Deuxieme Maison

The second building was completed on January 15th, 1973 at FIU's Modesto Maidique Campus (MMC), formerly known as University Park Campus. The building architects were Grove, Haack & Associates of Fort Lauderdale.

Contraceptive changes after reproductive events among Australian women born in 1973 to 1978: A longitudinal study from 1996 to 2009

Background Women change contraception as they try to conceive, space births, and limit family size. This longitudinal analysis examines contraception changes after reproductive events such as birth, miscarriage or termination among Australian women born from 1973 to 1978 to identify potential opportunities to increase the effectiveness of contraceptive information and service provision. Methods Between 1996 and 2009, 5,631 Australian women randomly sampled from the Australian universal health insurance (Medicare) database completed five self-report postal surveys. Three longitudinal logistic regression models were used to assess the associations between reproductive events (birth only, birth and miscarriage, miscarriage only, termination only, other multiple events, and no new event) and subsequent changes in contraceptive use (start using, stop using, switch method) compared with women who continued to use the same method. Results After women experienced only a birth, or a birth and a miscarriage, they were more likely to start using contraception. Women who experienced miscarriages were more likely to stop using contraception. Women who experienced terminations were more likely to switch methods. There was a significant interaction between reproductive events and time indicating more changes in contraceptive use as women reach their mid-30s. Conclusion Contraceptive use increases after the birth of a child, but decreases after miscarriage indicating the intention for family formation and spacing between children. Switching contraceptive methods after termination suggests these pregnancies were unintended and possibly due to contraceptive failure. Women’s contact with health professionals around the time of reproductive events provides an opportunity to provide contraceptive services.

Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS

A built-in-self-test (BIST) subsystem embedded in a 65-nm mobile broadcast video receiver is described. The subsystem is designed to perform analog and RF measurements at multiple internal nodes of the receiver. It uses a distributed network of CMOS sensors and a low bandwidth, 12-bit A/D converter to perform the measurements with a serial bus interface enabling a digital transfer of measured data to automatic test equipment (ATE). A perturbation/correlation based BIST method is described, which makes pass/fail determination on parts, resulting in significant test time and cost reduction.

Time-Based All-Digital Technique for Analog Built-in Self-Test

A scheme for built-in self-test of analog signals with minimal area overhead for measuring on-chip voltages in an all-digital manner is presented. The method is well suited for a distributed architecture, where the routing of analog signals over long paths is minimized. A clock is routed serially to the sampling heads placed at the nodes of analog test voltages. This sampling head present at each test node, which consists of a pair of delay cells and a pair of flip-flops, locally converts the test voltage to a skew between a pair of subsampled signals, thus giving rise to as many subsampled signal pairs as the number of nodes. To measure a certain analog voltage, the corresponding subsampled signal pair is fed to a delay measurement unit to measure the skew between this pair. The concept is validated by designing a test chip in a UMC 130-nm CMOS process. Sub-millivolt accuracy for static signals is demonstrated for a measurement time of a few seconds, and an effective number of bits of 5.29 is demonstrated for low-bandwidth signals in the absence of sample-and-hold circuitry.

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots (QDs), which are grown at relative low temperature (460degreesC) and embedded in GaAs p-i-n structure, have been studied by dc-biased electroreflectance. Franz-Keldysh oscillations from the undoped GaAs layer are used to determine the electric field under various bias voltages. Stark shift of -34 meV for the ground-state interband transition of the QDs is observed when the electric field increases from 105 to 308 kV/cm. The separation of the electron and hole states in the growth direction of 0.4 nm, corresponding to the built-in dipole moment of 6.4x10(-29) C m, is determined. It is found that the electron state lies above that of the hole, which is the same as that predicted by theoretical calculations for ideal pyramidal InAs QDs. (C) 2004 American Institute of Physics.

Can nuclear power plants be built in Britain without public subsidies and guarantees?

This report examines the credibility of the claim by the UK government that nuclear power plants can be built in the UK without public subsidies and guarantees

Board-level prototype validation: a built-in controller and extended BST architecture

Prototype validation is a major concern in modern electronic product design and development. Simulation, structural test, functional and timing debug are all forming parts of the validation process, although very often addressed as dissociated tasks. In this paper we describe an integrated approach to board-level prototype validation, based on a set of mandatory/optional BST instructions and a built-in controller for debug and test, that addresses the late mentioned tasks as inherent parts of a whole process

A study of selected factors influencing the reproductive performance of the common tern (Sterna hirundo) at Port Colborne, Ontario in 1973 and 1974

Several study areas were investigated at two Port Colborne terneries during the summers of 1973 and 1974 in an attempt to determine the influence of clutch size, time of clutch initiation, position in the colony, proximity to Ring-billed Gulls, vegetation and nesting substrate on the reproductive performance of the Common Tern. Hatching success and reproductive success (the number of chicks fledged per egg laid) were generally higher for 3-egg than 2-egg clutches but fledging (the number of chicks fledged per egg hatched) success was usually independant of clutch size. Hatching, fledging and reproductive success declined as a function of time of clutch initiation. Mean clutch sizes also generally declined as a function of time. Nests located in the center of the colony exhibited higher fledging success than those on the periphery. Rock-based clutches had a lower hatching success than clutches initiated on sand or dried vegetation. Reproductive performance did not appear to be related to proximity to Ring-billed Gulls or vegetation within the study area.

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

An accurate low-voltage analog memory-cell with built-in multiplication

A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.