image of the waveguides is captured using CCD camera and compared with the mode field image of a standard SMF-28 fibers.