High-order asymptotic field of tensile plane-strain nonlinear crack problems

In this paper, the governing equations and the analytical method of the secondorder asymptotic field for the plane-straln crack problems of mode I have been presented. The numerical calculation has been carried out. The amplitude coefficients k2 of the second term of the asymptotic field have been determined after comparing the present results with some fine results of the finite element calculation. The variation of coefficients k2 with changes of specimen geometry and developments of plastic zone have been analysed. It is shown that the second term of the asymptotic field has significant influence on the near-crack-tip field. Therefore, we may reasonably argue that both the J-integral and the coefficient k2 can beeome two characterizing parameters for crack initiation.

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2

The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain opens up a variety of applications in the emerging area of straintronics. Using first-principles-based density functional theory calculations, we show that the band gap of a few layers of MoS2 can be tuned by applying normal compressive (NC) strain, biaxial compressive (BC) strain, and biaxial tensile (BT) strain. A reversible semiconductor-to-metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which the S-M transition occurs increases when the number of layers increase and becomes maximum for the bulk. On the other hand, the threshold strain for the S-M transition in both BC and BT strains decreases when the number of layers increase. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of both strain type and the number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of the number of layers and the applied strain. 3L- and 2L-MoS2 emerge as the most efficient thermoelectric materials under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison among the feasibility of these three types of strain is also discussed.

Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO3 films

The influence of both compressive and tensile epitaxial strain along with the electrical boundary conditions on the ferroelastic and ferroelectric domain patterns of bismuth ferrite films was studied. BiFeO3 films were grown on SrTiO3(001), DyScO3(110), GdScO3(110), and SmScO3(110) substrates to investigate the effect of room temperature in-plane strain ranging from -1.4% to +0.75%. Piezoresponse force microscopy, transmission electron microscopy, x-ray diffraction measurements, and ferroelectric polarization measurements were performed to study the properties of the films. We show that BiFeO3 films with and without SrRuO3 bottom electrode have different growth mechanisms and that in both cases reduction of the domain variants is possible. Without SrRuO3, stripe domains with reduced variants are formed on all rare earth scandate substrates because of their monoclinic symmetry. In addition, tensile strained films exhibit a rotation of the unit cell with increasing film thickness. On the other side, the presence of SrRuO3 promotes step flow growth of BiFeO3. In case of vicinal SrTiO3 and DyScO3 substrates with high quality SrRuO3 bottom electrode and a low miscut angle of approximate to 0.15 degrees we observed suppression of the formation of certain domain variants. The quite large in-plane misfit of SrRuO3 with GdScO3 and SmScO3 prevents the growth of high quality SrRuO3 films and subsequent domain variants reduction in BiFeO3 on these substrates, when SrRuO3 is used as a bottom electrode.

Modeling the growth of LT and TL-oriented fatigue cracks in longitudinally and transversely pre-strained Al 2524-T3 alloy

The aluminum alloy 2524 (Al-Cu-Mg) was developed during the 90s mainly to be employed in aircraft fuselage panels, replacing the standard Al 2024. In the present analysis the fatigue crack growth (FCG) behavior of 2524-T3 was investigated, regarding the influence of three parameters: load ratio, pre strain and crack plane orientation of the material. The pre strain of aluminum alloys is usually performed in order to obtain a more homogeneous precipitates distribution, accompanied by an increase in the yield strength. In this work, it was evaluated the resistance of Al 2524-T3 sheet samples to the fatigue crack growth, having L-T and T-L crack orientations. FCG tests were performed under constant amplitude loading at three distinct positive load ratios. The three material conditions were tested: as received(AR), pre strained longitudinally (SL) and transversally (ST) in relation to rolling direction. In order to describe FCG behavior, two-parameter kinetic equations were compared: a Paris-type potential model and a new exponential equation introduced in a previous work conducted by our research group. It was observed that the exponential model, which takes into account the deviations from linearity presented by da/dN versus AK data, describes more adequately the FCG behavior of Al 224-T3 in relation to load ratio, pre strain effects and crack plane orientation. © 2011 Published by Elsevier Ltd.

