Optical near-field simulation of Sb thin film thermal lens and its application in optical recording

Using the finite-difference-time-domain method, the near-field optical distribution and properties of Sb thin film thermal lens are calculated and simulated. The results show as follows. Within the near-field distance to the output plane of thermal lens, the spot size is approximately 100 nm, and its intensity is greatly enhanced, which is higher than that of incident light. The spot shape gradually changes from ellipse to round at the distance of more than 12 nm to the output plane. The above-simulated results are further demonstrated by the static optical recording experiment. (C) 2005 American Institute of Physics.

Rigorous transmittance analysis of a sub-wavelength Sb thin film lens

We quantitatively analysed the factors contributing to the optical transmission enhancement of a sub-wavelength Sb thin film lens, using the finite-difference time-domain (FDTD) method. The results show that the transmission enhancement of the dielectric with a Gaussian distributed refractive index loaded in a sub-wavelength circular hole is not only due to the high refractive index dielectric, but also due to the specific distributions of refractive index. It is the first study about the effects of the refractive index distribution on the transmission of a sub-wavelength aperture. This kind of lens has practical applications in the very small aperture lasers and for near-field optical storage and lithography.

Time response of optical switching properties of Sb thin films under focused laser pulses

The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method

The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical conductivity of the SnO2 thin film, resulting in a nanostructured material. The nanostructured Sb-doped SnO2 thin films present high electrical conductivity, even in the presence of high porosity, supporting the hypothesis that nanostructured material must possess strong electrical conductivity. This work involves important aspects that can be applied to the development of high performance transparent conducting thin film. (C) 2003 Elsevier B.V. All rights reserved.

Role of silver doping in oxygen incorporation of oxide thin film

A distinctive characteristic of silver in oxygen incorporation of oxide thin films during pulsed laser ablation has been discovered. Optical emission spectroscopy studies of laser-induced plume of Ag-target indicates the presence of AgO species whose concentration increases with an increase in oxygen partial pressure. The formation of AgO in laser-plume has been found to be very useful for the realization of high temperature superconducting YBa2Cu3O7-delta (YBCO) and giant magnetoresistive La0.7MnO3-delta (LMO) thin films with dramatically superior quality if the target materials contained a small amount of silver. The improvement in the quality of these films is brought about by the supply of atomic oxygen to oxide lattices during their formation. This becomes possible due to the fact that Ag, after it is ablated with other constituent materials in the target, gets moderately oxidized in an oxygen atmosphere and the oxidized species dissociate back into Ag and nascent O at the substrate surface. The nascent oxygen is very highly reactive and is easily assimilated into the lattice of these compounds. (C) 1997 Elsevier Science S.A.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Structural and dielectric behavior of pulsed laser ablated Sr(0.6)Ca(0.4)TiO(3) thin film and asymmetric multilayer of SrTiO(3) and CaTiO(3)

Homogeneous thin films of Sr(0.6)Ca(0.4)TiO(3) (SCT40) and asymmetric multilayer of SrTiO(3) (STO) and CaTiO(3) (CTO) were fabricated on Pt/Ti/SiO(2)/Si substrates by using pulsed laser deposition technique. The electrical behavior of films was observed within a temperature range of 153 K-373 K. A feeble dielectric peak of SCT40 thin film at 273 K is justified as paraelectric to antiferroelectric phase transition. Moreover, the Curie-Weiss temperature, determined from the epsilon'(T) data above the transition temperature is found to be negative. Using Landau theory, the negative Curie-Weiss temperature is interpreted in terms of an antiferroelectric transition. The asymmetric multilayer exhibits a broad dielectric peak at 273 K. and is attributed to interdiffusion at several interfaces of multilayer. The average dielectric constants for homogeneous Sr(0.6)Ca(0.4)TiO(3) films (similar to 650) and asymmetric multilayered films (similar to 350) at room temperature are recognized as a consequence of grain size effect. Small frequency dispersion in the real part of the dielectric constants and relatively low dielectric losses for both cases ensure high quality of the films applicable for next generation integrated devices. (C) 2011 Elsevier B.V. All rights reserved.

Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

ZnO/Si heterojunctions were fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without buffer layers. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent current-voltage measurements and RT capacitance-voltage (C-V) analysis. The charge carrier concentration and the barrier height (BH) were calculated, to be 5.6x10(19) cm(-3) and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated using the thermionic emission (TE) model, were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10(-7)A/cm(2) K-2 than the theoretical value (32 A/cm(2) K-2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of sigma(2)=0.035 V. By implementing the GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm(2) K-2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. (C) 2012 Elsevier B.V. All rights reserved.

Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics

CuIn1-xAlxSe2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (Delta(SO)) and crystal field (Delta(CF)) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1-xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A. M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 x 10(-3) A in the dark at 1 V to 3 x 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity R-lambda similar to 920 A W-1, sensitivity S similar to 9.0, specific detectivity D* similar to 3 x 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

Novel thin-film composite membranes with improved water flux from sulfonated cardo poly(arylene ether sulfone) bearing pendant amino groups

A new class of polymeric amine, namely, sulfonated cardo poly(arylene ether sulfone) (SPES-NH2) was synthesized and used for the preparation of thin-film composite membrane. The TFC membranes were prepared on a polysulfone supporting film through interfacial polymerization with trimesoyl chloride (TMC) solutions and amine solutions containing SPES-NH2 and m-phenylenediamine (MPDA). The resultant membranes were characterized with water permeation performance, chemical structure, hydrophilicity of active layer and membrane morphology including top surface and cross-section.

Polyamide thin film composite membranes prepared from isomeric biphenyl tetraacyl chloride and m-phenylenediamine

Three novel of isomeric tetra-functional biphenyl acid chloride: 3,3',5,5'-biphenyl tetraacyl chloride (mm-BTEC), 2,2',4,4'-biphenyl tetraacyl chloride (om-BTEC), and 2,2',5,5'-biphenyl tetraacyl chloride (op-BTEC) were synthesized, and used as new monomers for the preparation of the thin film composite (TFC) reverse osmosis (RO) membranes through interfacial polymerization with m-phenylenediamine (MPDA). The results of membrane performance test showed that membranes prepared from om-BTEC and op-BTEC had higher flux at the expanse of rejection compared with membranes prepared from mm-BTEC.

Solvent-induced Morphology of the Binary Mixture of Diblock Copolymer in Thin Film: The Block Length and Composition Dependence of Morphology

A series of binary SB blend samples with various overall volume fraction of PS (Phi(PS)) and different discrete distribution of the block length (denoted as d(PS) or d(PB)) were prepared by mixing various asymmetric poly(styrene)-block-poly(butadiene) (SB) block copolymers with a symmetric SB block copolymer. The influences of the external solvent field, composition, and the block length distribution on the morphologies of the blends in the thin films were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The experimental results revealed that after solvent annealing, the interface of the blend thin films depended mainly on the cooperative effects of the annealing solvent and the inherently interfacial curvature of the blends. Upon exposure to the saturated vapor of cyclohexane, which has preferential affinity for the PB block, a "threshold" of Phi(PS) (approximate 0.635-0.707) was found. Below such threshold, the influence of the annealing solvent played an important role on the interfacial curvature of the blend thin film.

Polyamide thin film composite membranes prepared from 3,4',5-biphenyl triacyl chloride, 3,3',5,5'-biphenyl tetraacyl chloride and m-phenylenediamine

Two novel of tri- and tetra-functional biphenyl acid chloride: 3,4',5-biphenyl triacyl chloride (BTRC) and 3,3',5,5'-biphenyl tetraacyl chloride (BTEC), were synthesized, and used as new monomers for the preparations of the thin film composite (TFC) reverse osmosis (RO) membranes. The TFC RO membranes were prepared on a polysulfone supporting film through interfacial polymerization with the two new monomers and m-phenylenediamine (MPD). The membranes were characterized for the permeation properties, chemical composition, d-space between polymer chains, hydrophilicity, membrane morphology including top surface and cross-section. Permeation experiment was employed to evaluate the membranes performance including salt rejection and water flux. The surface structure and chemical composition of membranes were analyzed by attenuated total reflectance infrared (ATR-IR) and X-ray photoelectronic spectroscopy (XPS). The results revealed that the active layer of membranes was composed of highly cross-linked aromatic polyamide with the functional acylamide (-CONH-) bonds. The TFC membranes prepared from biphenyl acid chloride exhibit higher salt rejection compared with that prepared from trimesoyl chloride (TMC) at the expanse of some flux.

Preparation and characterization of a layered transparent luminescent thin film of silica-CTAB-Tb(acac)(3) composite with mesostructure

A layered luminescent mesostructured thin film of silica-CTAB-Tb(acac)(3) composite has been synthesized by a dip-coating process through an in situ sol-gel method. The terbium (Tb3+) ion and beta-diketone organic ligand acetylacetone (acac) were introduced into the precursor solution, respectively. The as-synthesized composite film was transparent, colorless and possessed a layered structure. After the composite film was dried at 50 degreesC for a few minutes Tb(acac)(3) complex was synthesized in the mesostructured thin film, which can be indicated by the luminescence of the composite film under the UV lamp. The properties of the samples were characterized by XRD, absorption, Fourier transform infrared spectroscopy, and luminescent spectra.