Produzione e funzionamento di un dispositivo spin valve

Il fenomeno della magnetoresistenza gigante (GMR) consiste nella marcata variazione della resistenza elettrica di una struttura in forma di film sottile, composta da un’alternanza di strati metallici ferromagnetici (FM) e non magnetici (NM), per effetto di un campo magnetico esterno. Esso è alla base di un gran numero di sensori e dispositivi magnetoelettronici (come ad esempio magnetiche ad accesso casuale, MRAM, ad alta densità) ed ulteriori innovazioni tecnologiche sono in via di elaborazione. Particolarmente rilevanti sono diventate le Spin Valve, dispositivi composti da due strati FM separati da uno spaziatore NM, metallico. Uno dei due film FM (free layer) è magneticamente più soffice rispetto all’altro (reference layer), la cui magnetizzazione è fissata mediante accoppiamento di scambio all’interfaccia con uno strato antiferromagnetico (AFM) adiacente. Tale accoppiamento causa l’insorgenza di una anisotropia magnetica unidirezionale (anisotropia di scambio) per lo strato FM, che si manifesta in uno shift orizzontale del ciclo di isteresi ad esso associato (effetto di exchange bias), solitamente accompagnato anche da un aumento del campo coercitivo. Questo lavoro di tesi riporta la deposizione e la caratterizzazione magnetica e magnetoresistiva di due valvole spin, una a struttura top (SVT) composta da strati di Si/Cu[5 nm]/Py[5 nm]/Cu[5 nm]/Py[5 nm]/IrMn[10 nm], ed una a struttura bottom (SVB), di composizione Si/Cu[5 nm]/IrMn[10 nm]/Py[5 nm]/Cu[5 nm]/Py[5 nm], allo scopo di verificare il comportamento magnetoresistivo gigante del dispositivo per questa particolare scelta dei materiali. I campioni sono stati depositati mediante DC Magnetron sputtering, e caratterizzati magneticamente mediante magnetometro SQUID; la caratterizzazione resistiva è stata eseguita tramite metodo di van der Pawn. Vengono infine presentati i risultati sperimentali, in cui si osserva una variazione di magnetoresistenza nei campioni nell’ordine del punto percentuale.

Magnetization dynamics in spin valves

Key technology applications like magnetoresistive sensors or the Magnetic Random Access Memory (MRAM) require reproducible magnetic switching mechanisms. i.e. predefined remanent states. At the same time advanced magnetic recording schemes push the magnetic switching time into the gyromagnetic regime. According to the Landau-Lifschitz-Gilbert formalism, relevant questions herein are associated with magnetic excitations (eigenmodes) and damping processes in confined magnetic thin film structures.rnObjects of study in this thesis are antiparallel pinned synthetic spin valves as they are extensively used as read heads in today’s magnetic storage devices. In such devices a ferromagnetic layer of high coercivity is stabilized via an exchange bias field by an antiferromagnet. A second hard magnetic layer, separated by a non-magnetic spacer of defined thickness, aligns antiparallel to the first. The orientation of the magnetization vector in the third ferromagnetic NiFe layer of low coercivity - the freelayer - is then sensed by the Giant MagnetoResistance (GMR) effect. This thesis reports results of element specific Time Resolved Photo-Emission Electron Microscopy (TR-PEEM) to image the magnetization dynamics of the free layer alone via X-ray Circular Dichroism (XMCD) at the Ni-L3 X-ray absorption edge.rnThe ferromagnetic systems, i.e. micron-sized spin valve stacks of typically deltaR/R = 15% and Permalloy single layers, were deposited onto the pulse leading centre stripe of coplanar wave guides, built in thin film wafer technology. The ferromagnetic platelets have been applied with varying geometry (rectangles, ellipses and squares), lateral dimension (in the range of several micrometers) and orientation to the magnetic field pulse to study the magnetization behaviour in dependence of these magnitudes. The observation of magnetic switching processes in the gigahertz range became only possible due to the joined effort of producing ultra-short X-ray pulses at the synchrotron source BESSY II (operated in the so-called low-alpha mode) and optimizing the wave guide design of the samples for high frequency electromagnetic excitation (FWHM typically several 100 ps). Space and time resolution of the experiment could be reduced to d = 100 nm and deltat = 15 ps, respectively.rnIn conclusion, it could be shown that the magnetization dynamics of the free layer of a synthetic GMR spin valve stack deviates significantly from a simple phase coherent rotation. In fact, the dynamic response of the free layer is a superposition of an averaged critically damped precessional motion and localized higher order spin wave modes. In a square platelet a standing spin wave with a period of 600 ps (1.7 GHz) was observed. At a first glance, the damping coefficient was found to be independent of the shape of the spin-valve element, thus favouring the model of homogeneous rotation and damping. Only by building the difference in the magnetic rotation between the central region and the outer rim of the platelet, the spin wave becomes visible. As they provide an additional efficient channel for energy dissipation, spin waves contribute to a higher effective damping coefficient (alpha = 0.01). Damping and magnetic switching behaviour in spin valves thus depend on the geometry of the element. Micromagnetic simulations reproduce the observed higher-order spin wave mode.rnBesides the short-run behaviour of the magnetization of spin valves Permalloy single layers with thicknesses ranging from 3 to 40 nm have been studied. The phase velocity of a spin wave in a 3 nm thick ellipse could be determined to 8.100 m/s. In a rectangular structure exhibiting a Landau-Lifschitz like domain pattern, the speed of the field pulse induced displacement of a 90°-Néel wall has been determined to 15.000 m/s.rn

