Photograph of Young Woman by R. F. Uren, Photographer, St. Catharines [n.d.]

Undated black and white cabinet card portrait of an unidentified young woman. This photograph was taken by R. F. Uren whose studio was located at 79 St. Paul St., St. Catharines, Ontario. This item was among the memorabilia in the possession of the Rick Bell family of St. Catharines. Relatives of the Bell family are descended from former Black slaves from the United States.Richard Frank (R.F.) Uren was a photographer in St. Catharines from 1886-1895. Source: Phillips, Glen C. The Ontario photographers list (1851-1900). Sarnia: Iron Gate Publishing Co., 1990.

Photograph of Two Girls by R. F. Uren, Photographer, St. Catharines [n.d.]

Two unidentified girls are featured in this black and white cabinet card style photograph by R. F. Uren, of St. Catharines. The photograph is not dated, however, the address of the photographer is printed at the bottom of the cabinet card. This photograph was in the possession of Iris Sloman Bell, of St. Catharines, Ontario. The Sloman - Bell family descendants include former African American slaves who settled in Canada.Richard Frank (R.F.) Uren was a photographer in St. Catharines from 1886-1895. Source: Phillips, Glen C. The Ontario photographers list (1851-1900). Sarnia: Iron Gate Publishing Co., 1990. "Cabinet card photographs were first introduced in 1866. They were initially employed for landscapes rather than portraitures. Cabinet cards replaced Carte de visite photographs as the popular mode of photography. Cabinet cards became the standard for photographic portraits in 1870. Cabinet cards experienced their peak in popularity in the 1880's. Cabinet cards were still being produced in the United States until the early 1900's and continued to be produced in Europe even longer. The best way to describe a cabinet card is that it is a thin photograph that is mounted on a card that measures 4 1/4″ by 6 1/2″. Cabinet cards frequently have artistic logos and information on the bottom or the reverse of the card which advertised the photographer or the photography studio's services." Source: http://cabinetcardgallery.wordpress.com/category/cabinet-card-history/

Minjaṭuren un stzenes

Digitalisat der Ausg.

Guatemala-Honduras boundary arbitration; reply of Guatemala to the counter case of Honduras submitted to the Arbitral tribunal composed of: the Hon. Charles Evans Hughes, chief justice of the United States of America; Hon. Luis Castro Ureña, from Costa Rica; Hon. Emilio Bello Codesdido, from Chile. Under treaty of July 16, 1930.

"Annex number 189. Report relating to the construction of the hypsometric map of the republic of Guatemala drawn under the supervision of the engineering staff of the Guatemala boundary commission, by order of the government of the republic": p. 178-183. Signed: Guatemala, September 29, 1928. Claudio Urrutia.

Discursos leídos ante la Real academia de la historia en la recepción pública de Rafael de Ureña y Smenjaud, el día 24 de enero de 1909 ...

Discurso de recepción: Ureña, Rafael de. Una edición inédita de las Leges gothorum regum preparada por Diego y Antonio de Covarruvias, en la segunda mitad del siglo XVI. Necrología del excmo. sr. d. José Gómez de Arteche.--Discurso de contestación: Oliver, Bienvenido. Observaciones histórico-étnicas sobre la composición de la raza española.

Die Säuren der Rindergalle und der Menschengalle,

Mode of access: Internet.

Nieuwe kaart van Muskovie of Rusland, na de laatste ondekking int licht gebracht te Amsterdam by Isaak Tirion.

[N. 1:1110000].

Perfil de distribuição de erros refracionais no sul do centro-oeste do estado de São Paulo e seu impacto na acuidade visual: estudo de base populacional. -

Pós-graduação em Bases Gerais da Cirurgia - FMB

Influence of uncorrected refractive error and unmet refractive error on visual impairment in a Brazilian population

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Cloning and expression of apoptosis inhibitory protein homologs that function to inhibit apoptosis and/or bind tumor necrosis factor receptor-associated factors.

Baculovirus inhibitors of apoptosis (IAPs) act in insect cells to prevent cell death. Here we describe three mammalian homologs of IAP, MIHA, MIHB, and MIHC, and a Drosophila IAP homolog, DIHA. Each protein bears three baculovirus IAP repeats and an N-terminal ring finger motif. Apoptosis mediated by interleukin 1beta converting enzyme (ICE), which can be inhibited by Orgyia pseudotsugata nuclear polyhedrosis virus IAP (OpIAP) and cowpox virus crmA, was also inhibited by MIHA and MIHB. As MIHB and MIHC were able to bind to the tumor necrosis factor receptor-associated factors TRAF1 and TRAF2 in yeast two-hybrid assays, these results suggest that IAP proteins that inhibit apoptosis may do so by regulating signals required for activation of ICE-like proteases.

En la orilla mi Espanã.

"Erratas mas notables" slip inserted.

Los optimistas Lecturas y opiniones, Crítica de arte.

UF copy defective-pages after p.384 are lacking.