Origin of carrier-type reversal in Pb-Ge-Se glasses: A detailed thermal, electrical, and structural study

A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb-Ge-Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0-20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band structures of Ge-Se glasses has been considered. The p -->n transition has been attributed to the energetic disposition of the sp(3)d(2) band of Pb atoms, which is located closely above the lone pair band of selenium. This feature makes Pb unique in the context of p -->n transition of chalcogenide glasses. The model can be extended successfully to account for the CTR behavior observed in Bi containing chalcogenide glasses also.

The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy

The role played by defects in bringing out n-type conduction in Ge20Se80-xBix and Ge20Se70-xBixTe10 glasses is using investigated photoluminescence (PL) spectroscopy. It was found that for both the systems, the compositions at lower Bi content exhibit luminescence with fine features associated while the compositions that show n-type conduction do not exhibit luminescence. The identification of the associated fine features, carried out by deconvoluting the experimental spectra, reveals that Bi addition brings out a relative diminishing in D+ defects as compared to D- ones. The study gives an overall indication for the role played by native defects in bringing out n-type conduction in Bi-doped glasses.

Thermal transport, photoconduction and electrical switching in selected chalcogenide glasses exhibiting carrier type reversal

Department of Instrumentation, Cochin University of Science and Technology

Thermal anomalies in ternary Ge42-xPbxSe58 glasses near the charge carrier reversal threshold

The carrier type reversal (CTR) from p- to n-type in semiconducting chalcogenide glasses is an important and a long standing problem in glass science. Ge-Se glasses exhibit CTR when the metallic elements Bi and Pb are added. For example, bulk Ge42-xSe58Pbx glasses exhibit CTR around 8-9 at. % of Pb. These glasses have been prepared by melt quenching method. Glass transition temperature (T-g), Specific heat change between the liquid and the glassy states (Delta C-p) at T-g and the nonreversing heat flow (Delta H-nr) measured by modulated differential scanning calorimetry exhibit anomalies at 9 at. % of Pb. These observed anomalies are interpreted on the basis of the nano scale phase separation occurring in these glasses.

Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization

Electrical measurements have been performed on poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included current-voltage measurements, capacitance-voltage measurements, capacitance-transient spectroscopy, and admittance spectroscopy. The measurements show evidence for large minority-carrier injection into the polymer possibly enabled by interface states for which evidence is also found. The shallow acceptor level depth (0.12 eV) and four deep trap level activation energies (0.30 and 1.0 eV majority-carrier type; 0.48 and 1.3 eV minority-carrier type) are found. Another trap that is visible at room temperature has point-defect nature. (C) 2001 American Institute of Physics.

Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.

Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy

Semiconducting chalcogenide glasses in the systems GeSe and GeSeTe with the addition of bismuth show unusual phenomena of p - to - n transition. Samples for characterization were prepared in bulk form by melt-quenching technique, with increasing Bi at. % to replace selenium. Photoluminescence (PL) spectroscopic studies on all the samples were carried out at 4.2K using an Ar-Ion laser for illuminating the samples. The laser power used was 200mw. Both the systems show a decrease in the intensity of PL signal with increasing Bi content. This interesting behavior is discussed on the basis of a charged defect model for chalcogenide glasses, proposed by Mott, Davis and Street (MDS). The effect of bismuth addition on these charged defects is also discussed to explain the carrier type reversal.

Novel Delivery Systems for Transdermal and Intradermal Drug Delivery

This research book covers the major aspects relating to the use of novel delivery systems in enhancing both transdermal and intradermal drug delivery. It provides a review of transdermal and intradermal drug delivery, including the history of the field and the various methods employed to produce delivery systems from different materials such as device design, construction and evaluation, so as to provide a sound background to the use of novel systems in enhanced delivery applications.

Furthermore, it presents in-depth analyses of recent developments in this exponentially growing field, with a focus on microneedle arrays, needle-free injections, nanoparticulate systems and peptide-carrier-type systems. It also covers conventional physical enhancement strategies, such as tape-stripping, sonophoresis, iontophoresis, electroporation and thermal/suction/laser ablation Discussions about the penetration of the stratum corneum by the various novel strategies highlight the importance of the application method. Comprehensive and critical reviews of transdermal and intradermal delivery research using such systems focus on the outcomes of in vivoanimal and human studies. The book includes laboratory, clinical and commercial case studies featuring safety and patient acceptability studies carried out to date, and depicts a growing area for use of these novel systems is in intradermal vaccine delivery. The final chapters review recent patents in this field and describe the work ongoing in industry.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Untersuchung der Adhäsionskräfte in interaktiven Pulvermischungen zur Inhalation und deren Veränderung in Abhängigkeit von der Dichtigkeit der Verpackung

