Study of epitaxial silicon layers with reference to the technology of semi-conductor devices

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Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100)

The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500K in an oxygen partial pressure of 5×10−5mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd3+, Feoh2+, and Feoh3+. The epitaxial relationship was found to be Fe3O4(100)⟨011⟩∕∕GaAs(100)⟨010⟩ with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0–6.0nm with the easy axes along the [011] direction of the GaAs(100) substrate.

Characterization of oxide layers grown on D9 austenitic stainless steel in lead bismuth eutectic

Lead bismuth eutectic (LBE) is a possible coolant for fast reactors and targets in spallation neutron sources. Its low melting point, high evaporation point, good thermal conductivity, low reactivity, and good neutron yield make it a safe and high performance coolant in radiation environments. The disadvantage is that it is a corrosive medium for most steels and container materials. This study was performed to evaluate the corrosion behavior of the austenitic stainless steel D9 in oxygen controlled LBE. In order to predict the corrosion behavior of steel in this environment detailed analyses have to be performed on the oxide layers formed on these materials and various other relevant materials upon exposure to LBE. In this study the corrosion/oxidation of D9 stainless steel in LBE was investigated in great detail. The oxide layers formed were characterized using atomic force microscopy, magnetic force microscopy, nanoindentation, and scanning electron microscopy with wavelength-dispersive spectroscopy (WDS) to understand the corrosion and oxidation mechanisms of D9 stainless steel in contact with the LBE. What was previously believed to be a simple double oxide layer was identified here to consist of at least 4 different oxide layers. It was found that the inner most oxide layer takes over the grain structure of what used to be the bulk steel material while the outer oxide layer consists of freshly grown oxides with a columnar structure. These results lead to a descriptive model of how these oxide layers grow on this steel under the harsh environments encountered in these applications.

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98 B0.02 /Si structures

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.