Polarisation mode dispersion induced transmission penalties for long-haul high speed optical communication systems

Results of full numerical simulations of a guiding-centre soliton system with randomly birefringent SMF fibre are shown and analysed. It emerges that the soliton system becomes unstable even for small amounts of PMD.

Holistic Design In High-Speed Optical Interconnects

Integrated circuit scaling has enabled a huge growth in processing capability, which necessitates a corresponding increase in inter-chip communication bandwidth. As bandwidth requirements for chip-to-chip interconnection scale, deficiencies of electrical channels become more apparent. Optical links present a viable alternative due to their low frequency-dependent loss and higher bandwidth density in the form of wavelength division multiplexing. As integrated photonics and bonding technologies are maturing, commercialization of hybrid-integrated optical links are becoming a reality. Increasing silicon integration leads to better performance in optical links but necessitates a corresponding co-design strategy in both electronics and photonics. In this light, holistic design of high-speed optical links with an in-depth understanding of photonics and state-of-the-art electronics brings their performance to unprecedented levels. This thesis presents developments in high-speed optical links by co-designing and co-integrating the primary elements of an optical link: receiver, transmitter, and clocking.

In the first part of this thesis a 3D-integrated CMOS/Silicon-photonic receiver will be presented. The electronic chip features a novel design that employs a low-bandwidth TIA front-end, double-sampling and equalization through dynamic offset modulation. Measured results show -14.9dBm of sensitivity and energy efficiency of 170fJ/b at 25Gb/s. The same receiver front-end is also used to implement source-synchronous 4-channel WDM-based parallel optical receiver. Quadrature ILO-based clocking is employed for synchronization and a novel frequency-tracking method that exploits the dynamics of IL in a quadrature ring oscillator to increase the effective locking range. An adaptive body-biasing circuit is designed to maintain the per-bit-energy consumption constant across wide data-rates. The prototype measurements indicate a record-low power consumption of 153fJ/b at 32Gb/s. The receiver sensitivity is measured to be -8.8dBm at 32Gb/s.

Next, on the optical transmitter side, three new techniques will be presented. First one is a differential ring modulator that breaks the optical bandwidth/quality factor trade-off known to limit the speed of high-Q ring modulators. This structure maintains a constant energy in the ring to avoid pattern-dependent power droop. As a first proof of concept, a prototype has been fabricated and measured up to 10Gb/s. The second technique is thermal stabilization of micro-ring resonator modulators through direct measurement of temperature using a monolithic PTAT temperature sensor. The measured temperature is used in a feedback loop to adjust the thermal tuner of the ring. A prototype is fabricated and a closed-loop feedback system is demonstrated to operate at 20Gb/s in the presence of temperature fluctuations. The third technique is a switched-capacitor based pre-emphasis technique designed to extend the inherently low bandwidth of carrier injection micro-ring modulators. A measured prototype of the optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit based on the monolithic PTAT sensor consumes 0.29mW.

Lastly, a first-order frequency synthesizer that is suitable for high-speed on-chip clock generation will be discussed. The proposed design features an architecture combining an LC quadrature VCO, two sample-and-holds, a PI, digital coarse-tuning, and rotational frequency detection for fine-tuning. In addition to an electrical reference clock, as an extra feature, the prototype chip is capable of receiving a low jitter optical reference clock generated by a high-repetition-rate mode-locked laser. The output clock at 8GHz has an integrated RMS jitter of 490fs, peak-to-peak periodic jitter of 2.06ps, and total RMS jitter of 680fs. The reference spurs are measured to be –64.3dB below the carrier frequency. At 8GHz the system consumes 2.49mW from a 1V supply.