Charge and spin transport in memristive La0.7Sr0.3Mno3/SrTiO3/Co devices

Il lavoro svolto si concentra sul trasporto di carica e spin in dispositivi trilayer La0.7Sr0.3MnO3/SrTiO3/Co multifunzionali. Questi dispositivi mostrano sia magnetoresistenza che resistive switching, con un'interessante interazione fra i due effetti. Le giunzioni SrTiO3 sono state scelte per questo lavoro sia per via dei precedenti studi su SrTiO3 come barriera in dispositivi spintronici (cioè dispositivi con magnetoresistenza), sia perché sono promettenti come materiale base per costruire memristor (cioè dispositivi con resistive switching). Il lavoro di tesi è stato svolto all'Istituto per lo studio dei materiali nanostrutturati (ISMN-CNR) a Bologna. Nella prima parte di questa tesi illustrerò la fisica dietro al resistive switching e alla magnetoresistenza di dispositivi trilayer, mostrando anche risultati di studi su dispositivi simili a quelli da me studiati. Nella seconda parte mostrerò la complessa fisica degli ossidi utilizzati nei nostri dispositivi e i possibili meccanismi di trasporto attraverso essi. Nell'ultima parte descriverò i risultati ottenuti. I dispositivi La0.7Sr0.3MnO3/SrTiO3/Co sono stati studiati tramite caratterizzazione elettrica, di magnetotrasporto e con spettroscopia di impedenza. Le misure ottenute hanno mostrato una fisica molto ricca dietro al trasporto di spin e carica in questi dispositivi, e la mutua interazione fra fenomeni spintronici e di resistive switching rappresenta una chiave per comprendere la fisica di questi fenomeni. Analisi dati della dipendenza della resistenza della temperature e caratteristiche corrente-tensioni saranno usati per quantificare e descrivere il trasporto in questi dispositivi.

