Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz--3 Mhz and temperature range 77K--324K

Electronic noise has been investigated in AlxGa1−x N/GaN Modulation-Doped Field Effect Transistors (MODFETs) of submicron dimensions, grown for us by MBE (Molecular Beam Epitaxy) techniques at Virginia Commonwealth University by Dr. H. Morkoç and coworkers. Some 20 devices were grown on a GaN substrate, four of which have leads bonded to source (S), drain (D), and gate (G) pads, respectively. Conduction takes place in the quasi-2D layer of the junction (xy plane) which is perpendicular to the quantum well (z-direction) of average triangular width ∼3 nm. A non-doped intrinsic buffer layer of ∼5 nm separates the Si-doped donors in the AlxGa1−xN layer from the 2D-transistor plane, which affords a very high electron mobility, thus enabling high-speed devices. Since all contacts (S, D, and G) must reach through the AlxGa1−xN layer to connect internally to the 2D plane, parallel conduction through this layer is a feature of all modulation-doped devices. While the shunting effect may account for no more than a few percent of the current IDS, it is responsible for most excess noise, over and above thermal noise of the device. ^ The excess noise has been analyzed as a sum of Lorentzian spectra and 1/f noise. The Lorentzian noise has been ascribed to trapping of the carriers in the AlxGa1−xN layer. A detailed, multitrapping generation-recombination noise theory is presented, which shows that an exponential relationship exists for the time constants obtained from the spectral components as a function of 1/kT. The trap depths have been obtained from Arrhenius plots of log (τT2) vs. 1000/T. Comparison with previous noise results for GaAs devices shows that: (a) many more trapping levels are present in these nitride-based devices; (b) the traps are deeper (farther below the conduction band) than for GaAs. Furthermore, the magnitude of the noise is strongly dependent on the level of depletion of the AlxGa1−xN donor layer, which can be altered by a negative or positive gate bias VGS. ^ Altogether, these frontier nitride-based devices are promising for bluish light optoelectronic devices and lasers; however, the noise, though well understood, indicates that the purity of the constituent layers should be greatly improved for future technological applications. ^

A study of branching fluid networks for enhancing the performance of thermal -fluid devices

Compact thermal-fluid systems are found in many industries from aerospace to microelectronics where a combination of small size, light weight, and high surface area to volume ratio fluid networks are necessary. These devices are typically designed with fluid networks consisting of many small parallel channels that effectively pack a large amount of heat transfer surface area in a very small volume but do so at the cost of increased pumping power requirements. ^ To offset this cost the use of a branching fluid network for the distribution of coolant within a heat sink is investigated. The goal of the branch design technique is to minimize the entropy generation associated with the combination of viscous dissipation and convection heat transfer experienced by the coolant in the heat sink while maintaining compact high heat transfer surface area to volume ratios. ^ The derivation of Murray's Law, originally developed to predict the geometry of physiological transport systems, is extended to heat sink designs which minimze entropy generation. Two heat sink designs at different scales are built, and tested experimentally and analytically. The first uses this new derivation of Murray's Law. The second uses a combination of Murray's Law and Constructal Theory. The results of the experiments were used to verify the analytical and numerical models. These models were then used to compare the performance of the heat sink with other compact high performance heat sink designs. The results showed that the techniques used to design branching fluid networks significantly improves the performance of active heat sinks. The design experience gained was then used to develop a set of geometric relations which optimize the heat transfer to pumping power ratio of a single cooling channel element. Each element can be connected together using a set of derived geometric guidelines which govern branch diameters and angles. The methodology can be used to design branching fluid networks which can fit any geometry. ^

Control of mobile robotic platforms by handheld devices

The intent of this work was to develop a mobile robotic platform that was controlled by a Palm Pilot PDA. Advances in consumer electronics are producing powerful yet small handheld devices. Some of these devices present quasi-PC capabilities for a fraction of the cost; furthermore, they are compact enough that they fit in all but the smallest of platforms. The platform prototype built for testing purposes has a differential-drive configuration to provide simple but agile movement control. The sensor package consisted of two infrared ranging sensors mounted on servomotors that provide a wide area of detection. Building such a platform involved selection of hardware, circuit integration and software development. The software suite selected to develop code for the Palm Pilot was CodeWarrior, a C compiler that can generate code in Palm-native PRC files.