Near-infrared quantum cutting through a three-step energy transfer process in Nd3+-Yb3+ co-doped fluoroindogallate glasses

The Nd3+-Yb3+ couple was investigated in fluoroindogallate glasses using optical spectroscopy to elucidate the energy transfer mechanisms involved in the downconversion (DC) process. Upon excitation of a Nd3+ ion by an ultraviolet photon, DC through a three-step energy transfer process occurs, in which the energy of the ultraviolet photon absorbed by the Nd3+ ion is converted into three infrared photons emitted by Yb3+ ions, i.e. quantum cutting (QC). In addition, with excitation in the visible, our results confirm that the DC process occurs through a one-step energy transfer process, in which the energy of a visible photon absorbed by the Nd3+ ion is converted into only one infrared photon emitted by an Yb3+ ion. Time-resolved measurements enabled the estimation of the efficiencies of the cross-relaxation processes between Nd3+ and Yb3+ ions.

Atomic Charge Transfer-counter Polarization Effects Determine Infrared Ch Intensities Of Hydrocarbons: A Quantum Theory Of Atoms In Molecules Model.

Atomic charge transfer-counter polarization effects determine most of the infrared fundamental CH intensities of simple hydrocarbons, methane, ethylene, ethane, propyne, cyclopropane and allene. The quantum theory of atoms in molecules/charge-charge flux-dipole flux model predicted the values of 30 CH intensities ranging from 0 to 123 km mol(-1) with a root mean square (rms) error of only 4.2 km mol(-1) without including a specific equilibrium atomic charge term. Sums of the contributions from terms involving charge flux and/or dipole flux averaged 20.3 km mol(-1), about ten times larger than the average charge contribution of 2.0 km mol(-1). The only notable exceptions are the CH stretching and bending intensities of acetylene and two of the propyne vibrations for hydrogens bound to sp hybridized carbon atoms. Calculations were carried out at four quantum levels, MP2/6-311++G(3d,3p), MP2/cc-pVTZ, QCISD/6-311++G(3d,3p) and QCISD/cc-pVTZ. The results calculated at the QCISD level are the most accurate among the four with root mean square errors of 4.7 and 5.0 km mol(-1) for the 6-311++G(3d,3p) and cc-pVTZ basis sets. These values are close to the estimated aggregate experimental error of the hydrocarbon intensities, 4.0 km mol(-1). The atomic charge transfer-counter polarization effect is much larger than the charge effect for the results of all four quantum levels. Charge transfer-counter polarization effects are expected to also be important in vibrations of more polar molecules for which equilibrium charge contributions can be large.

Structure and far-infrared edge modes of quantum antidots at zero magnetic field

We have investigated edge modes of different multipolarity sustained by quantum antidots at zero magnetic field. The ground state of the antidot is described within a local-density-functional formalism. Two sum rules, which are exact within this formalism, have been derived and used to evaluate the energy of edge collective modes as a function of the surface density and the size of the antidot.

Structure and far-infrared edge modes of quantum antidots at zero magnetic field

We have investigated edge modes of different multipolarity sustained by quantum antidots at zero magnetic field. The ground state of the antidot is described within a local-density-functional formalism. Two sum rules, which are exact within this formalism, have been derived and used to evaluate the energy of edge collective modes as a function of the surface density and the size of the antidot.

All-optical switching device for infrared based on PbTe quantum dots

Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region. (C) 2007 Elsevier Ltd. All rights reserved.

Optimizing infrared to near infrared upconversion quantum yield of β-NaYF4:Er3+ in fluoropolymer matrix for photovoltaic devices

The present study reports for the first time the optimization of the infrared (1523 nm) to near-infrared (980 nm) upconversion quantum yield (UC-QY) of hexagonal trivalent erbium doped sodium yttrium fluoride (β-NaYF4:Er3+) in a perfluorocyclobutane (PFCB) host matrix under monochromatic excitation. Maximum internal and external UC-QYs of 8.4% ± 0.8% and 6.5% ± 0.7%, respectively, have been achieved for 1523 nm excitation of 970 ± 43 Wm−2 for an optimum Er3+ concentration of 25 mol% and a phosphor concentration of 84.9 w/w% in the matrix. These results correspond to normalized internal and external efficiencies of 0.86 ± 0.12 cm2 W−1 and 0.67 ± 0.10 cm2 W−1, respectively. These are the highest values ever reported for β-NaYF4:Er3+ under monochromatic excitation. The special characteristics of both the UC phosphor β-NaYF4:Er3+ and the PFCB matrix give rise to this outstanding property. Detailed power and time dependent luminescence measurements reveal energy transfer upconversion as the dominant UC mechanism.

Asymptotic freedom, dimensional transmutation, and an infrared conformal fixed point for the δ-function potential in one-dimensional relativistic quantum mechanics

We consider the Schrödinger equation for a relativistic point particle in an external one-dimensional δ-function potential. Using dimensional regularization, we investigate both bound and scattering states, and we obtain results that are consistent with the abstract mathematical theory of self-adjoint extensions of the pseudodifferential operator H=p2+m2−−−−−−−√. Interestingly, this relatively simple system is asymptotically free. In the massless limit, it undergoes dimensional transmutation and it possesses an infrared conformal fixed point. Thus it can be used to illustrate nontrivial concepts of quantum field theory in the simpler framework of relativistic quantum mechanics.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

InAs/GaAs1−xSbx Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

Resummation of infrared divergences in the free energy of spin-two fields

We derive a closed form expression for the sum of all the infrared divergent contributions to the free energy of a gas of gravitons. An important ingredient of our calculation is the use of a gauge fixing procedure such that the graviton propagator becomes both traceless and transverse. This has been shown to be possible, in a previous work, using a general gauge fixing procedure, in the context of the lowest order expansion of the Einstein-Hilbert action, describing noninteracting spin-two fields. In order to encompass the problems involving thermal loops, such as the resummation of the free energy, in the present work, we have extended this procedure to the situations when the interactions are taken into account.

Dynamic polarizability, Cauchy moments, and the optical absorption spectrum of liquid water: A sequential molecular dynamics/quantum mechanical approach

The dynamic polarizability and optical absorption spectrum of liquid water in the 6-15 eV energy range are investigated by a sequential molecular dynamics (MD)/quantum mechanical approach. The MD simulations are based on a polarizable model for liquid water. Calculation of electronic properties relies on time-dependent density functional and equation-of-motion coupled-cluster theories. Results for the dynamic polarizability, Cauchy moments, S(-2), S(-4), S(-6), and dielectric properties of liquid water are reported. The theoretical predictions for the optical absorption spectrum of liquid water are in good agreement with experimental information.