Weak ferromagnetism in poly(3-methylthiophene)(PMTh)

Ferromagnetic behaviour at 300 K has been observed from SQUID experiments in ClO4- doped PMTh, the samples were prepared electrochemically at 25 degreesC in acetonitrile with 0.1M LiClO4 and then partially reduced. Atomic absorption analysis discards magnetic particles contamination. Hysteresis curves were observed for pressed pellets in ail range of temperatures (300K-2K). The remanence at 300 K and pressed at 250 bar was around 8.06x10(-4) emu/g with coercitivity of 130 Oe. The influence of water content in the solvent during the sample synthesis and the pressure is shown. We discuss a model that explains our data in terms of the anisotropic superexchange Dziatoshinski-Moriya interaction giving rise to weak ferromagnetism.

Room temperature ferromagnetic behavior in pressed pellets of doped poly (3-methylthiophene)

Room temperature ferromagnetic behavior has been observed in pressed pellets of doped poly(3-methylthiophene). In this work we show that thermoremance data taken in two different ways favours the interpretation of data in terms of the Dzialoshinski-Moriya anisotropic superexchange interaction of the polarons via dopant anions giving rise to weak ferromagnetism.

Huge values of room-temperature dielectric constants in pellets of poly(3-methylthiophene)

Room temperature data of impedance and phase angle in pellets of electrochemically synthesized ClO4- doped poly(3-methylthiophene) (P3MT) were analyzed assuming the sample being represented by a parallel resistor-capacitor (RC) circuit or by a series RC circuit. The last assumption proved to be the correct one, and to confirm it we use the sample as the RC component of a resistor-capacitor-inductor series resonator. We discuss the possibility of this RC series behavior to be due to a charge-density wave characteristic also evidenced from the huge values of the low-frequency dielectric constant of the system.

GIGAHERTZ CONDUCTIVITY OF PRESSED PELLETS OF CLO4--DOPED POLY(3-METHYLTHIOPHENE) OBTAINED FROM ELECTRON-SPIN-RESONANCE MEASUREMENTS

Gigahertz conductivity of pressed pellets of ClO4--doped poly( 3-methylthiophene) can be readily obtained from the asymmetry ratio (A / B) of the electron spin resonance line using Dyson's theory. The measurements were performed in three different frequencies, 1.3, 9.4, and 35 GHz. The temperature dependence of the gigahertz conductivity is sensitive to the heating rate, probably due to the ordering of the randomly assembled anions. (C) 1994 Academic Press, Inc.

Field-dependent conductivity at low electric fields in pressed pellets of doped poly (3-methylthiophene): evidence of charge-density wave depinning

Field-dependent conductivity at low electric fields was observed from low to room temperature in pressed pellets of doped poly(3-methylthiophene). The room temperature data showed good agreement with Bardeen's theory of charge-density wave depinning and the values of the parameters obtained are consistent with a strong electron-phonon interaction as expected for quasi-one dimensional systems. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Two-phase separation observed in thermally treated pellets of ClO4- doped poly(3-methylthiophene) from electron spin resonance measurements

A pressed pellet of CIO (-)(4) poly (3-methylthiophene) (P3MT) was heated for two hours at 85 degrees C and suddenly dropped in liquid nitrogen. A change was observed around 220 K in the Electron Spin Resonance (ESR) spectra when the sample was slowly cooled from room temperature. ESR line asymmetry parameter (A/B) showed two spatially separated phases. One was identified as a small metallic-like phase. The other phase, the larger one, makes a transition to a semiconducting Charge-Density Wave (CDW) state.

Crystallization observed from the spin behavior in poly(3-methylthiophene)

Electron Spin Resonance (ESR) data in pressed pellets of doped poly(3-methylthiophene) (P3MT) show a single ESR line that changes into a broad and a narrow superimposed lines below 225K. D.C. susceptibility measurements using a SQUID susceptometer didn't reveal any special feature at this temperature. Assuming crystallization of the polymer, we attribute the broad line to the crystalline fraction of the polymer and the narrow line to the amorphous one.

THERMAL-HISTORY-DEPENDENT TRANSITION IN PRESSED PELLETS OF CLO4(-)-DOPED POLY(3-METHYLTHIOPHENE)

Electron-spin-resonance and dc conductivity data show a thermal-history-dependent transition at 240 K in pressed pellets of ClO4--doped poly(3-methylthiophene) (P3MT). We discuss the possibility of this transition to be a Peierls transition from a room-temperature-metallic to a charge-density-wave state driven by anions ordering at this temperature. Below 100 K, dc conductivity shows a change from linear to exponential decay. Nonlinear conductivity has also been observed in this system for very low electric fields.

Metal-insulator transitions in pressed pellets of BF4 - doped poly(3-methylthiophene)

From Electron Spin Resonance (ESR) data in pressed pellets of BF4 - doped Poly(3-methylthiophene) (P3MT) we obtained simultaneously the paramagnetic susceptibility and. the microwave conductivity. We observed a transition from a high-temperature insulator state to a room-temperature metallic state. Around 240K. evidence of a Peierls transition is observed, but if the sample is slowly cooled, this transition is partially suppressed. DC conductivity data taken with the sample quenched to 79 K show a non-linear I-V response for very small electric fields, suggesting depinning of Charge-Density Wave (CDW). The data for heating and cooling the system above room temperature, indicate the formation of bipolarons.

Magnetic behavior of poly(3-methylthiophene): Metamagnetism and room-temperature weak ferromagnetism

A weak ferromagnetic phase is shown in pressed pellets of partially doped poly(3-methylthiophene) (P3MT) in the whole range from 1.8 to 300 K in magnetic measurements. Thermoremanence data have been used to estimate the suppression of this phase to be around 815 K. We also show that instead of the classical antiferromagnetism for the first-order interaction that gives weak ferromagnetism as a second-order effect, metamagnetic behavior is observed. X-band electron spin resonance (ESR) measurements and magnetization measurements allowed us to estimate that 8.1% of the total number of spins contributes to the weak ferromagnetism at room temperature. The doping level obtained from the ESR data is in good agreement with that estimated from electron dispersive spectroscopy measurements.

Non ohmic gigahertz conductivity in pressed pellets of ClO4 doped poly(3-methylthiophene)

ESR measurements In pressed pellets of doped Poly(3-Methylthiophene)(P3MT) were performed at 10 K and 50 K after cooling the system slowly from room temperature to 110 K, quenching to 77 K and then to 10 K. ESR line asymmetry (A/B) as a function of microwave power was observed and 9.4 GHz conductivity was obtained from Dyson's theory. The data is discussed in terms of Charge-Density Wave (CDW) depinning. At 50 K the threshold electric field is estimated to be less than 1 V/cm. At 10 K a subtle pinning of the CDW was observed around 15 mW.

Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene)

A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

Investigation of electron acceptor states in poly(3-methylthiophene)

Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.

Charge transport in poly(3-methylthiophene) schottky barrier diodes

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.