Simulation and Design of a high speed Solid State Switch for Excimer Laser

Excimerlaser sind gepulste Gaslaser, die Laseremission in Form von Linienstrahlung – abhängig von der Gasmischung – im UV erzeugen. Der erste entladungsgepumpte Excimerlaser wurde 1977 von Ischenko demonstriert. Alle kommerziell verfügbaren Excimerlaser sind entladungsgepumpte Systeme. Um eine Inversion der Besetzungsdichte zu erhalten, die notwendig ist, um den Laser zum Anschwingen zu bekommen, muss aufgrund der kurzen Wellenlänge sehr stark gepumpt werden. Diese Pumpleistung muss von einem Impulsleistungsmodul erzeugt werden. Als Schaltelement gebräuchlich sind Thyratrons, Niederdruckschaltröhren, deren Lebensdauer jedoch sehr limitiert ist. Deshalb haben sich seit Mitte der 1990iger Jahre Halbleiterschalter mit Pulskompressionsstufen auch in dieser Anwendung mehr und mehr durchgesetzt. In dieser Arbeit wird versucht, die Pulskompression durch einen direkt schaltenden Halbleiterstapel zu ersetzen und dadurch die Verluste zu reduzieren sowie den Aufwand für diese Pulskompression einzusparen. Zudem kann auch die maximal mögliche Repetitionsrate erhöht werden. Um die Belastung der Bauelemente zu berechnen, wurden für alle Komponenten möglichst einfache, aber leistungsfähige Modelle entwickelt. Da die normalerweise verfügbaren Daten der Bauelemente sich aber auf andere Applikationen beziehen, mussten für alle Bauteile grundlegende Messungen im Zeitbereich der späteren Applikation gemacht werden. Für die nichtlinearen Induktivitäten wurde ein einfaches Testverfahren entwickelt um die Verluste bei sehr hohen Magnetisierungsgeschwindigkeiten zu bestimmen. Diese Messungen sind die Grundlagen für das Modell, das im Wesentlichen eine stromabhängige Induktivität beschreibt. Dieses Modell wurde für den „magnetic assist“ benützt, der die Einschaltverluste in den Halbleitern reduziert. Die Impulskondensatoren wurden ebenfalls mit einem in der Arbeit entwickelten Verfahren nahe den späteren Einsatzparametern vermessen. Dabei zeigte sich, dass die sehr gebräuchlichen Class II Keramikkondensatoren für diese Anwendung nicht geeignet sind. In der Arbeit wurden deshalb Class I Hochspannungs- Vielschicht- Kondensatoren als Speicherbank verwendet, die ein deutlich besseres Verhalten zeigen. Die eingesetzten Halbleiterelemente wurden ebenfalls in einem Testverfahren nahe den späteren Einsatzparametern vermessen. Dabei zeigte sich, dass nur moderne Leistungs-MOSFET´s für diesen Einsatz geeignet sind. Bei den Dioden ergab sich, dass nur Siliziumkarbid (SiC) Schottky Dioden für die Applikation einsetzbar sind. Für die Anwendung sind prinzipiell verschiedene Topologien möglich. Bei näherer Betrachtung zeigt sich jedoch, dass nur die C-C Transfer Anordnung die gewünschten Ergebnisse liefern kann. Diese Topologie wurde realisiert. Sie besteht im Wesentlichen aus einer Speicherbank, die vom Netzteil aufgeladen wird. Aus dieser wird dann die Energie in den Laserkopf über den Schalter transferiert. Aufgrund der hohen Spannungen und Ströme müssen 24 Schaltelemente in Serie und je 4 parallel geschaltet werden. Die Ansteuerung der Schalter wird über hochisolierende „Gate“-Transformatoren erreicht. Es zeigte sich, dass eine sorgfältig ausgelegte dynamische und statische Spannungsteilung für einen sicheren Betrieb notwendig ist. In der Arbeit konnte ein Betrieb mit realer Laserkammer als Last bis 6 kHz realisiert werden, der nur durch die maximal mögliche Repetitionsrate der Laserkammer begrenzt war.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications

In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers. The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due to smaller lattice mismatch the formation of circular QDs, elongated QDs and quantum wires is possible. The influence of the different growth conditions, such as the growth temperature, beam equivalent pressure, amount of deposited material on the formation of the QDs is investigated. It was already demonstrated that the formation process of QDs can be changed by the arsenic species. The formation of more round shaped QDs was observed during the growth of QDs with As2, while for As4 dash-like QDs. In this work only As2 was used for the QD growth. Different growth parameters were investigated to optimize the optical properties, like photoluminescence linewidth, and to implement those QD ensembles into laser structures as active medium. By the implementation of those QDs into laser structures a full width at half maximum (FWHM) of 30 meV was achieved. Another part of the research includes the investigation of the influence of the layer design of lasers on its lasing properties. QD lasers were demonstrated with a modal gain of more than 10 cm-1 per QD layer. Another achievement is the large signal modulation with a maximum data rate of 15 Gbit/s. The implementation of optimized QDs in the laser structure allows to increase the modal gain up to 12 cm-1 per QD layer. A reduction of the waveguide layer thickness leads to a shorter transport time of the carriers into the active region and as a result a data rate up to 22 Gbit/s was achieved, which is so far the highest digital modulation rate obtained with any 1.55 µm QD laser. The implementation of etch stop layers into the laser structure provide the possibility to fabricate feedback gratings with well defined geometries for the realization of DFB lasers. These DFB lasers were fabricated by using a combination of dry and wet etching. Single mode operation at 1.55 µm with a high side mode suppression ratio of 50 dB was achieved.

High-speed acousto-optic shutter with no optical frequency shift

Acousto-optic modulators are widely used for rapid switching and shuttering of laser beams. In many applications, the concomitant frequency shift is undesirable and must be compensated for elsewhere in the system. Here we present a simple method of achieving rapid laser power switching without an accompanying laser frequency shift. The demonstrated acousto-optic shutter achieves a switching time of around 25 ns, an extinction ratio of 46 dB, and efficiency comparable to a conventional double-pass acousto-optical modulator configuration. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746292]

Fiber optical parametric amplifier in high-speed WDM networks

We report high-capacity (> 1 Tb/s) amplification by a fiber optical parametric amplifier in different roles displaying compatibility and versatility in future WDM networks with phase-shift keying modulation format.

