Nonlinear dynamics and chaos simulation system analysis for improved design

Small errors proved catastrophic. Our purpose to remark that a very small cause which escapes our notice determined a considerable effect that we cannot fail to see, and then we say that the effect is due to chance. Small differences in the initial conditions produce very great ones in the final phenomena. A small error in the former will produce an enormous error in the latter. When dealing with any kind of electrical device specification, it is important to note that there exists a pair of test conditions that define a test: the forcing function and the limit. Forcing functions define the external operating constraints placed upon the device tested. The actual test defines how well the device responds to these constraints. Forcing inputs to threshold for example, represents the most difficult testing because this put those inputs as close as possible to the actual switching critical points and guarantees that the device will meet the Input-Output specifications. ^ Prediction becomes impossible by classical analytical analysis bounded by Newton and Euclides. We have found that non linear dynamics characteristics is the natural state of being in all circuits and devices. Opportunities exist for effective error detection in a nonlinear dynamics and chaos environment. ^ Nowadays there are a set of linear limits established around every aspect of a digital or analog circuits out of which devices are consider bad after failing the test. Deterministic chaos circuit is a fact not a possibility as it has been revived by our Ph.D. research. In practice for linear standard informational methodologies, this chaotic data product is usually undesirable and we are educated to be interested in obtaining a more regular stream of output data. ^ This Ph.D. research explored the possibilities of taking the foundation of a very well known simulation and modeling methodology, introducing nonlinear dynamics and chaos precepts, to produce a new error detector instrument able to put together streams of data scattered in space and time. Therefore, mastering deterministic chaos and changing the bad reputation of chaotic data as a potential risk for practical system status determination. ^

Analysis of the lateral diffuse metal-oxide semiconductor (LDMOS) power amplifier for cellular base stations

The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is a new transistor model that includes self-heating affects and is capable of small-large signal simulations. It allows for most of the design considerations to be on stability, power gain, bandwidth, and DC requirements. The matching technique allows for the gain to be maximized at a specific target frequency. Calculations and simulations for the microwave power amplifier design were performed using Matlab and Microwave Office respectively. Microwave Office is the simulation software used in this thesis. The study demonstrated that Motorola's Electro Thermal LDMOS transistor in microwave power amplifier design process is a viable solution for common-source amplifier applications in high power base stations. The MET-LDMOS met the stability requirements for the specified frequency range without a stability-improvement model. The power gain of the amplifier circuit was improved through proper microwave matching design using input/output-matching techniques. The gain and efficiency of the amplifier improve approximately 4dB and 7.27% respectively. The gain value is roughly .89 dB higher than the maximum gain specified by the MRF21010 data sheet specifications. This work can lead to efficient modeling and development of high power LDMOS transistor implementations in commercial and industry applications.