Electrical property and characterization of nano-SnO2/wollastonite composite materials

Nano-tin oxide was deposited on the surface of wollastonite using the mixed solution including stannic chloride pentahydrate precursor and wollastonite by a hydrolysis precipitation process. The antistatic properties of the wollastonite materials under different calcined conditions and composite materials (nano-SnO2/wollastonite, SW) were measured by rubber sheeter and four-point probe (FPP) sheet resistance measurement. Effects of hydrolysis temperature and time, calcination temperature and time, pH value and nano-SnO2 coating amount on the resistivity of SW powders were studied, and the optimum experimental conditions were obtained. The microstructure and surface properties of wollastonite, precipitate and SW were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), specific surface area analyzer (BET), thermogravimetry (TG), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Fourier translation infrared spectroscopy (FTIR) respectively. The results showed that the nano-SnO2/wollastonite composite materials under optimum preparation conditions showed better antistatic properties, the resistivity of which was reduced from 1.068 × 104 Ω cm to 2.533 × 103 Ω cm. From TG and XRD analysis, the possible mechanism for coating of SnO2 nanoparticles on the surface of wollastonite was proposed. The infrared spectrum indicated that there were a large number of the hydroxyl groups on the surface of wollastonite. This is beneficial to the heterogeneous nucleation reaction. Through morphology, EDS and XPS analysis, the surface of wollastonite fiber was coated with a layer of 10–15 nm thickness of tin oxide grains the distribution of which was uniform.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.

Synthesis, structural characterization and electrical property of new oxide ion conductors: La3MMo2O12 (M = In, Ga and Al)

New series of oxides, La3MMo2O12 (M = In, Ga and Al), have been prepared by the solid-state reaction. The composition and elemental distribution were analyzed by the energy-dispersive X-ray (EDX) analysis. As determined by the X-ray diffraction (XRD), these compounds have similar crystal structures that can be indexed on a monoclinic cell at room temperature. AC impedance spectra and the DC electrical conductivity measurements in various atmospheres indicate that they are oxide ion conductors with ionic conductivities between 10(-2) and 10(-3) S/cm at 800 degrees C. The conductivity decreases in the order of La3GaMo2O12 > La3AlMo2O12 > La3InMo2O12, implying that the effect of cell volume and polarization associated with In3+, Ga3+ and Al3+ play an important role in the anion transport of these materials. The reversible phase transition was observed in all these compounds as confirmed by the differential thermal analysis (DTA) and dilatometric measurements.

Characterization of physio-chemical processes and hydration kinetics in concretes containing supplementary cementitious materials using electrical property measurements

The current study monitors both the short- and long-term hydration characteristics of concrete using discretized conductivity measurements from initial gauging, through setting and hardening, the latter comprising both the curing and post-curing periods. In particular, attention is directed to the near-surface concrete as it is this zone which protects the steel from the external environment and has a major influence on durability, performance and service-life. A wide range of concrete mixes is studied comprising both plain Portland cement concretes and concretes containing fly-ash and ground granulated blast furnace slag. The parameter normalised conductivity was used to identify four distinct stages in the hydration process and highlight the influence of supplementary cementitious materials (SCM) on hydration and hydration kinetics. A relationship has been presented to account for the temporal decrease in conductivity, post 10-days hydration. The testing procedure and methodology presented lend itself to in-situ monitoring of reinforced concrete structures. (c) 2013 Elsevier Ltd. All rights reserved.

Nuclear relaxation contribution to static and dynamic (infinite frequency approximation) nonlinear optical properties by means of electrical property expansions: Application to HF, CH4, CF4, and SF6

Electrical property derivative expressions are presented for the nuclear relaxation contribution to static and dynamic (infinite frequency approximation) nonlinear optical properties. For CF4 and SF6, as opposed to HF and CH4, a term that is quadratic in the vibrational anharmonicity (and not previously evaluated for any molecule) makes an important contribution to the static second vibrational hyperpolarizability of CF4 and SF6. A comparison between calculated and experimental values for the difference between the (anisotropic) Kerr effect and electric field induced second-harmonic generation shows that, at the Hartree-Fock level, the nuclear relaxation/infinite frequency approximation gives the correct trend (in the series CH4, CF4, SF6) but is of the order of 50% too small