Charge and spin transport in nanoscale junction from first principles

Recently nanoscale junctions consisting of 0-D nanostructures (single molecule) or 1-D nanostructures (semiconducting nanowire) sandwiched between two metal electrodes are successfully fabricated and characterized. What lacks in the recent developments is the understanding of the mechanism behind the observed phenomena at the level of atoms and electrons. For example, the origin of observed switching effect in a semiconducting nanowire due to the influence of an external gate bias is not yet understood at the electronic structure level. On the same context, different experimental groups have reported different signs in tunneling magneto-resistance for the same organic spin valve structure, which has baffled researchers working in this field. In this thesis, we present the answers to some of these subtle questions by investigating the charge and spin transport in different nanoscale junctions. A parameter-free, single particle Green’s function approach in conjunction with a posteriori density functional theory (DFT) involving a hybrid orbital dependent functional is used to calculate the tunneling current in the coherent transport limit. The effect of spin polarization is explicitly incorporated to investigate spin transport in a nanoscale junction. Through the electron transport studies in PbS nanowire junction, a new orbital controlled mechanism behind the switching of the current is proposed. It can explain the switching behavior, not only in PbS nanowire, but in other lead-chalcogenide nanowires as well. Beside this, the electronic structure properties of this nanowire are studied using periodic DFT. The quantum confinement effect was investigated by calculating the bandgap of PbS nanowires with different diameters. Subsequently, we explain an observed semiconducting to metallic phase transition of this nanowire by calculating the bandgap of the nanowire under uniform radial strain. The compressive radial strain on the nanowire was found to be responsible for the metallic to semiconducting phase transition. Apart from studying one dimensional nanostructure, we also present transport properties in zero dimensional single molecular junctions. We proposed a new codoping approach in a single molecular carborane junction, where a cation and an anion are simultaneously doped to find the role of a single atom in the device. The main purpose was to build a molecular junction where a single atom can dictate the flow of electrons in a circuit. Recent observations of both positive and negative sign in tunneling magnetoresistance (TMR) the using same organic spin-valve structure hasmystified researchers. From our spin dependent transport studies in a prototypical organic molecular tunneling device, we found that a 3% change in metal-molecule interfacial distance can alter the sign of TMR. Changing the interfacial distance by 3%, the number of participating eigenstates as well as their orbital characteristic changes for anti-parallel configuration of the magnetization at the two electrodes, leading to the sign reversal of the TMR. Apart from this, the magnetic proximity effect under applied bias is investigated quantitatively, which can be used to understand the observed unexpectedmagnetismin carbon basedmaterials when they are in close proximity with magnetic substrates.

Thermische Stabilität und Modifizierung der magnetischen Austauschanisotropie in Schichtsystemen

In dünnen Schichtsystemen, in denen es Grenzflächen zwischen antiferromagnetischen (AF) und ferromagnetischen (FM) Bereichen gibt, kann eine unidirektionale magnetische Anisotropie beobachtet werden: die Austauschanisotropie, auch "Exchange-Bias Effekt" genannt. Die Austauschanisotropie ist die Folge einer magnetischen Kopplung zwischen AF und FM. Makroskopisch äußert sich diese Anisotropie in einer Verschiebung der Magnetisierungskurve entlang der Magnetfeldachse. Anwendung findet die Austauschanisotropie z. B. in Spin-Valve Sensoren, deren Funktionsprinzip auf dem Riesen-Magnetowiderstand (engl. giant magnetoresistance, GMR) beruht. Die (thermische) Stabilität der Austauschanisotropie ist eine wichtige Voraussetzung für technische Anwendungen. Im Rahmen dieser Arbeit wurde untersucht, durch welche Materialeigenschaften die Austauschanisotropie in Schichtsystemen mit antiferromagnetischem Nickeloxid (NiO) bestimmt wird. Die Schichten wurden durch (reaktive) Kathodenzerstäubung hergestellt. Durch Variation der Depositionsbedingungen wurden Zusammensetzung und Struktur der NiO-Schichten verändert. Die Ergebnisse systematischer Analysen dieser Größen werden aufgeführt. Der Vergleich dieser Materialanalysen mit magnetischen Messungen an NiO/NiFe Schichtsystemen fšuhrt zu dem Ergebnis, dass die chemische Zusammensetzung und die Struktur der NiO-Schichten die thermische Stabilität der Austauschanisotropie entscheidend beeinflussen. Es wird zusätzlich gezeigt, dass die Stabilität der Austauschanisotropie durch einen Temperprozess im Anschluss an die Herstellung der Schichtsysteme entscheidend verbessert werden kann. Thermisch aktivierte, magnetische Relaxationsprozesse können außerdem zur Erhöhung der Austauschanisotropie führen. Des Weiteren werden zwei neuartige Methoden zur Modifizierung der Austauschanisotropie vorgestellt. Dabei wird gezeigt, dass durch die Bestrahlung der Schichtsysteme mit Helium-Ionen die magnetischen Eigenschaften der Schichtsysteme gezielt verändert und optimiert werden können. Der Einfluss der Ionenbestrahlung auf die Austauschanisotropie in NiO/NiFe Schichtsystemen und auf den Magnetowiderstand in FeMn basierten Spin-Valves steht dabei im Vordergrund der experimentellen Untersuchungen. Eine weitere Möglichkeit zur Modifizierung der Austauschanisotropie ist die Bestrahlung der Schichtsysteme mit kurzen Laserpulsen. Durch einen thermomagnetischen Prozess kann die Austauschanisotropie lokal verändert werden. Experimentelle Ergebnisse von diesem hier erstmals verwendeten Verfahren werden vorgestellt und interpretiert. Mit den beiden genannten Methoden ist es möglich, die Eigenschaften der Austauschanisotropie in Schichtsystemen nachträglich gezielt zu modifizieren.

