Analysis of the lateral diffuse metal-oxide semiconductor (LDMOS) power amplifier for cellular base stations

The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is a new transistor model that includes self-heating affects and is capable of small-large signal simulations. It allows for most of the design considerations to be on stability, power gain, bandwidth, and DC requirements. The matching technique allows for the gain to be maximized at a specific target frequency. Calculations and simulations for the microwave power amplifier design were performed using Matlab and Microwave Office respectively. Microwave Office is the simulation software used in this thesis. The study demonstrated that Motorola's Electro Thermal LDMOS transistor in microwave power amplifier design process is a viable solution for common-source amplifier applications in high power base stations. The MET-LDMOS met the stability requirements for the specified frequency range without a stability-improvement model. The power gain of the amplifier circuit was improved through proper microwave matching design using input/output-matching techniques. The gain and efficiency of the amplifier improve approximately 4dB and 7.27% respectively. The gain value is roughly .89 dB higher than the maximum gain specified by the MRF21010 data sheet specifications. This work can lead to efficient modeling and development of high power LDMOS transistor implementations in commercial and industry applications.

Modeling of shape memory alloys with plasticity

Shape memory alloys are a special class of metals that can undergo large deformation yet still be able to recover their original shape through the mechanism of phase transformations. However, when they experience plastic slip, their ability to recover their original shape is reduced. This is due to the presence of dislocations generated by plastic flow that interfere with shape recovery through the shape memory effect and the superelastic effect. A one-dimensional model that captures the coupling between shape memory effect, the superelastic effect and plastic deformation is introduced. The shape memory alloy is assumed to have only 3 phases: austenite, positive variant martensite and negative variant martensite. If the SMA flows plastically, each phase will exhibit a dislocation field that permanently prevents a portion of it from being transformed back to other phases. Hence, less of the phase is available for subsequent phase transformations. A constitutive model was developed to depict this phenomena and simulate the effect of plasticity on both the shape memory effect and the superelastic effect in shape memory alloys. In addition, experimental tests were conducted to characterize the phenomenon in shape memory wire and superelastic wire. ^ The constitutive model was then implemented in within a finite element context as UMAT (User MATerial Subroutine) for the commercial finite element package ABAQUS. The model is phenomenological in nature and is based on the construction of stress-temperature phase diagram. ^ The model has been shown to be capable of capturing the qualitative and quantitative aspects of the coupling between plasticity and the shape memory effect and plasticity and the super elastic effect within acceptable limits. As a verification case a simple truss structure was built and tested and then simulated using the FEA constitutive model. The results where found to be close the experimental data. ^