Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Infrared emissions, visible up-conversion, thermoluminescence and defect centres in Er(3)Al(5)O(12) phosphor obtained by solution combustion reaction

The Er(3)Al(5)O(12) phosphor powders were prepared using the solution combustion method. Formation and homogeneity of the Er(3)Al(5)O(12) phosphor powders have been verified by X-ray diffraction and energy-dispersive X-ray analysis respectively. The frequency up-conversion from Er(3)Al(5)O(12) phosphor powder corresponding to the (2)H(9/2) -> (4)I(15/2), (2)H(11/2) -> (4)I(15/2), (4)S(3/2) -> (4)I(15/2), (4)F(9/2) -> (4)I(15/2) and the infrared emission (IR) due to the (4)I(13/2) -> (4)I(15/2) transitions lying at similar to 410, similar to 524, similar to 556, 645-680 nm and at similar to 1.53 mu m respectively upon excitation with a Ti-Sapphire pulsed/CW laser have been reported. The mechanism responsible for the frequency up-conversion and IR emission is discussed in detail. Defect centres induced by radiation were studied using the techniques of thermoluminescence and electron spin resonance. A single glow peak at 430A degrees C is observed and the thermoluminescence results show the presence of a defect center which decays at high temperature. Electron spin resonance studies indicate a center characterized by a g-factor equal to 2.0056 and it is observed that this center is not related to the thermoluminescence peak. A negligibly small concentration of cation and anion vacancies appears to be present in the phosphor in accordance with the earlier theoretical predictions.

Effects of melting temperature on the broadband infrared luminescence of bi-doped and Bi/Dy co-doped chalcohalide glasses

Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.

Broadband near-infrared emission in Er3+-Tm3+ codoped chalcohalide glasses

The near-IR emission spectra of Er3+-Tm3+ codoped 70GeS(2)-20In(2)S(3)-10CsI chalcohalide glasses were studied with an 808 nm laser as an excitation source. A broad emission extending from 1.35 to 1.7 mu m with a FWHM of similar to 160 nm was recorded in a 0.1 mol.% Er2S3, 0.5 mol.% Tm2S3 codoped chalcohalide glass. The fluorescence decay curves of glasses were measured by monitoring the emissions of Tm3+ at 1460 nm and Er3+ at 1540 nm, and the lifetimes were obtained from the first-order exponential fit. The luminescence mechanism and the possible energy-transfer processes are discussed with respect to the energy-level diagram of Er3+ and Tm3+ ions. (C) 2008 Optical Society of America

Near infrared broadband emission of bismuth-doped aluminophosphate glass

Near infrared broadband emission characteristics of bismuth-doped aluminophosphate glass have been investigated. Broad infrared emissions peaking at 1210nm, 1173nm and 1300nm were observed when the glass was pumped by 405nm laser diode (LD), 514nm Ar+ laser and 808nm LD, respectively. The full widths at half maximum (FWHMs) are 235nm, 207nm and 300nm for the emissions at 1210nm, 1173nm and 1300nm, respectively. Based on the energy matching conditions, it is suggested that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broadband infrared luminescent characteristics of the glasses indicate that they are promising for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Effect of Ag nanoparticles on the radiative properties of tellurite glasses doped with Er3+, Yb3+ and Tm3+ ions

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Infrared-to-visible upconversion emissions in Er3+ doped TeO2-based oxyhalide glasses

The fluorescence and up-conversion spectral properties of Er3+-doped TeO2-ZnO and TeO2-ZnO-PbCl2 glasses suitable for developing optical fiber amplifier and laser have been fabricate and characterized. Strong green (around 527-550 nm) and red (around 661 nm) up-conversion emissions under 977 nm laser diode excitation were investigated, corresponding to H-2(11/2), S-4(3/2), --> I-4(15/2) and F-4(9/2) --> I-4(15/2) transitions of Er3+ ions respectively, have been observed and the involved mechanisms have been explained. The dependence of up-converted fluorescence intensity versus laser power confirm that two-photons contribute to up-conversion of the green-red emissions. The novelty of this kind of optical material has been its ability in resisting devitrification, and its promising optical properties strongly encourage for their further development as the rare-earth doped optical fiber amplifiers and upconversion fiber laser systems.

低速~(40)Ar~(17+)离子入射金属Be表面发射的近红外光谱线和X射线谱；Infrared Light and X-ray Emissions of ~(40)Ar~(17+) Impacting on Be Surface ；

用速度不同的(动能EK=272和357keV,速度v=1.14×106和1.72×106m/s)的高电荷态离子40Ar17+分别入射金属Be表面,同时测量这种相互作用过程中产生的近红外光谱线和X射线谱。实验结果表明,在低速范围内(速度小于玻尔速度vBohr=2.19×106m/s),速度较小的40Ar17+离子在到达金属的表面临界距离Rc到进入表面(2—3原子层)的进程中,形成了较多的高激发态Ar原子,其退激辐射较强的光谱线,进而验证了经典过垒模型。

The vinyl bromide optically pumped far infrared laser: New large offset emissions

We present the results of a study on vinyl bromide for the search for new far infrared (FIR) laser lines. As the pump source, we use a CW waveguide CO2 laser with a tunability of 290 MHz around each line in order to pump large offset vibrational transitions. As a consequence, we obtained 28 new FIR laser emissions; 24 of them have wavelengths greater than 500 mum and are, therefore, suitable to be used in high-field EPR spectroscopy, For each of the new lines, we give the wavelength, the offset of the pumping transition with respect to the center Frequency of the CO2 emission, the polarization relative to that of the pumping laser line, the operating pressure, and the relative intensity. We also present a catalog including data of all of the FIR laser lines observed from this molecule up to now.

Design and flight testing of an integrated solar powered UAV and WSN for greenhouse gas monitoring emissions in agricultural farms

There is an increased interest in measuring the amount of greenhouse gases produced by farming practices . This paper describes an integrated solar powered Unmanned Air Vehicles (UAV) and Wireless Sensor Network (WSN) gas sensing system for greenhouse gas emissions in agricultural lands. The system uses a generic gas sensing system for CH4 and CO2 concentrations using metal oxide (MoX) and non-dispersive infrared sensors, and a new solar cell encapsulation method to power the unmanned aerial system (UAS)as well as a data management platform to store, analyze and share the information with operators and external users. The system was successfully field tested at ground and low altitudes, collecting, storing and transmitting data in real time to a central node for analysis and 3D mapping. The system can be used in a wide range of outdoor applications at a relatively low operational cost. In particular, agricultural environments are increasingly subject to emissions mitigation policies. Accurate measurements of CH4 and CO2 with its temporal and spatial variability can provide farm managers key information to plan agricultural practices. A video of the bench and flight test performed can be seen in the following link: https://www.youtube.com/watch?v=Bwas7stYIxQ

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

Ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses

We report ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses. The infrared luminescence almost covers the whole low loss wavelength region (1200-1650 nm) of silica glass fiber when excited by a diode laser at 980 nm. The full width at half maximum (FWHM) of the luminescence is 510 nm. The luminescence peak can be divided into three Gaussian peaks, and the fluorescence lifetime of the three emissions are 297 mu s, 470 mu s and 1725 mu s, respectively. These fluorescence properties indicate that the glasses are promising material for broadband optical amplifiers. (C) 2007 Elsevier Ltd. All rights reserved.