Effect of polyol excess on the electrical property of vegetable-polyurethane film

Freestanding castor oil-based polyurethane (PU) film was obtained using spin-coating method. The effect of polyol content was analysed by means of thermally stimulated depolarisation current and AC dielectric measurements techniques. Two relaxation peaks were observed in the temperature range of -40 to 60 degrees C for PU with different polyol contents. The presence of polyol excess provides a shift to lower temperature of the a relaxation and the decrease in the activation energy of the transition in this region might be attributed to the plasticising effect of the polyol. The peak at higher temperature is due to the Maxwell-Wagner-Sillars relaxation, which also shifts in the low temperature direction as the polyol content is increased.

Effect of polyol excess on the electrical property of vegetable-polyurethane film

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method

The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical conductivity of the SnO2 thin film, resulting in a nanostructured material. The nanostructured Sb-doped SnO2 thin films present high electrical conductivity, even in the presence of high porosity, supporting the hypothesis that nanostructured material must possess strong electrical conductivity. This work involves important aspects that can be applied to the development of high performance transparent conducting thin film. (C) 2003 Elsevier B.V. All rights reserved.

Structural, thermal and electrical characterization of NdLiMo2O8 electroceramics, using impedance spectroscopy

We report electrical property of a polycrystalline NdLiMo2O8 ceramics using complex impedance analysis. The material shows temperature dependent electrical relaxation phenomena. The d.c. conductivity shows typical Arrhenius behavior, when observed as a function of temperature. The a.c. conductivity is found to obey Jonscher's universal power law. The material was prepared in powder form by a standard solid-state reaction technique. Material formation and crystallinity have been confirmed by X-ray diffraction studies. Impedance measurements have been performed over a range of temperatures and frequencies. The results have been analyzed in the complex plane formalism and suitable equivalent circuits have been proposed in different regions. The role of bulk and grain boundary effect in the overall electrical conduction process is discussed with proper justification. (C) 2011 Elsevier Ltd. All rights reserved.

Dielectric and electrical conductivity properties of multi-stage spark plasma sintered HA-CaTiO3 composites and comparison with conventionally sintered materials

One of the different issues limiting the wider application of monolithic hydroxyapatite (HA) as an ideal bone replacement material is the lack of reasonably good electrical transport properties. The comprehensive electrical property characterization to evaluate the efficacy of processing parameters in achieving the desired combination of electroactive properties is considered as an important aspect in the development of HA-based bioactive material. In this perspective, the present work reports the temperature (RT-200 degrees C) and frequency (100 Hz-1 MHz) dependent dielectric properties and AC conductivity for a range of HA-CaTiO3 (HA-CT) composites, densified using both conventional pressureless sintering in air as well as spark plasma sintering in vacuum. Importantly, the AC conductivity of spark plasma sintered ceramics similar to upto 10(-5) (Omega cm)(-1)] are found to be considerably higher than the corresponding pressureless sintered ceramics similar to upto 10(-8) (Omega cm)(-1)]. Overall, the results indicate the processing route dependent functional properties of HA-CaTiO3 composites as well as related advantages of spark plasma sintering route. (C) 2013 Elsevier Ltd. All rights reserved.

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Structure and electrical properties of Pr ans Sm doped CeO2 and Ce2MoO15 based solid electrolytes

Sin and Pr doped CeO2 and Ce6MoO15 based materials were synthesized by sol-gel method. The structure of the powders were characterized by X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy(FE-SEM) and the electrical conductivity of the samples was investigated by AC impedance spectroscopy. By comparing the structure and electrical properties of different systems, it could be concluded that the electrical property of Ce6MoO15 based system is better than that of CeO2 system. The added Mo element resulted in the increase of gain size and improved the grain boundary conductivity notably below 600 degrees C, while the Pr dopant induced the smaller grain size and improved the grain boundary conductivity of the materials.

Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine

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