Electron transport in molecular systems

The remarkable advances in nanoscience and nanotechnology over the last two decades allow one to manipulate individuals atoms, molecules and nanostructures, make it possible to build devices with only a few nanometers, and enhance the nano-bio fusion in tackling biological and medical problems. It complies with the ever-increasing need for device miniaturization, from magnetic storage devices, electronic building blocks for computers, to chemical and biological sensors. Despite the continuing efforts based on conventional methods, they are likely to reach the fundamental limit of miniaturization in the next decade, when feature lengths shrink below 100 nm. On the one hand, quantum mechanical efforts of the underlying material structure dominate device characteristics. On the other hand, one faces the technical difficulty in fabricating uniform devices. This has posed a great challenge for both the scientific and the technical communities. The proposal of using a single or a few organic molecules in electronic devices has not only opened an alternative way of miniaturization in electronics, but also brought up brand-new concepts and physical working mechanisms in electronic devices. This thesis work stands as one of the efforts in understanding and building of electronic functional units at the molecular and atomic levels. We have explored the possibility of having molecules working in a wide spectrum of electronic devices, ranging from molecular wires, spin valves/switches, diodes, transistors, and sensors. More specifically, we have observed significant magnetoresistive effect in a spin-valve structure where the non-magnetic spacer sandwiched between two magnetic conducting materials is replaced by a self-assembled monolayer of organic molecules or a single molecule (like a carbon fullerene). The diode behavior in donor(D)-bridge(B)-acceptor(A) type of single molecules is then discussed and a unimolecular transistor is designed. Lastly, we have proposed and primarily tested the idea of using functionalized electrodes for rapid nanopore DNA sequencing. In these studies, the fundamental roles of molecules and molecule-electrode interfaces on quantum electron transport have been investigated based on first-principles calculations of the electronic structure. Both the intrinsic properties of molecules themselves and the detailed interfacial features are found to play critical roles in electron transport at the molecular scale. The flexibility and tailorability of the properties of molecules have opened great opportunity in a purpose-driven design of electronic devices from the bottom up. The results that we gained from this work have helped in understanding the underlying physics, developing the fundamental mechanism and providing guidance for future experimental efforts.