Die Untersuchung der Adhäsionskräfte mit Colloid Probe Technik, einer Weiterentwicklung der Rasterkraftmikroskopie (Atomic Force Microscopy=AFM), an erzeugten Carrier- und Wirkstoffkristallen bei Laborbedingungen und unter Einfluss der Luftfeuchte zeigte, dass die Adhäsion von Tiotropiumbromid Monohydrat an Mannitol deutlich höher ist als an Lactose Monohydrat. Die Kohäsionskräfte des Wirkstoffes sind stärker als die Adhäsionskräfte an Carriermaterialien. Auf dieser Grundlage wurde die Hypothese aufgestellt, dass eine Mischung mit Mannitol als Carrier eine kleinere Feinpartikeldosis liefert als eine Mischung mit Lactose. Diese Theorie wurde an interaktiven Pulvermischungen unter Variation von verschiedenen Einflussfaktoren überprüft. Die binare und ternäre Lactose-basierte Mischung lieferte unabhängig vom Kapselmaterial (Gelatine- und Polyethylenkapsel) eine höhere Feinpartikeldosis als die entsprechenden Mannitol-basierten Formulierungen. Die ternäre Komponente bewirkte nur bei Mannitol-basierten Mischungen eine Verbesserung der Feinpartikeldosis. Die detaillierte Untersuchung der aerodynamischen Verteilung ternärer Mischungen zeigte, dass das Kapselmaterial nur unter dem Einfluss der Luftfeuchte und Permeabilität der Blisterverpackung die interpartikulären Wechselwirkungen beeinflusst. Mischungen mit Mannitol als Carrier lieferten unabhängig vom Kapselmaterial, von Luftfeuchte/Lagerungsbedingungen und Permeabilität der Blisterverpackung eine kleinere Feinpartikeldosis als Mischungen mit Lactose als Carrier. Die Carrierart, die Permeabilität der Blisterverpackung und die Luftfeuchte wurden als Haupteinflussfaktoren auf die aerodynamischen Eigenschaften identifiziert. Es konnte gezeigt werden, dass AFM einen wertvollen Beitrag zum Verständnis der interpartikulären Wechselwirkungen leistet und aufgrund prädiktiver Eigenschaften hilfreich in der Entwicklung inhalativer Darreichungs-formen sein kann.

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

El cambio en la designación general de material (DGM) de las AACR a las RDA : Definición de los atributos tipo de contenido, tipo de medio y tipo de soporte

Se aborda el estudio de los atributos tipo de contenido, tipo de medio y tipo de soporte definidos por el código de catalogación Resource Description and Access (RDA) para solucionar los problemas que presentaba la lista de términos utilizadas para registrar la designación general de material (DGM) en las Anglo American Cataloging Rules (AACR). Los términos eran ambiguos combinando aspectos referidos al contenido y clase de material del recurso. Se parte de una exhaustiva revisión bibliográfica y del estudio de los documentos que se generaron en el proceso de elaboración del nuevo código. Se menciona el trabajo conjunto entre el Joint Steering Committee (JSC) y el estándar ONIX para el establecimiento de criterios que permitieron definir estos tres atributos, así como el aporte del modelo FRBR en la definición de los mismos. Se presentan ejemplos de registros bibliográficos donde se utilizan estos tres atributos en formato MARC21, ISBD consolidada a partir de la definición del área 0 y en el esquema de metadatos Dublin Core. Se finaliza destacando la necesidad de continuar con investigaciones que permitan concluir sobre la adecuación de estos tres atributos a las necesidades de los catalogadores, usuarios y a la realidad tecnológica

El cambio en la designación general de material (DGM) de las AACR a las RDA : Definición de los atributos tipo de contenido, tipo de medio y tipo de soporte

