14 resultados para threshold field for electron emission

em Aston University Research Archive


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A detailed investigation has been undertaken into the field induced electron emission (FIEE) mechanism that occurs at microscopically localised `sites' on uncoated and dielectric coated metallic electrodes. These processes have been investigated using two dedicated experimental systems that were developed for this study. The first is a novel combined photo/field emission microscope, which employs a UV source to stimulate photo-electrons from the sample surface in order to generate a topographical image. This system utilises an electrostatic lens column to provide identical optical properties under the different operating conditions required for purely topographical and combined photo/field imaging. The system has been demonstrated to have a resolution approaching 1m. Emission images have been obtained from carbon emission sites using this system to reveal that emission may occur from the edge triple junction or from the bulk of the carbon particle. An existing UHV electron spectrometer has been extensively rebuilt to incorporate a computer control and data acquisition system, improved sample handling and manipulation and a specimen heating stage. Details are given of a comprehensive study into the effects of sample heating on the emission process under conditions of both bulk and transient heating. Similar studies were also performed under conditions of both zero and high applied field. These show that the properties of emission sites are strongly temperature and field dependent thus indicating that the emission process is `non-metallic' in nature. The results have been shown to be consistent with an existing hot electron emission model.

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A detailed investigation has been undertaken into a field-induced electron emission (FIEE) mechanism that occurs at microscopically localised `sites' on uncoated, dielectric-coated and composite-coated metallic cathodes. An optical imaging technique has been used to observe and characterize the spatial and temporal behaviour of the populations of emission sites on these cathodes under various experimental conditions, e.g. pulsed-fields, gas environment etc. This study has shown that, for applied fields of 20MVm^-1, thin dielectric (750AA) and composite metal-insulator (MI) overlayers result in a dramatic increase in the total number of emission sites (typically 30cm^-2), and hence emission current. The emission process has been further investigated by a complementary electron spectroscopy technique which has revealed that the localised emission sites on these cathodes display field-dependent spectral shifts and half-widths, i.e. indicative of a `non-metallic' emission mechanism. Details are also given of a comprehensive investigation into the effects of the residual gas environment on the FIEE process from uncoated Cu-cathodes. This latter study has revealed that the well-known Gas Conditioning process can be performed with a wide range of gas species (e.g. O_2, N_2 etc), and furthermore, the degree of conditioning is influenced by both a `Voltage' and `Temperature' effect. These experimental findings have been shown to be particularly important to the technology of high-voltage vacuum-insulation and cold-cathode electron sources. The FIEE mechanism has been interpreted in terms of a hot-electron process that is associated with `electroformed' conducting channels in MI, MIM and MIMI surface microstructures.

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This investigation looks critically at conventional magnetic lenses in the light of present-day technology with the aim of advancing electron microscopy in its broadest sense. By optimising the cooling arrangements and heat transfer characteristics of lens windings it was possible to increase substantially the current density in the winding, and achieve a large reduction in the size of conventional magnetic electron lenses. Following investigations into the properties of solenoidal lenses, a new type of lens with only one pole-piece was developed. The focal properties of such lenses, which differ considerably from those.of conventional lenses, have been derived from a combination of mathematical models and experimentally measured axial flux density distributions. These properties can be profitably discussed with reference to "half-lenses". Miniature conventional twin pole-piece lenses and the proposed radial field single pole-piece lenses have been designed and constructed and both types of lenses have been evaluated by constructing miniature electron optical columns. A miniature experimental transmission electron microscope (TEM), a miniature scanning electron microscope (SEM) and a scanning transmission microscope (STEM) have been built. A single pole-piece miniature one million volt projector lens of only lOcm diameter and weighing 2.lkg was designed, built and tested at 1 million volts in a commercial electron microscope. iii. Preliminary experiments indicate that in single pole lenses it is possible to extract secondary electrons from the specimen in spite of the presence of the magnetic field of the probe-forming lens. This may well be relevant for the SEM in which it is desirable to examine a large specimen at a moderately good resolution.

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It was decided to investigate field emission from cadmium sulphide because many workers have found that the agreement between theory and experiment for this material, and other semiconductors, is poor. An electron energy analyser, similar to those used in most of the previously reported experiments, was, therefore, built. The performance of the analyser was thoroughly investigated both theoretically and practically and the results of these investigations were used in conjunction with a tungsten emitter. Excellent agreement was obtained between the usually accepted total energy distribution for tungsten and the corresponding .distribution measured with the present analyser. A method of obtaining reliable cadmium sulphide emitter was developed. These emitters were then used in the analyser and it was found that the agreement between theory and experiment was poor. Previous explanations of the lack of agreement are considered and are found to be doubtful. The theory of field emission from semiconductors is reviewed and possible reasons for the discrepancy between theory and experiment are proposed. Finally, further experiments are described which should prove or disprove the conclusions arrived at in this work.

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In an attempt to clarify the behaviour of semi-conductor field emitters the properties of a narrow band gap material were investigated. A retarding potential analyser was built and tested using a tungsten emitter. The energy distribution of electrons emitted from single crystals of lead telluride (band gap 0.3 eV) and gallium phosphide (band gap 2.26 eV) were measured. The halfwidths of the distributions are discussed with respect to the relevant parameters for the materials. Methods of tip preparation had to be developed. The halfwidth of the energy distribution of electrons field emitted from carbon fibres was measured to be 0.21 ± 0.01 eV. A mechanism explaining the long lifetime of the emitters in poor vacuua is proposed.

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Background: Vigabatrin (VGB) is an anti-epileptic medication which has been linked to peripheral constriction of the visual field. Documenting the natural history associated with continued VGB exposure is important when making decisions about the risk and benefits associated with the treatment. Due to its speed the Swedish Interactive Threshold Algorithm (SITA) has become the algorithm of choice when carrying out Full Threshold automated static perimetry. SITA uses prior distributions of normal and glaucomatous visual field behaviour to estimate threshold sensitivity. As the abnormal model is based on glaucomatous behaviour this algorithm has not been validated for VGB recipients. We aim to assess the clinical utility of the SITA algorithm for accurately mapping VGB attributed field loss. Methods: The sample comprised one randomly selected eye of 16 patients diagnosed with epilepsy, exposed to VGB therapy. A clinical diagnosis of VGB attributed visual field loss was documented in 44% of the group. The mean age was 39.3 years∈±∈14.5 years and the mean deviation was -4.76 dB ±4.34 dB. Each patient was examined with the Full Threshold, SITA Standard and SITA Fast algorithm. Results: SITA Standard was on average approximately twice as fast (7.6 minutes) and SITA Fast approximately 3 times as fast (4.7 minutes) as examinations completed using the Full Threshold algorithm (15.8 minutes). In the clinical environment, the visual field outcome with both SITA algorithms was equivalent to visual field examination using the Full Threshold algorithm in terms of visual inspection of the grey scale plots, defect area and defect severity. Conclusions: Our research shows that both SITA algorithms are able to accurately map visual field loss attributed to VGB. As patients diagnosed with epilepsy are often vulnerable to fatigue, the time saving offered by SITA Fast means that this algorithm has a significant advantage for use with VGB recipients.