Enhanced Exchange And Reduced Magnetization of Gd in an Fe/Gd/Fe Trilayer

The exchange interaction of Gd adjacent to Fe has been characterized by transport measurements on a double spin valve with a Fe/Gd/Fe trilayer as the middle layer. Our measurements show that the ferromagnetism of the Gd is enhanced by the presence of the Fe, and it remains ferromagnetic over its Curie temperature up to a thickness no smaller than 1 nm adjacent to the Fe. This thickness is more than double what has been reported before. Additionally, the saturation magnetization of the thin Gd layer sandwiched in Fe was found to be half of its bulk value. This reduced magnetization does not seem to be related to the proximity of Fe but rather to the incomplete saturation of Gd even for very high fields

Magnetization reversal signatures in the magnetoresistance of magnetic multilayers

The simultaneous determination of magnetoresistance and vectorial-resolved magnetization hysteresis curves in a spin valve structure reveals distinct magnetoresistive features for different magnetic field orientations, which are directly related to the magnetization reversal processes. Measurements performed in the whole angular range demonstrate that the magnetoresistive response originates from the intrinsic anisotropic angular dependence of the magnetization orientation between the two ferromagnetic layers. This also provides direct proof that the spin-dependent scattering in the bulk of the magnetic layers is at the origin of the magnetoresistive signal.

Emergence of half-metallicity in suspended NiO chains: Ab initio electronic structure and quantum transport calculations

Contrary to the antiferromagnetic and insulating character of bulk NiO, one-dimensional chains of this material can become half metallic due to the lower coordination of their atoms. Here we present ab initio electronic structure and quantum transport calculations of ideal infinitely long NiO chains and of more realistic short ones suspended between Ni electrodes. While infinite chains are insulating, short suspended chains are half-metallic minority-spin conductors that displays very large magnetoresistance and a spin-valve behavior controlled by a single atom.

Produção e estudo de multicamadas magnéticas em substrato flexível

Magnetic multilayers are the support for the production of spintronic devices, representing great possibilities for miniaturized electronics industry. having the control to produce devices as well as their physical properties from simple multilayer films to highly complex at the atomic scale is a fundamental need for progress in this area, in recent years has highlighted the production of organic and flexible spintronic devices. Because of this trend, the objective of this work was to produce magnetic multilayers deposited on flexible substrate using magnetron sputtering dc technique. Three sets of samples were prepared. The first set composed of the trilayer type CoFe=Cu(t)=CoFe with different thickness of the metallic spacer. The second set consists of two multilayer subgroups, CoFe=Cu in the presence of IrMn layer as a buffer and the next multilayer as cap layer. The third set consisting of non-magnetostrictive multilayer permalloy (Py=Ta and Py=Ag) on flexible substrate and glass. The magnetic properties, were investigated by magnetometry measurements, ferromagnetic resonance and magnetoimpedance (MI), measurements were carried out at room temperature with the magnetic field always applied on the sample plane. For structural analysis, the diffraction X-ray was used. The results of the trilayer showed a high uniaxial anisotropy field for the sample with a spacer of 4.2 nm. For the multilayer in the presence of IrMn layer as the buffer, the study of static and dynamic magnetic properties showed isotropic behavior. For the multilayer in the presence of IrMn layer as a cap, the results of static magnetic properties of the magnetic behavior exhibited a spin valve structure type. However there was a disagreement with results of ferromagnetic resonance measurements, which was justified by the contribution of the unstable and stable grain to the rotatable anisotropy and Exchange bias in ferromagneticantiferromagnetic interface. The third serie of samples showed similar results behavior for the MI Ag multilayers spacer in both substrates. There are also significant MI changes with the Ta spacer, possible associated with the compressive stress on the flexible substrate sample.

Extreme Harmonic Generation In Electrically Driven Spin Resonance.

We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.

Measurement Of Longitudinal Spin Asymmetries For Weak Boson Production In Polarized Proton-proton Collisions At Rhic.

