On some Sufficient Conditions for High Breakdown Point of ML Estimators

High breakdown point estimators LME(k) and LT E(k) for location and scale are obtained for symmetrical exponentially decreasing density family.

ROBREG: Stata module providing robust regression estimators

robreg provides a number of robust estimators for linear regression models. Among them are the high breakdown-point and high efficiency MM-estimator, the Huber and bisquare M-estimator, and the S-estimator, each supporting classic or robust standard errors. Furthermore, basic versions of the LMS/LQS (least median of squares) and LTS (least trimmed squares) estimators are provided. Note that the moremata package, also available from SSC, is required.

The role of goal importance in predicting university students’ high academic performance

We examined goal importance, focusing on high, but not exclusive priority goals, in the theory of planned behaviour (TPB) to predict students’ academic performance. At the beginning of semester, students in a psychology subject (N = 197) completed TPB and goal importance items for achieving a high grade. Regression analyses revealed partial support for the TPB. Perceived behavioural control, but not attitude or subjective norm, significantly predicted intention, with intention predicting final grade. Goal importance significantly predicted intention, but not final grade, indicating that perceiving a performance goal as highly, but not necessarily exclusively, important impacts on students’ achievement intentions.

Least Median Of Squares Estimation In Power Systems

Static state estimators currently in use in power systems are prone to masking by multiple bad data. This is mainly because the power system regression model contains many leverage points; typically they have a cluster pattern. As reported recently in the statistical literature, only high breakdown point estimators are robust enough to cope with gross errors corrupting such a model. This paper deals with one such estimator, the least median of squares estimator, developed by Rousseeuw in 1984. The robustness of this method is assessed while applying it to power systems. Resampling methods are developed, and simulation results for IEEE test systems discussed. © 1991 IEEE.

Thin nanoporous metal-insulator-metal membranes

Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 × 107 V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 × 106 V/cm; sufficient for ionization of wide range of molecules. These metal–insulator–metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

A neurofuzzy network knowledge extraction and extended gram-Schmidt algorithm for model subspace decomposition

This paper introduces a new neurofuzzy model construction and parameter estimation algorithm from observed finite data sets, based on a Takagi and Sugeno (T-S) inference mechanism and a new extended Gram-Schmidt orthogonal decomposition algorithm, for the modeling of a priori unknown dynamical systems in the form of a set of fuzzy rules. The first contribution of the paper is the introduction of a one to one mapping between a fuzzy rule-base and a model matrix feature subspace using the T-S inference mechanism. This link enables the numerical properties associated with a rule-based matrix subspace, the relationships amongst these matrix subspaces, and the correlation between the output vector and a rule-base matrix subspace, to be investigated and extracted as rule-based knowledge to enhance model transparency. The matrix subspace spanned by a fuzzy rule is initially derived as the input regression matrix multiplied by a weighting matrix that consists of the corresponding fuzzy membership functions over the training data set. Model transparency is explored by the derivation of an equivalence between an A-optimality experimental design criterion of the weighting matrix and the average model output sensitivity to the fuzzy rule, so that rule-bases can be effectively measured by their identifiability via the A-optimality experimental design criterion. The A-optimality experimental design criterion of the weighting matrices of fuzzy rules is used to construct an initial model rule-base. An extended Gram-Schmidt algorithm is then developed to estimate the parameter vector for each rule. This new algorithm decomposes the model rule-bases via an orthogonal subspace decomposition approach, so as to enhance model transparency with the capability of interpreting the derived rule-base energy level. This new approach is computationally simpler than the conventional Gram-Schmidt algorithm for resolving high dimensional regression problems, whereby it is computationally desirable to decompose complex models into a few submodels rather than a single model with large number of input variables and the associated curse of dimensionality problem. Numerical examples are included to demonstrate the effectiveness of the proposed new algorithm.

Bacterial sterilization by a dielectric barrier discharge (DBD) in air

Cold atmospheric plasma treatment of microorganisms and living tissues has become a popular topic in modern plasma physics and in medical science. The plasma is capable of bacterial inactivation and noninflammatory tissue modification, which makes it an attractive tool for treatment of skin diseases, open injuries and dental caries. Because of their enhanced plasma chemistry, Dielectric Barrier Discharges (DBDs) have been widely investigated for some emerging applications such as biological and chemical decontamination of media at ambient conditions. Despite the high breakdown voltage in air at atmospheric pressure, the average current of DBD discharges is low. Therefore, a DBD can be applied in direct contact with biological objects without causing any damage. In this work a 60 Hz DBD reactor, which generates cold atmospheric plasma inside Petri dishes with bacterial culture, is investigated. Samples of Staphylococcus aureus, a Gram-positive bacterium and Escherichia coil a Gram-negative bacterium were selected for this study. The bacterial suspensions were evenly spread on agar media planted in Petri dishes. The reactor electrodes were placed outside the Petri dish, thus eliminating the risk of samples microbial contamination. The covered Petri dish with agar medium in it serves as dielectric barrier during the treatment. The plasma processing was conducted at same discharge power (similar to 1.0 W) with different exposure time. Sterilization of E. coil and S. aureus was achieved for less than 20 min. Plasma induced structural damages of bacteria were investigated by Scanning Electron Microscopy. (C) 2010 Elsevier B.V. All rights reserved.

Extração e caracterização de amido de jacatupé (Pachyrhizus ahipa)

O gênero Pachyrhizus tem sido estudado como fonte de matéria-prima amilácea devido ao considerável teor de amido nas raízes de suas espécies. Neste trabalho objetivou-se caracterizar raízes de P. ahipa, processar em laboratório para a extração do amido e analisá-lo quanto à composição centesimal, teor de amilose, formato e tamanho de grânulos em microscópio eletrônico de varredura e viscosidade das pastas (RVA). As raízes de P. ahipa apresentaram 18% de massa seca sendo 7,68% amido. O rendimento obtido de amido foi baixo (4,28%), apontando para a necessidade de estudos que melhorem o processo de extração. O produto obtido apresentou 12,3% de umidade, 84% de amido com 13% de amilose e baixos teores de outros componentes (base úmida). A análise em microscópio eletrônico de varredura mostrou grânulos de amido de formas circular e poligonal, com tamanho variando entre 10 e 25mm. O perfil de viscosidade apresentado por este amido mostrou baixa temperatura de pasta (56ºC) e pico de viscosidade a 272 RVU, estando este último valor próximo ao observado para amido de mandioca, sob as mesmas condições. O amido de P. ahipa apresentou ainda, baixa estabilidade da pasta a quente e tendência à retrogradação com o resfriamento.