Fiber optical parametric amplifier in high-speed WDM networks

We report high-capacity (> 1 Tb/s) amplification by a fiber optical parametric amplifier in different roles displaying compatibility and versatility in future WDM networks with phase-shift keying modulation format.

AMB system for high-speed motors using automatic commissioning

The general trend towards increasing e ciency and energy density drives the industry to high-speed technologies. Active Magnetic Bearings (AMBs) are one of the technologies that allow contactless support of a rotating body. Theoretically, there are no limitations on the rotational speed. The absence of friction, low maintenance cost, micrometer precision, and programmable sti ness have made AMBs a viable choice for highdemanding applications. Along with the advances in power electronics, such as signi cantly improved reliability and cost, AMB systems have gained a wide adoption in the industry. The AMB system is a complex, open-loop unstable system with multiple inputs and outputs. For normal operation, such a system requires a feedback control. To meet the high demands for performance and robustness, model-based control techniques should be applied. These techniques require an accurate plant model description and uncertainty estimations. The advanced control methods require more e ort at the commissioning stage. In this work, a methodology is developed for an automatic commissioning of a subcritical, rigid gas blower machine. The commissioning process includes open-loop tuning of separate parts such as sensors and actuators. The next step is to apply a system identi cation procedure to obtain a model for the controller synthesis. Finally, a robust model-based controller is synthesized and experimentally evaluated in the full operating range of the system. The commissioning procedure is developed by applying only the system components available and a priori knowledge without any additional hardware. Thus, the work provides an intelligent system with a self-diagnostics feature and an automatic commissioning.

Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings

High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.

Comparative Histopathological Analysis of Human Pulps after Class I Cavity Preparation with a High-Speed Air-Turbine Handpiece or Er:YAG Laser

The purpose of this study was to comparatively evaluate the response of human pulps after cavity preparation with different devices. Deep class I cavities were prepared in sound mandibular premolars using either a high-speed air-turbine handpiece (Group 1) or an Er: YAG laser (Group 2). Following total acid etching and the application of an adhesive system, all cavities were restored with composite resin. Fifteen days after the clinical procedure, the teeth were extracted and processed for analysis under optical microscopy. In Group 1 in which the average for the remaining dentin thickness (RDT) between the cavity floor and the coronal pulp was 909.5 mu m, a discrete inflammatory response occurred in only one specimen with an RDT of 214 mu m. However, tissue disorganization occurred in most specimens. In Group 2 (average RDT = 935.2 mu m), the discrete inflammatory pulp response was observed in only one specimen (average RDT = 413 mu m). It may be concluded that the high-speed air-turbine handpiece caused greater structural alterations in the pulp, although without inducing inflammatory processes.

Comparative Histopathological Analysis of Human Pulps after Class I Cavity Preparation with a High-Speed Air-Turbine Handpiece or Er:YAG Laser

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

High-Speed Laser Processing of Thin Single and Multi-Layer Films

Theoretical models are developed for the continuous-wave and pulsed laser incision and cut of thin single and multi-layer films. A one-dimensional steady-state model establishes the theoretical foundations of the problem by combining a power-balance integral with heat flow in the direction of laser motion. In this approach, classical modelling methods for laser processing are extended by introducing multi-layer optical absorption and thermal properties. The calculation domain is consequently divided in correspondence with the progressive removal of individual layers. A second, time-domain numerical model for the short-pulse laser ablation of metals accounts for changes in optical and thermal properties during a single laser pulse. With sufficient fluence, the target surface is heated towards its critical temperature and homogeneous boiling or "phase explosion" takes place. Improvements are seen over previous works with the more accurate calculation of optical absorption and shielding of the incident beam by the ablation products. A third, general time-domain numerical laser processing model combines ablation depth and energy absorption data from the short-pulse model with two-dimensional heat flow in an arbitrary multi-layer structure. Layer removal is the result of both progressive short-pulse ablation and classical vaporisation due to long-term heating of the sample. At low velocity, pulsed laser exposure of multi-layer films comprising aluminium-plastic and aluminium-paper are found to be characterised by short-pulse ablation of the metallic layer and vaporisation or degradation of the others due to thermal conduction from the former. At high velocity, all layers of the two films are ultimately removed by vaporisation or degradation as the average beam power is increased to achieve a complete cut. The transition velocity between the two characteristic removal types is shown to be a function of the pulse repetition rate. An experimental investigation validates the simulation results and provides new laser processing data for some typical packaging materials.