21 resultados para Semiconductor wafers


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The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis). It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well.

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In this study, photoelectrochemical solar cells based on bismuth tungstate electrodes were evaluated. Bi2WO6 was synthesized by a hydrothermal method and characterized by scanning electron microscopy, UV-Vis reflectance spectroscopy, and X-ray powder diffraction. For comparison, solar cells based on TiO2 semiconductor electrodes were evaluated. Photoelectrochemical response of Grätzel-type solar cells based on these semiconductors and their corresponding sensitization with two inexpensive phthalocyanines dyes were determined. Bi2WO6-based solar cells presented higher values of photocurrent and efficiency than those obtained with TiO2 electrodes, even without sensitization. These results portray solar cells based on Bi2WO6 as promising devices for solar energy conversion owing to lower cost of production and ease of acquisition.

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In this manuscript, a BiVO4 semiconductor was synthesized by solution combustion synthesis using different fuels (Alanine, Glycine and Urea). Also, the Tween® 80 surfactant was added during synthesis. BiVO4 was characterized by XRD, SEM and diffuse reflectance spectroscopy. Photocatalytic activity was evaluated by the discoloration of methylene blue at 664 nm under UV-visible light irradiation. According to XRD, the monoclinic phase of BiVO4 was obtained for the samples. The smallest particle size and highest k obs value were observed for the BiVO4/alanine sample, which promoted greater demethylation of methylene blue.

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ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

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Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. Low-intensity red and near-infrared lasers are considered safe for use in clinical applications. However, adverse effects can occur via free radical generation, and the biological effects of these lasers from unusually high fluences or high doses have not yet been evaluated. Here, we evaluated the survival, filamentation induction and morphology of Escherichia coli cells deficient in repair of oxidative DNA lesions when exposed to low-intensity red and infrared lasers at unusually high fluences. Cultures of wild-type (AB1157), endonuclease III-deficient (JW1625-1), and endonuclease IV-deficient (JW2146-1) E. coli, in exponential and stationary growth phases, were exposed to red and infrared lasers (0, 250, 500, and 1000 J/cm2) to evaluate their survival rates, filamentation phenotype induction and cell morphologies. The results showed that low-intensity red and infrared lasers at high fluences are lethal, induce a filamentation phenotype, and alter the morphology of the E. coli cells. Low-intensity red and infrared lasers have potential to induce adverse effects on cells, whether used at unusually high fluences, or at high doses. Hence, there is a need to reinforce the importance of accurate dosimetry in therapeutic protocols.