We report measurements of single- and double-spin asymmetries for W^{±} and Z/γ^{*} boson production in longitudinally polarized p+p collisions at sqrt[s]=510  GeV by the STAR experiment at RHIC. The asymmetries for W^{±} were measured as a function of the decay lepton pseudorapidity, which provides a theoretically clean probe of the proton's polarized quark distributions at the scale of the W mass. The results are compared to theoretical predictions, constrained by polarized deep inelastic scattering measurements, and show a preference for a sizable, positive up antiquark polarization in the range 0.05

Site Specific Spin Dynamics In Bafe2as2: Tuning The Ground State By Orbital Differentiation.

The role of orbital differentiation on the emergence of superconductivity in the Fe-based superconductors remains an open question to the scientific community. In this investigation, we employ a suitable microscopic spin probe technique, namely Electron Spin Resonance (ESR), to investigate this issue on selected chemically substituted BaFe2As2 single crystals. As the spin-density wave (SDW) phase is suppressed, we observe a clear increase of the Fe 3d bands anisotropy along with their localization at the FeAs plane. Such an increase of the planar orbital content is interestingly independent of the chemical substitution responsible for suppressing the SDW phase. As a consequence, the magnetic fluctuations in combination with this particular symmetry of the Fe 3d bands are propitious ingredients for the emergence of superconductivity in this class of materials.

Implantation Of Transcatheter Aortic Valve Prosthesis Through The Ascending Aorta Concomitant With Coronary Artery Bypass Grafting Without Cardiopulmonary Bypass.

Introdution: The transcatheter aortic valve implantation in the treatment of high-risk symptomatic aortic stenosis has increased the number of implants every year. The learning curve for transcatheter aortic valve implantation has improved since the last 12 years, allowing access alternatives. The aim of this study is to approach the implantation of transcatheter aortic valve through transaortic via associated with off-pump cardiopulmonary bypass surgery in a 67-year-old man, with chronic obstructive pulmonary disease, arterial hypertension and kidney transplant. Off-pump coronary artery bypass surgery was performed and the valve in the aortic position was released successfully. There were no complications in the intraoperative and postoperative period. Gradient reduction, effective orifice increasing of the prosthesis and absence of valvular regurgitation after implantation were observed by transesophageal echocardiography. Procedural success demonstrates that implantation of transcatheter aortic valve through the ascending aorta associated with coronary artery bypass surgery without CPB is a new option for these patients.

Efficacy And Safety Of Intravitreal Bevacizumab In Eyes With Neovascular Glaucoma Undergoing Ahmed Glaucoma Valve Implantation: 2-year Follow-up.

To evaluate the efficacy and safety of intravitreal bevacizumab (IVB) in eyes with neovascular glaucoma (NVG) undergoing Ahmed glaucoma valve (AGV) implantation. This was a multicentre, prospective, randomized clinical trial that enrolled 40 patients with uncontrolled neovascular glaucoma that had undergone panretinal photocoagulation and required glaucoma drainage device implantation. Patients were randomized to receive IVB (1.25 mg) or not during Ahmed valve implant surgery. Injections were administered intra-operatively, and 4 and 8 weeks after surgery. After a mean follow-up of 2.25 ± 0.67 years (range 1.5-3 years), both groups showed a significant decrease in IOP (p < 0.05). There was no difference in IOP between groups except at the 18-month interval, when IOP in IVB group was significantly lower (14.57 ± 1.72 mmHg vs. 18.37 ± 1.06 mmHg - p = 0.0002). There was no difference in survival success rates between groups. At 24 months, there was a trend to patients treated with IVB using less antiglaucoma medications than the control group (p = 0.0648). Complete regression of rubeosis iridis was significantly more frequent in the IVB group (80%) than in the control group (25%) (p = 0.0015). Intravitreal bevacizumab may lead to regression of new vessels both in the iris and in the anterior chamber angle in patients with neovascular glaucoma undergoing Ahmed glaucoma valve implantation. There is a trend to slightly lower IOPs and number of medications with IVB use during AGV implantation for neovascular glaucoma.