4 resultados para ferroelectric
em Scielo Saúde Pública - SP
Resumo:
Synthetic methods used for the synthesis of the Ferroelectric Liquid Crystals (FLCs) will be considered with emphasis on the chiral synthesis methodologies and mesomorphic electrooptical properties.
Resumo:
The ferroelectric compound LiNbO3 was prepared by the polymeric precursors method in the polycrystalline form containing different concentrations of Eu3+. The compounds were characterized by X-ray diffraction, vibrational and electronic spectroscopy. Electronic spectroscopy was shown to be sensitive to small concentrations of contaminating phases allowing a good control of the compound purity. The presence of Eu3+ ions leads to the formation of the LiNb3O8 phase in the range of 500 to 800 °C. Above this temperature range LiNbO3 and tetragonal (T') EuNbO4 were obtained.
Resumo:
KSr2Nb5O15 is a ferroelectric material. The sintering process of the KSr2Nb5O15 ceramic doped with different amounts of CuO was investigated in this research. It was found that CuO is effective as promoter of the densification process of the KSN ceramic. The developed microstructures were different due to the amount of CuO and secondary phases were observed in the microstructures. However, the results of X - ray diffraction showed that only the tetragonal tungsten bronze (TTB) structure was identified in all the investigated ceramic systems. The thermal behavior of CuO and also of the CuO - KSN phase mixture was investigated by thermal analysis.
Resumo:
ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.