Proglacial river dataset from the Akuliarusiarsuup Kuua River northern tributary, Southwest Greenland, 2008 - 2013, version 2.0

The dataset contains measurements of river stage and discharge for one sites along the Akuliarusiarsuup Kuua River's northern tributary, with 30 minute temporal resolution between June 2008 and August 2013 This river is a tributary to the Watson River discharging into Kangerlussuaq Fjord by the town of Kangerlussuaq, Southwest Greenland. Additional data of water temperature, air pressure are also provided. Compared to version 1.0 of the dataset, this dataset used a total of 36 in situ discharge observations collected between 2008 and 2012 to construct the rating curve. Furthermore, data of Station AK-004-001 between 2010-09-06T11:30 to 2010-09-07T13:30 have been removed from version 2.0 because these values were likely caused by backflow when a jokulhlaup from a large glacier dammed lake caused increased water levels in the downstreams lake. Thus, data measured at AK-004-001 between 2010-09-06T11:30 to 2010-09-07T13:30 are not representative for the AK-004 catchment.

Proglacial river dataset from the Akuliarusiarsuup Kuua River northern tributary, Southwest Greenland, 2008 - 2010, version 1.0

Pressing scientific questions concerning the Greenland ice sheet's climatic sensitivity, hydrology, and contributions to current and future sea level rise require hydrological datasets to resolve. While direct observations of ice sheet meltwater losses can be obtained in terrestrial rivers draining the ice sheet and from lake levels, few such datasets exist. We present a new dataset of meltwater river discharge for the vicinity of Kangerlussuaq, Southwest Greenland. The dataset contains measurements of river stage and discharge for three sites along the Akuliarusiarsuup Kuua (Watson) River's northern tributary, with 30 minute temporal resolution between June 2008 and August 2010. Additional data of water temperature, air pressure, and lake water depth and temperature are also provided. Discharge data were measured at sites with near-ideal properties for such data collection. Regardless, high water bedload and turbulent flow introduce considerable uncertainty. These were constrained and quantified using statistical techniques, thereby providing a high quality dataset from this important site. The greatest data uncertainties are associated with streambed elevation change and measurements. Large portions of stream channels deepened according to statistical tests, but poor precision of streambed depth measurements also added uncertainty. Quality checked data are freely available for scientific use as supplementary online material.

Structural characterization of cubic GaN grown on GaAs(001) substrates

Structural characteristics of cubic GaN epilayers grown on GaAs(001) were studied using X-ray double-crystal diffraction technique. The structure factors of cubic GaN(002) and (004) components are approximately identical. However, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. The discrepancy has been interpreted in detail considering other factors. In the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. These two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. Moreover, the peak broadening was analysed by reciprocal lattice construction and Eward sphere. By using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. The fully relaxed lattice parameter of cubic GaN was determined to be about 0.451 +/- 0.001nm.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Plan de acción Petroductos Ltda. Enero 2.003- Diciembre 2.004

Toda empresa debe buscar su permanencia en el tiempo y el éxito o fracaso de ese propósito depende de la manera en que la organización anticipe el futuro basada en su experiencia, el conocimiento de su objeto, su entorno, sus limitantes y capacidades