Arte reversa: aplicando a engenharia reversa na arte

This study aimed to examine the reverse engineering and respond to a concern about the possible application of this concept in art, breaking down barriers and breaking paradigms. Using 3D scanning, the art of computer aided design and manufacturing – CAD/CAM, machining by computer numerical control - CNC, engineering, and applying this methodology in the arts especially in sculpture, it is possible to dematerialize a artwork, virtualizes it in 3D programs, make speeches, and process a new work, a new art elsewhere. By the example of surgeries at a distance, the artist, or technical author could produce their works, and materialize them anywhere. In other words, do the reverse gear. It discusses the relationship between art and technology, the role of the author, the viewer, which can interfere with the interactivity that case by stating that art, exists only in the look and feel of the viewer.

Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200 degrees C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. (c) 2006 American Institute of Physics.

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Interoperabilität von Software Art. 6 der Comperterprogramm-Richtlinie aus heutiger Sicht

This article reviews Article 6 of the Software Directive and discusses the need for a revision. Beyond clarification of the scope of the very limited provision on reverse engineering, it seems that the introduction of the clause into copyright was unfortunate. The indirect protection of ideas by prohibiting reverse engineering is foreign to the copyright concept. Permitting reverse engineering altogether would promote research and development and further other goals like ICT security. Innovation would not be retarded, which is the reason why US trade secret law permits reverse engineering based also on economic arguments. The notions of compatibility Article 6 tries to address are better dealt with by Competition Law, which was demonstrated by the Microsoft Decision of the European Court in 2007.

The Triumph of Fame (reverse)

Giovanni di ser Giovanni Guidi; D: 3 ft. 1/2 in. (painted surface); tempera, silver, and gold on wood

Francesco d'Este (born about 1430, died after 1475), reverse, Este family coat of arms and crest

Rogier van der Weyden; 11 47/64 in.x 7 63/64 in. (painted surface); oil on wood

Kemper Museum of Contemporary Art & Design, Kansas City Art Institute, Kansas City, Missouri, 1991-1994

[Early Conceptual Sketches], untitled. Ink sketches on reverse of "La Valencia Hotel" memo pad paper, 3 1/2 x 6 1/2 inches [from photographic copy by Lance Burgharrdt]

The scope to improve the efficiency of solar-powered reverse osmosis

The aim of this paper is to identify and evaluate potential areas of technical improvement to solar-powered desalination systems that use reverse osmosis (RO). We compare ideal with real specific energy consumption (SEC) to pinpoint the causes of inefficiency. The ideal SEC is compared among different configurations including a batch system driven by a piston, and continuous systems with single or multiple stages with or without energy recovery in each case. For example, to desalinate 1 m3 of freshwater from normal seawater (osmotic pressure 27 bar) will require at least 0.94 kWh of solar energy; thus in a sunny coastal location, up to 1850 m3 of water per year per m2 (m3/m2) of land covered by solar collectors could theoretically be desalinated. For brackish water (osmotic pressure 3 bar), 11570 m3/m2 of fresh water could theoretically be obtained under the same conditions. These ideal values are compared with practically achieved values reported in the literature. The practical energy consumption is found to be typically 40-200 times higher depending on feed water composition, system configuration and energy recovery. For state-of-the-art systems, energy losses at the various steps in the conversion process are quantified and presented with the help of Sankey diagrams. Improvements that could reduce the losses are discussed. Consequently, recommendations for areas of R&D are highlighted with particular reference to emerging technologies. It is concluded that there is considerable scope to improve the efficiency of solar-powered RO system.

Autoethnography : critical appreciation of an emerging art

In this article, the author discusses how she applied autoethnography in a study of the design of hypermedia educational resources and shows how she addressed problematic issues related to autoethnographic legitimacy and representation. The study covered a 6-year period during which the practitioner’s perspective on the internal and external factors influencing the creation of three hypermedia CD-ROMs contributed to an emerging theory of design. The author highlights the interrelationship between perception and reality as vital to qualitative approaches and encourages researchers to investigate their reality more fully by practicing the art of autoethnography.