Se aborda el estudio de los atributos tipo de contenido, tipo de medio y tipo de soporte definidos por el código de catalogación Resource Description and Access (RDA) para solucionar los problemas que presentaba la lista de términos utilizadas para registrar la designación general de material (DGM) en las Anglo American Cataloging Rules (AACR). Los términos eran ambiguos combinando aspectos referidos al contenido y clase de material del recurso. Se parte de una exhaustiva revisión bibliográfica y del estudio de los documentos que se generaron en el proceso de elaboración del nuevo código. Se menciona el trabajo conjunto entre el Joint Steering Committee (JSC) y el estándar ONIX para el establecimiento de criterios que permitieron definir estos tres atributos, así como el aporte del modelo FRBR en la definición de los mismos. Se presentan ejemplos de registros bibliográficos donde se utilizan estos tres atributos en formato MARC21, ISBD consolidada a partir de la definición del área 0 y en el esquema de metadatos Dublin Core. Se finaliza destacando la necesidad de continuar con investigaciones que permitan concluir sobre la adecuación de estos tres atributos a las necesidades de los catalogadores, usuarios y a la realidad tecnológica

El cambio en la designación general de material (DGM) de las AACR a las RDA : Definición de los atributos tipo de contenido, tipo de medio y tipo de soporte

Se aborda el estudio de los atributos tipo de contenido, tipo de medio y tipo de soporte definidos por el código de catalogación Resource Description and Access (RDA) para solucionar los problemas que presentaba la lista de términos utilizadas para registrar la designación general de material (DGM) en las Anglo American Cataloging Rules (AACR). Los términos eran ambiguos combinando aspectos referidos al contenido y clase de material del recurso. Se parte de una exhaustiva revisión bibliográfica y del estudio de los documentos que se generaron en el proceso de elaboración del nuevo código. Se menciona el trabajo conjunto entre el Joint Steering Committee (JSC) y el estándar ONIX para el establecimiento de criterios que permitieron definir estos tres atributos, así como el aporte del modelo FRBR en la definición de los mismos. Se presentan ejemplos de registros bibliográficos donde se utilizan estos tres atributos en formato MARC21, ISBD consolidada a partir de la definición del área 0 y en el esquema de metadatos Dublin Core. Se finaliza destacando la necesidad de continuar con investigaciones que permitan concluir sobre la adecuación de estos tres atributos a las necesidades de los catalogadores, usuarios y a la realidad tecnológica

Filmes de óxido de zinco e nitreto de zinco depositados por magnetron sputtering com diferentes pressões de argônio, oxigênio e nitrogênio.

O óxido de zinco é um material semicondutor que apresenta alta transparência óptica no espectro visível, alta energia de ligação de éxcitons e piezoeletricidade. Por suas propriedades, ele é utilizado na área de sensores, eletrodos transparentes e dispositivos optoeletrônicos. No entanto, sua utilização ainda é limitada pela dificuldade de obtenção de condutividade tipo p, cujo principal dopante é o nitrogênio, devido à assimetria de dopagem ocasionada por defeitos intrínsecos do material, dopagem em valências diferentes das esperadas e formação de níveis de aceitadores profundos na banda proibida. A aplicação em dispositivos piezoelétricos também exige alta resistividade e ótimas propriedades cristalinas. Muitos processos de deposição estabelecidos hoje ainda utilizam altas temperaturas, o que impede sua deposição sobre superfícies ou substratos sensíveis a altas temperaturas. O objetivo deste trabalho é desenvolver técnicas de deposição de filmes de ZnO, principalmente em baixas temperaturas ( 100°C), pelo método de magnetron sputtering de rádio frequência, para avaliar a influência dos gases de processo nas características estruturais, estequiométricas, elétricas e ópticas dos filmes. Para isso, foram obtidos filmes utilizando pressão total de argônio, e pressões parciais de argônio e oxigênio e argônio e nitrogênio, utilizando alvo cerâmico de óxido de zinco ou alvo metálico de zinco. Para alvo de ZnO, filmes com condutividade tipo n foram obtidos em ambiente de argônio, em condições que geraram deficiências de oxigênio. Filmes altamente resistivos foram obtidos com a utilização de pressão parcial de oxigênio no gás de processo, em condições que resultaram em filmes estequiométricos, inclusive com condutividade tipo p. Condutividade tipo p mais alta foi observada, apenas por ponta quente, para uma amostra obtida em argônio logo após a utilização de nitrogênio na câmara de processo, que provavelmente sofreu influência da dopagem não intencional do cobre, que foi identificado como um contaminante do processo devido à estrutura da câmara. Para alvo de Zn, observou-se a formação de nitreto de zinco, que demonstrou alta capacidade de oxidação em ambiente atmosférico, e portanto, transforma-se naturalmente ao longo do tempo ou por processos de oxidação térmica em ZnO dopado com nitrogênio. Filmes de ZnO produzidos a partir de nitreto de zinco foram os únicos dos testados que apresentaram fotoluminescência característica do ZnO, mesmo para processos onde não houve aquecimento intencional.