Estudo do envelhecimento após deformação em um aço complex phase

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Numerical analysis of shape transition in graphene nanoribbons

Graphene nanoribbon (GNR) with free edges can exhibit non-flat morphologies due to pre-existing edge stress. Using molecular dynamics (MD) simulations, we investigate the free-edge effect on the shape transition in GNRs with different edge types, including regular (armchair and zigzag), armchair terminated with hydrogen and reconstructed armchair. The results show that initial edge stress and energy are dependent on the edge configurations. It is confirmed that pre-strain on the free edges is a possible way to limit the random shape transition of GNRs. In addition, the influence of surface attachment on the shape transition is also investigated in this work. It is found that surface attachment can lead to periodic ripples in GNRs, dependent on the initial edge configurations.

Beneficial defects : exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain.

Effect of recrystallization and grain growth on the mechanical properties of an extruded AZ21 Mg alloy

An experimental investigation into the effect of microstructural changes, which occur during post-extrusion annealing of a Mg based AZ21 alloy, on tensile and fatigue properties is conducted. Mechanical properties in the as-cast, as-extruded, and microstructural states that correspond to recovery, recrystallization and grain growth stages of annealing are compared. Results show that these microstructural changes do not alter the yield strength of the alloy markedly whereas significant differences were noted in the ultimate tensile strength as well as ductility. The initiation of abnormal grain growth (or secondary recrystallization) renders the tensile stress-strain response elastic perfectly plastic and results in a large drop in ductility, as high as similar to 60% during intermediate stages of abnormal grain growth, vis-A-vis the ductility of the as-extruded alloy. While the fatigue performance of all the wrought alloys is far superior to as expected, abnormal grain growth leads to a marked decrease in the endurance that of the as-cast alloy, limit. Possible microscopic origins of these are discussed. (C) 2009 Elsevier B.V. All rights reserved.

Variational Asymptotic Analysis of a Self-healing SMA Composite

A Shape Memory Alloy (SMA) wire reinforced composite shell structure is analyzed for self-healing characteristic using Variational Asymptotic Method (VAM). SMA behavior is modeled using a onedimensional constitutive model. A pre-notched specimen is loaded longitudinally to simulate crack propagation. The loading process is accompanied by martensitic phase transformation in pre-strained SMA wires, bridging the crack. To heal the composite, uniform heating is required to initiate reverse transformation in the wires and bringing the crack faces back into contact. The pre-strain in the SMA wires used for reinforcement, causes a closure force across the crack during reverse transformation of the wires under heating. The simulation can be useful in design of self-healing composite structures using SMA. Effect of various parameters, like composite and SMA material properties and the geometry of the specimen, on the cracking and self-healing can also be studied.

The influence of peel angle on the mechanics of peeling flexible adherends with arbitrary load-extension characteristics

The peel test is commonly used to determine the strength of adhesive joints. In its simplest form, a thin flexible strip which has been bonded to a rigid surface is peeled from the substrate at a constant rate and the peeling force which is applied to the debonding surfaces by the tension in the tape is measured. Peeling can be carried out with the peel angle, i.e. the angle made by the peel force with the substrate surface, from any value above about 10° although peeling tests at 90 and 180° are most common. If the tape is sufficiently thin for its bending resistance to be negligibly small then as well as the debonding or decohesion energy associated with the adhesive in and around the point of separation, the relation between the peeling force and the peeling angle is influenced both by the mechanical properties of the tape and any pre-strain locked into the tape during its application to the substrate. The analytic solution for a tape material which can be idealised as elastic perfectly-plastic is well established. Here, we present a more general form of analysis, applicable in principle to any constitutive relation between tape load and tape extension. Non-linearity between load and extension is of increasing significance as the peel angle is decreased: the model presented is consistent with existing equations describing the failure of a lap joint between non-linear materials. The analysis also allows for energy losses within the adhesive layer which themselves may be influenced by both peel rate and peel angle. We have experimentally examined the application of this new analysis to several specific peeling cases including tapes of cellophane, poly-vinyl chloride and PTFE. © 2005 Elsevier Ltd. All rights reserved.

Discrete dislocation plasticity analysis of size effects in single crystals

The effect of size and slip system configuration on the tensile stress-strain response of micron-sized planar crystals as obtained from discrete dislocation plasticity simulations is presented. The crystals are oriented for either single or symmetric double slip. With the rotation of the tensile axis unconstrained, there is a strong size dependence, with the flow strength increasing with decreasing specimen size. Below a certain specimen size, the flow strength of the crystals is set by the nucleation strength of the initially present Frank-Read sources. The main features of the size dependence are the same for both the single and symmetric double slip configurations.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.