2 resultados para metallic tantalum

em Digital Commons at Florida International University


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This thesis studies the adsorption of molecules with different binding strengths onto copper nanowires with prestabilized conductance values fabricated by an electrochemical method. Since the diameters of these wires are comparable to the wavelength of conduction electrons the conductance of the nanowires is quantized, and the adsorption of even a few molecules onto atomically thin wires changes the conductance from integer values to fractional ones. These changes are proportional to the binding strength of the adsorbed molecules. The decrease in conductance is hypothesized to be caused by the scattering of the conduction electrons by the adsorbed molecules. The sensitivity of molecular adsorption-induced conductance change can be used for the development of a chemical sensor. The stabilized copper nanowires obtained in this thesis may also be used for other purposes, such as interconnecting conductors between nanodevices and digital switches in functional nanoelectronic circuitry.

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Hypersonic aerospace vehicles are severely limited by the lack of adequate high temperature materials that can withstand the harsh hypersonic environment. Tantalum carbide (TaC), with a melting point of 3880°C, is an ultrahigh temperature ceramic (UHTC) with potential applications such as scramjet engines, leading edges, and zero erosion nozzles. However, consolidation of TaC to a dense structure and its low fracture toughness are major challenges that make it currently unviable for hypersonic applications. In this study, Graphene NanoPlatelets (GNP) reinforced TaC composites are synthesized by spark plasma sintering (SPS) at extreme conditions of 1850˚C and 80-100 MPa. The addition of GNP improves densification and enhances fracture toughness of TaC by up to ~100% through mechanisms such as GNP bending, sliding, pull-out, grain wrapping, crack bridging, and crack deflection. Also, TaC-GNP composites display improved oxidation behavior over TaC when exposed to a high temperature plasma flow exceeding 2500 ˚C.